Abstract:Engineering the electromagnetic environment of a nanometre-scale light emitter by use of a photonic cavity can significantly enhance its spontaneous emission rate, through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing a low-threshold laser system with small footprint, low power consumption and ultrafast modulation. An ultralow-threshold nanoscale laser has been successfully developed by embedding quantum dots into a photonic crystal cavity (PCC). However, several challenges impede the practical application of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here we report a new lasing strategy: an atomically thin crystalline semiconductor--that is, a tungsten diselenide monolayer--is non-destructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PCC. A continuous-wave nanolaser operating in the visible regime is thereby achieved with an optical pumping threshold as low as 27 nanowatts at 130 kelvin, similar to the value achieved in quantum-dot PCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within one nanometre of the PCC surface. The surface-gain geometry gives unprecedented accessibility and hence the ability to tailor gain properties via external controls such as electrostatic gating and current injection, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.

Ultrafast Cascade Charge Transfer in Multibandgap Colloidal Quantum Dot Solids Enables Threshold Reduction for Optical Gain and Stimulated Emission

Ultrafast cascade charge transfer in multi bandgap colloidal quantum dot solids enables threshold reduction for optical gain and stimulated emission

Ultra-Low Threshold Lasing In A Quantum Dot Microdisk Cavity

Low‐Threshold, Highly Stable Colloidal Quantum Dot Short‐Wave Infrared Laser enabled by Suppression of Trap‐Assisted Auger Recombination

Colloidal quantum dot infrared lasers featuring sub-single-exciton threshold and very high gain

Low-threshold stimulated emission using colloidal quantum wells

Sub-single exciton optical gain threshold in colloidal semiconductor quantum wells with gradient alloy shelling

Single-Exciton Gain and Stimulated Emission across the Infrared Telecom Band from Robust Heavily-doped PbS Colloidal Quantum Dots

Single-Exciton Gain and Stimulated Emission Across the Infrared Optical Telecom Band from Robust Heavily-doped PbS Colloidal Quantum Dots

Quantum-Tuned Cascade Multijunction Infrared Photodetector

Ultra‐Thin Infrared Optical Gain Medium and Optically‐Pumped Stimulated Emission in PbS Colloidal Quantum Dot LEDs

Nuclear $β$- and $γ$- Collective Bands in the SU$_q$(2) Rotator Model

High-performance all-solution-processed quantum dot near-infrared-to-visible upconversion devices for harvesting photogenerated electrons

Phonon-assisted Auger enables ultrafast charge transfer in CdSe Quantum Dot/Organic Molecule

Monolayer semiconductor nanocavity lasers with ultralow thresholds

Ultra-Low Threshold Monolayer Semiconductor Nanocavity Lasers

Ultrafast Electro‐Absorption Switching in Colloidal CdSe/CdS Core/Shell Quantum Dots Driven by Intense THz Pulses

Ultrahigh Green and Red Optical Gain Cross-sections from Solutions of Colloidal Quantum Well Heterostructures

Broadband Tunable Optical Gain from Ecofriendly Semiconductor Quantum Dots with Near-Half-Exciton Threshold

Ultra-low threshold, electrically pumped quantum dot photonic crystal nanocavity laser

Highly Efficient, Bright and Stable Colloidal Quantum Dot Short-Wave Infrared Light Emitting Diodes