Possible centers of broadband near-IR luminescence in bismuth-doped solids: $Bi^{+}$, Bi$_5^{3+}$, and Bi$_4^0$

V. O. Sokolov,V. G. Plotnichenko,E. M. Dianov,V.O.Sokolov,V.G.Plotnichenko,E.M.Dianov
DOI: https://doi.org/10.48550/arXiv.1106.1519
2011-06-08
Materials Science
Abstract:Subvalent bismuth centers (interstitial $Bi^{+}$ ion, Bi$_5^{3+}$ cluster ion, and Bi$_4^0$ cluster) are examined as possible centers of broadband near-IR luminescence in bismuth-doped solids on the grounds of quantum-chemical modeling and experimental data.
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