Abstract:Ferroelectric LiNbO3 single crystals have piezoelectric, pyroelectric and electro-optic properties and are widely used in nonvolatile memories, sensors, and electro-optic modulators. The material is hard and relatively inert for dying etching using thick Cr/Ni mask layers which are incompatible with the CMOS manufacturing technologies. Moreover, the etching angles are generally below 80 degrees that could result in poor polarization retention and a large imprint effect. Here we developed an etching technique on the basis of the solid-state reaction and wet solution corrosion together that used CMOS-compatible SiO2 masks to fabricate large arrays of LiNbO3 nanodevices in high precision. The LiNbO3 nanopatterns at the regions beyond the SiO2 masks can react with the deposited Al metal below 500 degrees C in formation of amorphous layers in targeted thicknesses that vary with the annealing temperature and time at a reduced atmosphere. The amorphous layers can be dissolved in mixed solutions of H2O, NH4OH, and H2O2 at 85 degrees C, and the etching angles of memory cells in lateral sizes of 20-220 nm can approach 90 degrees after the passivation of the LiNbO3 surface layer. The transmission electron microscope study shows the oxygen deficiency at the surface. After the connection of the cell to two side electrodes, domain switching occurs under an applied horizontal electrode field along the polar Z-axis accompanying the formation of conducting domain walls against the peripheral unswitched domain at the substrate. The read current can highly reach the level of 2-20 mu A in high reliability. This etching technique promotes the large-scale fabrication of LiNbO3 nanodevices on the Si platform.

Ultralow electric-field poling of LiNbO3 single-crystal devices

Polarization State Dependence of Laser-Induced Domain Nucleation in Lithium Niobate Crystals Investigated by Digital Holography

Experimental Study of Electric-Field Poling in LiNbO_3 Crystal by Femtosecond Laser Carving

Experimental observation of electric-field poling in femtosecond laser carved LiNbO3 crystal

Nanometer-sized Etching of Lithium Niobate Domain Wall Devices

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Domain modulation in LiNbO 3 films using litho piezoresponse force microscopy

Advanced Etching Techniques of LiNbO3 Nanodevices

Improved polarization retention in LiNbO3 single-crystal memory cells with enhanced etching angles

In-situ domain structure characterization of Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals under alternating current electric field poling

Wafer-Scale Periodic Poling of Thin-Film Lithium Niobate

Periodic poling with a micrometer-range period in thin-film lithium niobate on insulator

Ferroelectric Domain Reversal Dynamics in LiNbO3 Optical Superlattice Investigated with a Real-Time Monitoring System

Engineering Domain Variants in 0.7Pb(Mg1/3Nb2/3)-0.3PbTiO3 Single Crystals Using High-Frequency AC Poling

Low Electrical Field Induced Oriented Growth of Ferroelectric LiNbO3thin Films and Multilayers

In-situ Poling of Lithium Niobate Films on Silicon Wafer by Applying a Low Electric Field During Pulsed Laser Deposition

Hybrid Dry and Wet Etching of LiNbO3 Domain-Wall Memory Devices with 90° Etching Angles and Excellent Electrical Properties.

Low-frequency Charge Trapping and Bistable Domain Switching in Mg-doped LiNbO3 Single Crystal Films

Polarization Retention Dependence of Imprint Time Within LiNbO3 Single-Crystal Domain Wall Devices

Mechanical strain modulation of domain wall currents across LiNbO3 nanosensors

Controlled domain wall directions within nanodevices integrated on the surface of LiNbO3 single crystals