Contact Effects in Polymer Field-Effect Transistors

Douglas Natelson,J. H. Worne,B. H. Hamadani,D. A. Corley,J. W. Ciszek,J. M. Tour

DOI: https://doi.org/10.1149/ma2007-02/23/1222

2007-09-28

ECS Meeting Abstracts

Abstract:Abstract not Available.

What problem does this paper attempt to address?

Fringing Field Effects on Electrical Resistivity of Semiconductor Nanowire-Metal Contacts

Jun Hu,Yang Liu,C. Z. Ning,Robert Dutton,Sung-Mo Kang

DOI: https://doi.org/10.1063/1.2889534

IF: 4

2008-01-01

Applied Physics Letters

Abstract:Metal contacts play an important role in nanowire devices and are expected to exhibit qualitatively different properties from those of planar contacts due to small contact cross sections. We numerically investigate certain unique properties of nanowire-metal contacts and demonstrate that contact resistivity increases as nanowire radius shrinks. This increase is more significant for nanowire-three-dimensional metal contacts than for nanowire-one-dimensional metal contacts. The underlying cause for this size effect is identified as the strong fringing field effects, which become more significant as temperature decreases. Our simulation provides a more complete understanding of the size effects on nanowire-metal contacts.
Extracting contact effects in organic field-effect transistors

B. H. Hamadani,D. Natelson,B.H. Hamadani

DOI: https://doi.org/10.48550/arXiv.cond-mat/0505081

2005-05-03

Other Condensed Matter

Abstract:Contact resistances between organic semiconductors and metal electrodes have been shown to play a dominant role in electronic charge injection properties of organic field-effect transistors. These effects are more prevalent in short channel length devices and therefore should not be ignored when examining intrinsic properties such as the mobility and its dependence on temperature or gate voltage. Here we outline a general procedure to extract contact current-voltage characteristics and the true channel mobility from the transport characteristics in bottom contact poly(3-hexylthiophene) field-effect transistors, for both Ohmic and nonlinear charge injection, over a broad range of temperatures and gate voltages. Distinguishing between contact and channel contributions in bottom contact OFETs is an important step toward improved understanding and modeling of these devices.
Temperature-dependent contact resistances in high-quality polymer field-effect transistors

B. H. Hamadani,D. Natelson

DOI: https://doi.org/10.1063/1.1639945

IF: 4

2004-01-19

Applied Physics Letters

Abstract:Contact resistances between organic semiconductors and metals can dominate the transport properties of electronic devices incorporating such materials. We report measurements of the parasitic contact resistance and the true channel resistance in bottom contact poly(3-hexylthiophene) field-effect transistors with channel lengths from 400 nm up to 40 μm, from room temperature down to 77 K. For fixed gate voltage, the ratio of contact to channel resistance decreases with decreasing temperature. We compare this result with a recent model for organic semiconductor-metal contacts. Mobilities corrected for this contact resistance can approach 1 cm2/V s at room temperature and high gate voltages.

physics, applied
Interfacial charge transfer in nanoscale polymer transistors

J. H. Worne,R. Giridharagopal,K. F. Kelly,D. Natelson

DOI: https://doi.org/10.1007/s12274-008-8037-0

2008-09-23

Abstract:Interfacial charge transfer plays an essential role in establishing the relative alignment of the metal Fermi level and the energy bands of organic semiconductors. While the details remain elusive in many systems, this charge transfer has been inferred in a number of photoemission experiments. We present electronic transport measurements in very short channel ($L < 100$ nm) transistors made from poly(3-hexylthiophene) (P3HT). As channel length is reduced, the evolution of the contact resistance and the zero-gate-voltage conductance are consistent with such charge transfer. Short channel conduction in devices with Pt contacts is greatly enhanced compared to analogous devices with Au contacts, consistent with charge transfer expectations. Alternating current scanning tunneling microscopy (ACSTM) provides further evidence that holes are transferred from Pt into P3HT, while much less charge transfer takes place at the Au/P3HT interface.

Materials Science,Mesoscale and Nanoscale Physics
Field Emission from Polymers

Musa Ismail,Amaratunga G. A. J.,Eccleston W.

DOI: https://doi.org/10.1557/proc-558-61

1999-01-01

Abstract:Carbon based materials are considered to be amongst the most promising field emitters for use in displays. Semiconducting polymer (regioregular poly3 octylthiophene) has been found by the authors to have the lowest threshold field reported to date for any carbon based material. The emission process is, we believe, associated with surface irregularities, voids, possibly resulting from solvent evaporation. Field intensification occurs, and as a consequence there is field emission from the top ridges of the voids. The current flowing through these regions is controlled by space charge in traps in the upper half of the energy gap. There is, in addition, current injected from the base of the voids and the two currents mix to give field emission with current IaV1.8 where V is the anode voltage. Measurements on capacitor samples using Aluminium, Gold and Calcium electrodes have been used to examine the conduction processes in the material and these are linked to results of field emission to further illuminate the mechanisms involved and provide a model for the emission process.
Ultra-low-threshold Field Emission from Conjugated Polymers

I. Musa,D. A. I. Munindrasdasa,G. A. J. Amaratunga,W. Eccleston

DOI: https://doi.org/10.1038/26444

IF: 64.8

1998-01-01

Nature

Abstract:There is a need for low cost, efficient field emission materials for use in flat panel displays. The discovery, by the authors, of high emission currents from 'spin-on' materials, consisting of conjugated polymers, is, therefore, of potential importance. Analysis based on the presence of space charge limited currents in the polymer films is described and comparison is made with measurement.
Electrostatic Modulation of the Lateral Carrier Density Profile in Field Effect Devices with Nonlinear Dielectrics

Eylon Persky,Hyeok Yoon,Yanwu Xie,Harold Y. Hwang,Jonathan Ruhman,Beena Kalisky

DOI: https://doi.org/10.1103/physrevb.107.195427

IF: 3.7

2023-01-01

Physical Review B

Abstract:The properties of two-dimensional (2D) electronic systems are often effectively controlled using electrostatic gating. The geometry of such field effect devices influences the effectiveness of the gate and the carrier density profile in the 2D device. Here, we analyze the gate-induced spatial variations in the lateral carrier density in patterned LaAlO3/SrTiO3 devices. We model the electrostatics of the 2D interface using the Thomas-Fermi approximation and compute the gate-induced charge distribution at the interface. We show that the electric field lines generated by the gate are focused at the edges of the device, causing an increased depletion near its edges. This effect is accentuated in LaAlO3/SrTiO3 due to the large, nonlinear dielectric constant of the substrate, and the large distance between the gate electrode and the interface. We experimentally demonstrate one consequence of this effect by directly imaging current distributions in gated heterostructures, finding that insulating regions nucleate at the edges of the device due to the gate. Our results suggest that device geometry and choice of dielectric materials control the charge distribution in 2D systems.
Controlling contact resistance in top-gate polythiophene-based field-effect transistors by molecular engineering

Yong-Young Noh,Xiaoyang Cheng,Marta Tello,Mi-Jung Lee,Henning Sirringhaus

DOI: https://doi.org/10.1088/0268-1242/26/3/034003

IF: 2.048

2011-02-14

Semiconductor Science and Technology

Abstract:We report on an effective control of source?drain contact resistance by insertion of a self-assembled monolayer at the metal/semiconductor interface in top-gate staggered polymer field-effect transistors fabricated with poly(2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT). The device performance can be dramatically improved by introducing a fluorinated alkyl-thiol, 1H, 1H, 2H, 2H-perflourodecanethiol (PFDT) on the gold source?drain contacts. The PFDT-induced interface dipole and hydrophobic surface enables both a favourable shift of work function lowering the hole injection barrier via dipole alignment and a large crystal growth of pBTTT film with a unique lamellar morphology near to the contact. The optimized device with PFDT-modified gold contact plus OTS-treated substrate exhibits a high field-effect mobility above 0.4 cm2 V?1 s?1 and low contact resistance of 0.45 M? at the gate voltage of ?60 V.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Matthew Waldrip,Oana D. Jurchescu,David J. Gundlach,Emily G. Bittle

DOI: https://doi.org/10.1002/adfm.201904576

IF: 19

2019-09-19

Advanced Functional Materials

Abstract:Organic semiconductors have sparked interest as flexible, solution processable, and chemically tunable electronic materials. Improvements in charge carrier mobility put organic semiconductors in a competitive position for incorporation in a variety of (opto‐)electronic applications. One example is the organic field‐effect transistor (OFET), which is the fundamental building block of many applications based on organic semiconductors. While the semiconductor performance improvements opened up the possibilities for applying organic materials as active components in fast switching electrical devices, the ability to make good electrical contact hinders further development of deployable electronics. Additionally, inefficient contacts represent serious bottlenecks in identifying new electronic materials by inhibiting access to their intrinsic properties or providing misleading information. Recent work focused on the relationships of contact resistance with device architecture, applied voltage, metal and dielectric interfaces, has led to a steady reduction in contact resistance in OFETs. While impressive progress was made, contact resistance is still above the limits necessary to drive devices at the speed required for many active electronic components. Here, the origins of contact resistance and recent improvement in organic transistors are presented, with emphasis on the electric field and geometric considerations of charge injection in OFETs.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Contact Resistance in Ambipolar Organic Field-Effect Transistors Measured by Confocal Photoluminescence Electro-Modulation Microscopy

Wouter W. A. Koopman,Marco Natali,Cristian Bettini,Manuela Melucci,Michele Muccini,Stefano Toffanin

DOI: https://doi.org/10.1021/acsami.8b05518

2018-09-19

Abstract:Although it is theoretically expected that all organic semiconductors support ambipolar charge transport, most organic transistors either transport holes or electrons effectively. Single-layer ambipolar organic field-effect transistors enable the investigation of different mechanisms in hole and electron transport in a single device since the device architecture provides a controllable planar pn-junction within the transistor channel. However, a direct comparison of the injection barriers and of the channel conductivities between electrons and holes within the same device cannot be measured by standard electrical characterization. This article introduces a novel approach for determining threshold gate voltages for the onset of the ambipolar regime from the position of the pn-junction observed by photoluminescence electro-modulation (PLEM) microscopy. Indeed, the threshold gate voltage in the ambipolar bias regime considers a vanishing channel length, thus correlating the contact resistance. PLEM microscopy is a valuable tool to directly compare the contact and channel resistances for both carrier types in the same device. The reported results demonstrate that designing the metal/organic-semiconductor interfaces by aligning the bulk metal Fermi levels to the highest occupied molecular orbital or lowest unoccupied molecular orbital levels of the organic semiconductors is a too simplistic approach for optimizing the charge-injection process in organic field-effect devices.

materials science, multidisciplinary,nanoscience & nanotechnology
Contact Injection into Polymer Light-Emitting Diodes

E.M. Conwell,M.W. Wu

DOI: https://doi.org/10.1063/1.118716

1997-02-12

Abstract:The variation of current I with voltage V for poly(phenylene vinylene) and other polymer light-emitting diodes has been attributed to carriers tunneling into broad conduction and valence bands. In actuality the electrons and holes tunnel into polaron levels and transport is by hopping among these levels. We show that for small injection the I-V characteristic is determined mainly by the image force, for large injection by space charge effects, but in both cases the strong variation of mobility with field due to disorder plays an important role.

Condensed Matter
Noncovalent semiconducting polymer monolayers for high-performance field-effect transistors

Mengmeng Li,Jiawei Wang,Wanzhen Xu,Ling Li,Wojciech Pisula,René A.J. Janssen,Ming Liu

DOI: https://doi.org/10.1016/j.progpolymsci.2021.101394

IF: 31.281

2021-06-01

Progress in Polymer Science

Abstract:In recent years, noncovalently assembled monolayers of conjugated, semiconducting polymers with thickness less than 5 nm have attracted increasing attention because of their determining role in charge carrier transport in field-effect transistors and their multifunctionality in other electronic devices. This article reviews recent advances in various promising and cutting-edge polymer monolayers for high-performance field-effect transistors with the main focuses on: (I) solution processing techniques for long-range ordering; (II) the importance of polymer aggregation in solution; (III) the effect of polymer packing orientation; (IV) engineering of the interface between the polymer monolayer with electrodes and dielectrics; (V) investigating the mechanism of charge carrier transport. By summarizing the field-effect mobilities of the different classes of conjugated semiconducting polymer monolayers, further understanding of correlation between monolayer structure and device property will be revealed. Furthermore, we also highlight the recent progress of other electronic applications of polymer monolayers such as integrated circuits, chemical sensors, and light-emitting diodes. Finally, we propose future research opportunities and remaining challenges in this exciting research field.

polymer science
Contact Length Scaling in Graphene Field-Effect Transistors

Haitao Xu,Sheng Wang,Zhiyong Zhang,Zhenxing Wang,Huilong Xu,Lian-Mao Peng

DOI: https://doi.org/10.1063/1.3691629

IF: 4

2012-01-01

Applied Physics Letters

Abstract:A study is performed on the contact length scaling in graphene field effect transistors. When the contact length (L-C) is below the transfer length (L-T), both transconductance and on-current increase rapidly with L-C due to the strengthened carrier injection. Over the transfer length, the transconductance keeps increasing prominently before coming to a saturation. A possible explanation is that larger contact length would induce deeper doping in graphene, and the nonlinear screening of metal-induced charge could modify the potential barrier, which subsequently adjusts the contact resistance and transconductance. In principle, the electron-hole asymmetry can be tuned via altering the contact lengths. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691629]
Touching Polymer Chains by Organic Field-Effect Transistors

Wei Shao,Huanli Dong,Zhigang Wang,Wenping Hu

DOI: https://doi.org/10.1038/srep06387

IF: 4.6

2014-01-01

Scientific Reports

Abstract:Organic field-effect transistors (OFETs) are used to directly “touch” the movement and dynamics of polymer chains and then determine T g . As a molecular-level probe, the conducting channel of OFETs exhibits several unique advantages: 1) it directly detects the motion and dynamics of polymer chain at T g ; 2) it allows the measurement of size effects in ultrathin polymer films (even down to 6 nm), which bridges the gap in understanding effects between surface and interface. This facile and reliable determination of T g of polymer films and the understanding of polymer chain dynamics guide a new prospect for OFETs besides their applications in organic electronics and casting new light on the fundamental understanding of the nature of polymer chain dynamics.
Schottky-Barrier-Dependent Electrical Characteristics in Conjugated Polymer Transistors with Various Contact Metals

Yang Xu,Fanming Huang,Wenwu Li

DOI: https://doi.org/10.3389/fmats.2020.00131

2020-01-01

Frontiers in Materials

Abstract:Despite the intensive study on the promotion of device performance, the device physics regarding the effects of Schottky barrier on the charge injection in conjugated polymer transistors still need more discussions. Here, the indacenodithiophene–co-benzothiadiazole (IDT-BT) organic field-effect transistors (OFETs) with four different contact metals (Pt, Au, Cu, and Cr) were fabricated to explore the effects. Different Schottky barriers were achieved with the contact electrode’s work function (WF) varying. The ION/IOFF ratio of IDT-BT OFETs increases from 103 to 106 as the WF increases from 4.6 to 5.65 eV. The hole mobility also increases from 0.01 (for Cr) to 2.79 cm2V–1s–1 (for Pt) when the WF approaches the highest occupied molecular orbital (HOMO) level of the conjugated polymer. Moreover, the threshold voltage and subthreshold swing of the devices both decrease with increasing the WF. These could be ascribed to the lowered Schottky barrier with WF, which promotes charge injection. The lowest Schottky barrier (0.123 eV) and contact resistance (1.06 × 104 Ω⋅cm) can be achieved in the devices with Pt contacts, owing to the highest work function.
Field-driven dynamics of nematic microcapillaries

Pouya Khayyatzadeh,Fred Fu,Nasser Mohieddin Abukhdeir

DOI: https://doi.org/10.1103/PhysRevE.92.062509

2015-11-17

Abstract:Polymer-dispersed liquid crystal (PDLC) composites have long been a focus of study for their unique electro-optical properties which have resulted in various applications such as switchable (transparent/translucent) windows. These composites are manufactured using desirable "bottom-up" techniques, such as phase separation of a liquid crystal/polymer mixture, which enable production of PDLC films at very large scales. LC domains within PDLCs are typically spheroidal, as opposed to rectangular for an LCD panel, and thus exhibit substantially different behaviour in the presence of an external field. The fundamental difference between spheroidal and rectangular nematic domains is that the former results in the presence of nanoscale orientational defects in LC order while the latter does not. Progress in the development and optimization of PDLC electro-optical properties has progressed at a relatively slow pace due to this increased complexity. In this work, continuum simulations are performed in order to capture the complex formation and electric field-driven switching dynamics of approximations of PDLC domains. Using a simplified elliptic cylinder (microcapillary) geometry as an approximation of spheroidal PDLC domains, the effects of geometry (aspect ratio), surface anchoring, and external field strength are studied through the use of the Landau--de Gennes model of the nematic LC phase.

Soft Condensed Matter
Lowering the Contact Barriers of 2D Organic F 16 CuPc Field‐Effect Transistors by Introducing Van der Waals Contacts

Hang Yan,Yang Li,Jing‐Kai Qin,Bo Xu,Ping‐An Hu,Liang Zhen,Cheng‐Yan Xu

DOI: https://doi.org/10.1002/smll.202007739

IF: 13.3

2021-03-19

Small

Abstract:2D organic crystals exhibit efficient charge transport and field‐effect characteristics, making them promising candidates for high‐performance nanoelectronics. However, the strong Fermi level pinning (FLP) effect and large Schottky barrier between organic semiconductors and metals largely limit device performance. Herein, by carrying out temperature‐dependent transport and Kelvin probe force microscopy measurements, it is demonstrated that the introducing of 2D metallic 1T‐TaSe2 with matched band‐alignment as electrodes for F16CuPc nanoflake filed‐effect transistors leads to enhanced field‐effect characteristics, especially lowered Schottky barrier height and contact resistance at the contact and highly efficient charge transport within the channel, which are attributed to the significantly suppressed FLP effect and appropriate band alignment at the nonbonding van der Waals (vdW) hetero‐interface. Moreover, by taking advantage of the improved contact behavior with 1T‐TaSe2 contact, the optoelectronic performance of F16CuPc nanoflake‐based phototransistor is drastically improved, with a maximum photoresponsivity of 387 A W−1 and detectivity of 3.7 × 1014 Jones at quite a low Vds of 1 V, which is more competitive than those of the reported organic photodetectors and phototransistors. The work provides an avenue to improve the electrical and optoelectronic properties of 2D organic devices by introducing 2D metals with appropriate work function for vdW contacts.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
A Novel Contact Engineering Method for Transistors Based on Two-Dimensional Materials

Yaochen Sheng,LuFang Zhang,Feng Li,Xinyu Chen,Zhijian Xie,Haiyan Nan,Zihan Xu,David Wei Zhang,Jianhao Chen,Yong Pu,Shaoqing Xiao,Wenzhong Bao

DOI: https://doi.org/10.1016/j.jmst.2020.05.079

2020-01-01

Journal of Material Science and Technology

Abstract:Contact engineering is of critical importance for two-dimensional (2D) transition metal dichalcogenide (TMD)-based devices. However, there are only a few solutions to overcome this obstacle because of the complexity of the TMD-contact interface. In this work, we propose a novel method using a soft plasma treatment followed by the seamless deposition of a metal electrode to reduce the contact resistance of MoS2 field effect transistors (FETs). The treated FETs exhibit three times higher mobility than the control FETs without plasma treatment. The soft plasma treatment can remove the facial sulfur atoms and expose the middle Mo atoms so that they come into direct contact with the metal electrode, thus greatly improving the contact behavior. First-principles calculation is also performed to support the experimental results. Our potentially scalable strategy can be extended to the whole family of TMD based FETs to provide a possible route of device processsing technology for 2D device application.
Non-equilibrium transport in polymer mixed ionic–electronic conductors at ultrahigh charge densities

Dionisius H. L. Tjhe,Xinglong Ren,Ian E. Jacobs,Gabriele D'Avino,Tarig B. E. Mustafa,Thomas G. Marsh,Lu Zhang,Yao Fu,Ahmed E. Mansour,Andreas Opitz,Yuxuan Huang,Wenjin Zhu,Ahmet Hamdi Unal,Sebastiaan Hoek,Vincent Lemaur,Claudio Quarti,Qiao He,Jin-Kyun Lee,Iain McCulloch,Martin Heeney,Norbert Koch,Clare P. Grey,David Beljonne,Simone Fratini,Henning Sirringhaus

DOI: https://doi.org/10.1038/s41563-024-01953-6

IF: 41.2

2024-07-26

Nature Materials

Abstract:Conducting polymers are mixed ionic–electronic conductors that are emerging candidates for neuromorphic computing, bioelectronics and thermoelectrics. However, fundamental aspects of their many-body correlated electron–ion transport physics remain poorly understood. Here we show that in p-type organic electrochemical transistors it is possible to remove all of the electrons from the valence band and even access deeper bands without degradation. By adding a second, field-effect gate electrode, additional electrons or holes can be injected at set doping states. Under conditions where the counterions are unable to equilibrate in response to field-induced changes in the electronic carrier density, we observe surprising, non-equilibrium transport signatures that provide unique insights into the interaction-driven formation of a frozen, soft Coulomb gap in the density of states. Our work identifies new strategies for substantially enhancing the transport properties of conducting polymers by exploiting non-equilibrium states in the coupled system of electronic charges and counterions.

materials science, multidisciplinary,physics, applied,chemistry, physical, condensed matter

Contact Effects in Polymer Field-Effect Transistors

Fringing Field Effects on Electrical Resistivity of Semiconductor Nanowire-Metal Contacts

Extracting contact effects in organic field-effect transistors

Temperature-dependent contact resistances in high-quality polymer field-effect transistors

Interfacial charge transfer in nanoscale polymer transistors

Field Emission from Polymers

Ultra-low-threshold Field Emission from Conjugated Polymers

Electrostatic Modulation of the Lateral Carrier Density Profile in Field Effect Devices with Nonlinear Dielectrics

Controlling contact resistance in top-gate polythiophene-based field-effect transistors by molecular engineering

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Contact Resistance in Ambipolar Organic Field-Effect Transistors Measured by Confocal Photoluminescence Electro-Modulation Microscopy

Contact Injection into Polymer Light-Emitting Diodes

Noncovalent semiconducting polymer monolayers for high-performance field-effect transistors

Contact Length Scaling in Graphene Field-Effect Transistors

Touching Polymer Chains by Organic Field-Effect Transistors

Schottky-Barrier-Dependent Electrical Characteristics in Conjugated Polymer Transistors with Various Contact Metals

Field-driven dynamics of nematic microcapillaries

Lowering the Contact Barriers of 2D Organic F 16 CuPc Field‐Effect Transistors by Introducing Van der Waals Contacts

A Novel Contact Engineering Method for Transistors Based on Two-Dimensional Materials

Non-equilibrium transport in polymer mixed ionic–electronic conductors at ultrahigh charge densities