Abstract:The exponentially improving performance of digital computers has recently slowed due to the speed and power consumption issues resulting from the von Neumann bottleneck. In contrast, neuromorphic computing aims to circumvent these limitations by spatially co-locating logic and memory. Beyond reducing power consumption, neuromorphic devices provide efficient architectures for image recognition, machine learning, and artificial intelligence [1]. This talk will explore how two-dimensional (2D) nanoelectronic materials enable gate-tunable neuromorphic devices [2]. For example, by utilizing self-aligned, atomically thin heterojunctions, dual-gated Gaussian transistors have been realized, which show tunable anti-ambipolarity for artificial neurons, competitive learning, spiking circuits, and mixed-kernel support vector machines [3]. In addition, field-driven defect motion in polycrystalline monolayer MoS 2 enables gate-tunable memristive phenomena that serve as the basis of hybrid memristor/transistor devices (i.e., 'memtransistors' [4]) that concurrently provide logic and data storage functions [5]. The planar geometry of memtransistors further allows multiple contacts and dual gating that mimic the behavior of biological systems such as heterosynaptic responses [6]. Moreover, control over polycrystalline grain structure enhances the tunability of potentiation and depression, which enables unsupervised continuous learning in spiking neural networks [7]. Overall, this work introduces foundational circuit elements for neuromorphic computing by utilizing the unique quantum characteristics of 2D nanoelectronic materials [8]. [1] V. K. Sangwan, et al. , Nature Nanotechnology, 15 , 517 (2020). [2] M. E. Beck, et al. , ACS Nano , 14 , 6498 (2020). [3] M. E. Beck, et al. , Nature Communications , 11 , 1565 (2020). [4] V. K. Sangwan, et al. , Nature , 554 , 500 (2018). [5] X. Yan, et al. , Advanced Materials , 34 , 2108025 (2022). [6] H.-S. Lee, et al. , Advanced Functional Materials , 30 , 2003683 (2020). [7] J. Yuan, et al. , Nano Letters , 21 , 6432 (2021). [8] X. Liu, et al. , Nature Reviews Materials , 4 , 669 (2019).

First-Principles Prediction of Potential Candidate Materials ( = ) for Neuromorphic Computing

First-principles Prediction of Potential Candidate Materials MCu$_3$X$_4$ (M = V, Nb, Ta; X = S, Se, Te) for Neuromorphic Computing

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Energy-Efficient, Stable and Temperature-Tolerant Neuromorphic Device Based on Single Crystals of Halide Perovskites

Single-crystal ferroelectric LiNbO3 thin film-based synaptic devices enabled with tunable domain wall current for neuromorphic computing

(Invited) Two-Dimensional Neuromorphic Computing Materials and Devices

Flexible electronic synapse enabled by ferroelectric field effect transistor for robust neuromorphic computing

Analog ferroelectric domain-wall memories and synaptic devices integrated with Si substrates

Realization of memristor and synaptic simulation behaviors based on LiNbO x

Ultralow-Power Synaptic Transistor Based on Wafer-Scale MoS 2 Thin Film for Neuromorphic Application

Atomic Nb-doping of WS2 for high-performance synaptic transistors in neuromorphic computing

CMOS Back-End Compatible Memristors for in Situ Digital and Neuromorphic Computing Applications.

Research Progress on the Application of Topological Phase Transition Materials in the Field of Memristor and Neuromorphic Computing

Ferroelectric Memristors Based Hardware of Brain Functions for Future Artificial Intelligence

Materials challenges and opportunities for brain-inspired computing

Reconfigurable Ag/HfO2/NiO/Pt Memristors with Stable Synchronous Synaptic and Neuronal Functions for Renewable Homogeneous Neuromorphic Computing System

2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware

Ferroelectric materials for neuroinspired computing applications

CMOS Compatible Bio-Realistic Implementation with Ag/HfO2-Based Synaptic Nanoelectronics for Artificial Neuromorphic System

Ferroelectric Aluminum Scandium Nitride Transistors with Intrinsic Switching Characteristics and Artificial Synaptic Functions for Neuromorphic Computing

Enhanced resistance switching in ultrathin Ag/SrTiO 3 /(La,Sr)MnO 3 memristors and their long-term plasticity for neuromorphic computing