Abstract:Multifunctional LiNbO<sub>3</sub> material plays an important role in domain wall microelectronics and nonlinear optoelectronics. However, the material is hard and relatively inert, and hence is quite difficultly etched. A new oblique method to etch LiNbO<sub>3</sub> memory cells at the surface of X-cut bulk crystals was proposed in this study. The process includes mask fabrication, oblique etching, and wet corrosion cleaning. The etching angle highly approaches 83° to achieve better polarization retention than others with etching angles of 0° and 70°. Meantime, the measured domain switching hysteresis loops become more symmetrical along the voltage axis than others with the presence of a strong imprint field. The horizontal electric field simulation along the polar Z axis exhibits the enhanced nucleating fields of the domains located at two edges of each memory cell in contact to Pt electrodes under the same applied voltage. The depolarization field was better screened in the memory with a higher etching angle. The new oblique method can improve the performance of the ferroelectric domain wall memory significantly.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to improve the polarization retention ability in lithium niobate (LiNbO₃, LNO) single - crystal memory cells. Specifically, the paper proposes a new oblique - angle etching method to fabricate LNO memory cells. By increasing the etching angle (up to 83°), the polarization retention ability is improved and the coercive field (E_c) is reduced. This improvement is of great significance for the development of high - performance ferroelectric domain - wall memories, especially in terms of fast operation speed and low power consumption.
### Main problems and solutions
1. **Problem**: Due to its hardness and relative inertness, the LNO material is difficult to be effectively etched, resulting in memory cells with a smaller etching angle showing poor polarization retention ability and a high depolarization field (E_d) during use, which further affects the storage performance.
2. **Solutions**:
- **New oblique - angle etching method**: The paper proposes a new oblique - angle etching technique. By tilting the sample during the etching process, more ions bombard the sidewalls, thereby achieving a higher etching angle (83°).
- **Etching process**: The etching process includes mask fabrication, oblique - angle etching, and wet - etching cleaning. By optimizing these steps, high - angle etching is successfully achieved.
- **Electrical property verification**: The experimental results show that the LNO memory cells fabricated by the new oblique - angle etching method have improvements in both polarization retention ability and coercive field.
### Experimental methods
- **Mask fabrication**: Electroplated nickel is used as a hard mask to resist fluorine - based plasma etching and wet - etching cleaning.
- **Oblique - angle etching**: The reactive - ion etching system (RIE) is used for etching at different tilt angles, including the normal angle (0°), the negative tilt angle (- 15°), and the positive tilt angle (15°).
- **Wet - etching cleaning**: After etching, a mixed solution of NH₄OH, H₂O₂, and H₂O is used to remove the damaged layer and redeposits.
### Results and discussion
- **Influence of etching angle**: Through the comparison of scanning electron microscope (SEM) images, it is found that the oblique - angle etching method significantly increases the sidewall angle from 70° to 83°.
- **Electrical properties**: The I - V curves and PFM images show that as the etching angle increases, the coercive field (E_c) gradually decreases, and the polarization retention ability is significantly improved.
- **Electric field and potential distribution simulation**: The finite - element simulation results show that as the etching angle increases, the maximum nucleation field appears in the area near the film surface, which helps to reduce the coercive field and improve the polarization retention ability.
### Conclusion
By the proposed new oblique - angle etching method, LNO memory cells with a high sidewall angle (83°) are successfully fabricated, and the polarization retention ability is significantly improved and the coercive field is reduced. This technique is not only beneficial to the development of next - generation domain - wall nano - devices, but also has important value for the manufacturing of other electro - optic devices based on LNO materials.