Abstract:In the present work, the crystal structure, electronic and magnetic properties of VO 2 (A) in its low-temperature (298 K) phase [LT-VO 2 (A)] are extensively studied by employing first-principles electronic structure calculations. Structural distortion is observed due to the formation of square and parallelogram-shaped wells in the crystal in conjugation with zigzag distortion in the V-double chains (running in the c -direction). The system is found to be a nonmagnetic metal. The formation of V 4+ -V 4+ pairs in the c -direction and the sharing of the available single V-3d electrons by the V-d xy and V-d yz states in both spin channels are respectively, responsible for the nonmagnetic and metallic behaviour of LT-VO 2 (A). The system encounters a magnetic phase transition from the nonmagnetic to a ferrimagnetic state upon the application of the Hubbard-type Coulomb interaction of U=1 eV, preserving metallicity. The uneven distribution of electrons caused by 63 % spin polarization due to the influence of U is responsible for the observed ferrimagnetism. The system further encounters a metal-to-half-metal transition at U = 2 eV, exhibiting ferromagnetism. The sharing of the single V-3d electron by the V-d xy and V-d yz states in the majority spin channel is responsible for the half-metallic behaviour of LT-VO 2 (A). Eventually, the system encounters a metal-insulator transition (MIT) upon applying U=3 eV, preserving ferromagnetism. The V-d xy and V-d yz states split into occupied and unoccupied components due to the application of U=3 eV, which further results in full-range orbital ordering (OO). The OO driven by U is therefore responsible for the MIT in LT-VO 2 (A). The simultaneous effect of p-d hybridization between the O-2p and V-3d states and V-O antiferromagnetic coupling is responsible for the ferromagnetism in the half-metallic and insulating phases of LT-VO 2 (A).

Optical response of metallic and insulating VO2 calculated with the LDA approach

Full-potential LMTO Study on the Electronic Structure of Heavy-Fermion Compound LiV 2 O 4

Comprehensive Study of the Metal-Insulator Transition in Pulsed Laser Deposited Epitaxial VO2 Thin Films

Optical Forces on an Oscillating Dipole Near VO2 Phase Transition

Ab initio Electronic Structure Study for Heavy Fermion Spinel LiV2 O4

Intrinsic optical properties of vanadium dioxide near the insulator-metal transition.

Electrodynamics of the vanadium oxides VO2 and V2O3

Optical response and band structure of LiCoO2 including electron-hole interaction effects

Optical properties of VO$_2$ films at the phase transition: influence of substrate and electronic correlations

Metal-insulator Transition in VO2: a DFT+DMFT perspective

Exact Interband Transition Energies of VO 2 Films

Intrinsic Evolutions Of Optical Functions, Band Gap, And Higher-Energy Electronic Transitions In Vo2 Film Near The Metal-Insulator Transition Region

Infrared spectroscopy and nano-imaging of the insulator-to-metal transition in vanadium dioxide

On the Optical Properties of Thin‐Film Vanadium Dioxide from the Visible to the Far Infrared

Substrate Effect on Optical Properties of Insulator-Metal Transition in VO2 Thin Films

Variation of orbital symmetry of the localized 3d^1 electron of the V^{4+} ion upon the metal-insulator transition in VO_2

Predicted Rebound Effects of Insulator-Metal Transition Temperature in Tungsten Doped VO2 Via First-Principles Method

Correlation-driven orbital ordering in the metal-insulator transition of VO 2 (A) at low-temperature (298 K)

Ab-initio Investigation of Anisotropic Optical Properties of LaFeAsO

Manipulations from oxygen partial pressure on the higher energy electronic transition and dielectric function of VO2 films during a metal–insulator transition process

Revealing the Role of Oxygen Vacancies on the Phase Transition of VO2 Film from the Optical-Constant Measurements