Abstract:Sulfurized colloidal quantum dots based on the solution doping process enable the fabrication of heavy p‐type materials, which then form a multidimensional heterojunction with multi‐layer tungsten disulfide. This p‐n heterojunction comprising two different materials enables the absorption of broadband photons across the visible‐to‐infrared region and efficiently transports photogenerated carriers, demonstrating a high‐performance self‐powered broadband photodetector. Emerging semiconducting materials show considerable promise for application in the development of next‐generation optoelectronic devices. In particular, broadband light detection is crucial in various applications, including multispectral imaging and cognition. Therefore, tuning the physical properties of semiconductors and thereby building an efficient heterojunction are important for achieving a high‐performance photodetection device. In this study, a heavy p‐type colloidal quantum dot (CQD) is synthesized through solution‐based sulfurization. The resulting cubic‐shaped CQD exhibits broadband and strong absorption, which enable its broadband absorption. Further, a multidimensional 0D‐2D heterojunction is developed using p‐type CQD and n‐type tungsten disulfide (WS2). This efficient p‐n junction is operated as a fully self‐powered optical sensor and phototransistor under various light illumination conditions. Under the self‐powered condition, the CQD/WS2 heterojunction device exhibits 440‐ and 200‐fold‐higher responsivity and detectivity, respectively, than pristine WS2.

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