Abstract:Achieving low-threshold infrared stimulated emission in solution-processed quantum dots is critical to enable real-life application including photonic integrated circuits (PICs), LIDAR application and optical telecommunication. However, realization of low threshold infrared gain is fundamentally challenging due to high degeneracy of the first emissive state (e.g., 8-fold) and fast Auger recombination. In this letter, we demonstrate ultralow-threshold infrared stimulated emission with an onset of 110 <a class="link-external link-http" href="http://uJ.cm" rel="external noopener nofollow">this http URL</a>-2 employing cascade charge transfer (CT) in Pb-chalcogenide colloidal quantum dot (CQD) solids. In doing so, we investigate this idea in two different architectures including a mixture of multiband gap CQDs and layer-by-layer (LBL) configuration. Using transient absorption spectroscopy, we show ultrafast cascade CT from large band-gap PbS CQD to small band-gap PbS/PbSSe core/shell CQDs in LBL (~ 2 ps) and mixture (~ 9 ps) configuration. These results indicate the feasibility of using cascade CT as an efficient method to reduce optical gain threshold in CQD solid films.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to reduce the thresholds of infrared amplified spontaneous emission (ASE) and stimulated emission based on colloidal quantum dots (CQDs). Specifically, the paper explores reducing the thresholds of optical gain and stimulated emission by achieving ultrafast cascade charge transfer (CT) in multi - bandgap colloidal quantum dot solids. The paper mentions that achieving low - threshold infrared stimulated emission is crucial for practical applications such as photonic integrated circuits (PICs), light detection and ranging (LIDAR) applications, and optical communications. However, achieving this goal is inherently challenging due to the high degeneracy of the first emission state (for example, 8 - fold degeneracy) and rapid Auger recombination. To address these challenges, the authors propose a new method, that is, using the cascade charge transfer mechanism. By transferring high - energy carriers from donors (PbS quantum dots with a larger bandgap) to acceptors (small - bandgap PbS/PbSSe core - shell quantum dots as the gain medium), the threshold of optical gain can be effectively reduced. This method can not only improve the carrier transport efficiency but also reduce the influence of non - radiative multi - carrier Auger processes, thereby significantly reducing the ASE threshold. The paper shows two different structural configurations: one is a hybrid structure, and the other is a layer - by - layer (LBL) structure. Through transient absorption spectroscopy, the authors observe that in the LBL structure, the ultrafast cascade charge transfer time from large - bandgap PbS quantum dots to small - bandgap PbS/PbSSe core - shell quantum dots is approximately 2 picoseconds, while in the hybrid structure it is approximately 9 picoseconds. These results indicate that using cascade charge transfer is an effective method that can significantly reduce the optical gain threshold in CQD solid films. Experimental results show that in the LBL structure, the ASE threshold is reduced by more than 2.5 times, reaching 110 μJ/cm², which is the lowest ASE threshold recorded so far in undoped infrared - emitting CQDs.

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