Abstract:Highly conductive domain walls in insulating ferroelectric LiNbO3 (LNO) single-crystal thin films with atomic smoothness are attractive for use in high-density integration of the ferroelectric domain wall random access memory (DWRAM) because of their excellent reliability and high read currents. However, downscaling of the memory size to the nanoscale could cause poor polarization retention. Understanding the size-dependent electrical performance of a memory cell is therefore crucial. In this work, highly insulating X-cut LNO thin films were bonded to SiO2/Si wafers and lateral mesa-like cells were fabricated on the film surfaces, where contact occurred with two-sided electrodes along the polar z-axis. Under application of an in-plane electric field above a coercive field (Ec), the domain within each memory cell was switched to be antiparallel to the unswitched referencing domain at the bottom; this resulted in the formation of a conducting domain wall, which enables the nondestructive readout strategy of the DWRAM. The cell, which has a lateral length (l) above a critical size (l0) of 105 nm, is found to be a mixture of two phases across the cell area. The inner area of the cell suffers from poor polarization retention because Ec = 150 kV/cm, as demonstrated by in-plane piezoresponse force microscopy imaging. In comparison, the outer periphery domains, which have lengths of 70 nm (∼l0/2), show good retention but require a much higher Ec of 785 kV/cm. The relevant physics is discussed as phase reconstruction occurs after release of the in-plane compressive strain near the outer regions; the results show good agreement with those of one-dimensional thermodynamic calculations and phase-field simulations. The measured current–voltage curves demonstrated a sudden enhancement of the wall current across the cell when l < l0, thus implying higher readout wall currents and better retention for the DWRAM at higher storage densities.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c22969?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c22969</a>.Phase-field simulation (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c22969/suppl_file/am0c22969_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to maintain good polarization retention performance while reducing the size of memory cells in ferroelectric domain - wall random - access memory (DWRAM) at the nanoscale. Specifically, the research focuses on lithium niobate (LNO) single - crystal thin films, and explores the problem of the decline in polarization retention performance due to the size effect when the size of memory cells is reduced to the nanoscale. The research prepares LNO thin - film memory cells with different lateral lengths (\(l\)) and analyzes their electrical properties under the application of a planar electric field, especially the changes in polarization retention characteristics and domain - wall currents. The research shows that when the lateral length \(l\) of the memory cell is greater than a certain critical value \(l_0\) (about 105 nm), the internal area of the cell exhibits poor polarization retention performance, while the outer edge area maintains good polarization retention performance. Conversely, when \(l < l_0\), the entire area exhibits high polarization retention performance and a larger read - out wall current, which is crucial for improving the performance of high - density memories. These findings help to understand the influence of the size effect on the electrical properties of LNO memory cells and provide a theoretical basis and technical support for the development of high - performance nanoscale DWRAM.

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