Abstract:Ultrafast, high‐sensitivity, visible‐blind ultraviolet (UV) photodetectors are crucial for practical applications, including: optical communication, environmental ozone hole monitoring, and combustion and chemical detection. However, commercial visible‐blind UV photodetectors based on traditional inorganic semiconductor materials involve expensive production processes, while the currently solution‐processed detectors still suffer from issues of low sensitivity or slow response speed. Herein, high‐performance visible‐blind UV photodetectors with simultaneously ultrafast response speed and high detectivity are achieved from solution‐processed micrometer‐thick methylammonium lead trichloride perovskite thin single crystals, grown in high quality with smooth surfaces by judiciously designing the substrate's wettability. The as‐fabricated UV photodetectors exhibit a low noise of 6.5 fA Hz−1/2, a low detection limit of 8.5 pW cm−2, and high specific detectivity of ≈6 × 1012 Jones. A fast response time of 15 ns and a large bandwidth of 25 MHz are obtained when decreasing the crystal thickness to 1 µm. The nanosecond response speed is several orders of magnitude faster than the best ever reported solution‐processed visible‐blind UV photodetectors and is comparable to reported UV photodetectors based on traditional (high‐temperature processed) inorganic semiconductors. The high performance combined with low‐cost fabrication makes these visible‐blind UV photodetectors highly attractive for applications in optical communication and ultrafast detection.

Au/WS2-QDs/Au MSM Junction for a Cost-Effective & Efficient Visible Blind UV-A Photodetection

Hydrothermally Synthesized WS2-QDs/Si (0-D/3-D) Vertical Heterojunction for an Efficient Wide Spectral (UV–Vis–NIR) Photodetection

Solution‐Processed Visible‐Blind Ultraviolet Photodetectors with Nanosecond Response Time and High Detectivity

High-Performance Self-Powered Transparent Metal–Semiconductor-Metal Ultraviolet Photodetector Based on Sub-10 Nm Thick Dual-Asymmetric Interdigitated Electrodes

High-Performance Low-Voltage Transparent Metal-Semiconductor-Metal Ultraviolet Photodetectors Based on Ultrathin Gold Asymmetric Interdigitated Electrodes

High-performance Solution-Processed Colloidal Quantum Dots-Based Tandem Broadband Photodetectors with Dielectric Interlayer

Low-temperature Processed High-Performance Visible–transparent Ga2O3 Solar Blind Ultraviolet Photodetectors with the Indium–tin–oxide Electrode

An MSM photodetector based on an InGaO/TiO2 heterojunction for high-performance UV detection

Lewis Acid-Doped Transition Metal Dichalcogenides for Ultraviolet-Visible Photodetectors

High-performance Shortwave Deep-Uv Response-Enhanced Photodetector Based on Nanoporous AlGaO/AlGaN with Efficient Light-Harvesting

Solution-processed solar-blind deep ultraviolet photodetectors based on strongly quantum confined ZnS quantum dots

All solution-processed SnO 2 /1D-CsAg 2 I 3 heterojunction for high-sensitivity self-powered visible-blind UV photodetector

Solar-blind UV photodetector with low-dark current and high-gain based on ZnO/Au/Ga2O3 sandwich structure

Highly DUV to NIR-II responsive broadband quantum dots heterojunction photodetectors by integrating quantum cutting luminescent concentrators

Achieving High-Performance Self-Powered Visible-Blind Ultraviolet Photodetection Using Alloy Engineering

Ultrafast Self-Powered Solar-Blind Ultraviolet Photodetector Based on Ga2O3 Microwire/GaN p-n Heterojunction Using a Single-Layer Graphene as Electrode

High-Performance Β-Ga2o3-based Solar-Blind Photodetector with Ultralow Dark Current and Fast Photoresponse for Deep-Ultraviolet Communication

Self-powered Pt/a-Ga2O3/ITO vertical Schottky junction solar-blind photodetector with excellent detection performance

Self-Powered Photoelectrochemical (Al,Ga)N Photodetector with an Ultrahigh Ultraviolet/Visible Reject Ratio and a Quasi-Invisible Functionality for 360° Omnidirectional Detection

Low-voltage IGZO field-effect ultraviolet photodiode

An Ultrahigh Responsivity Self-Powered Solar-Blind Photodetector Based on a Centimeter-Sized Β-Ga2o3/polyaniline Heterojunction.