Structural anisotropy in Sb thin films

Pradip Adhikari,Anuradha Wijesinghe,Anjali Rathore,Timothy Jinsoo Yoo,Gyehyeon Kim,Sinchul Yeom,Hyoung-Taek Lee,Alessandro R. Mazza,Changhee Sohn,Hyeong-Ryeol Park,Mina Yoon,Matthew Brahlek,Honggyu Kim,Joon Sue Lee
DOI: https://doi.org/10.1063/5.0159670
IF: 6.6351
2024-01-01
APL Materials
Abstract:Sb thin films have attracted wide interest due to their tunable band structure, topological phases, high electron mobility, and thermoelectric properties. We successfully grow epitaxial Sb thin films on a closely lattice-matched GaSb(001) surface by molecular beam epitaxy. We find a novel anisotropic directional dependence on their structural, morphological, and electronic properties. The origin of the anisotropic features is elucidated using first-principles density functional theory (DFT) calculations. The growth regime of crystalline and amorphous Sb thin films was determined by mapping the surface reconstruction phase diagram of the GaSb(001) surface under Sb2 flux, with confirmation of structural characterizations. Crystalline Sb thin films show a rhombohedral crystal structure along the rhombohedral (211) surface orientation parallel to the cubic (001) surface orientation of the GaSb substrate. At this coherent interface, Sb atoms are aligned with the GaSb lattice along the [1̄10] crystallographic direction but are not aligned well along the [110] crystallographic direction, which results in anisotropic features in reflection of high-energy electron diffraction patterns, misfit dislocation formation, surface morphology, and transport properties. Our DFT calculations show that the preferential orientation of the rhombohedral Sb (211) plane may originate from the GaSb surface, where Sb atoms align with the Ga and Sb atoms on the reconstructed surface. The formation energy calculations confirm the stability of the experimentally observed structures. Our results provide optimal film growth conditions for further studies of novel properties of Bi1−xSbx thin films with similar lattice parameters and an identical crystal structure, as well as functional heterostructures of them with III–V semiconductor layers along the (001) surface orientation, supported by a theoretical understanding of the anisotropic film orientation.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to explore the structural anisotropy phenomenon that occurs when growing Sb thin films on cubic - lattice - matched GaSb(001) substrates. Specifically, the researchers successfully prepared Sb thin films coherently grown with GaSb(001) substrates by molecular beam epitaxy (MBE) technology, and found that these films exhibit significant directional dependence in terms of structure, morphology, and electronic properties. The origin of this anisotropic feature has been elucidated through first - principles density functional theory (DFT) calculations. The main contributions of the paper are as follows: 1. **Successful preparation of Sb thin films**: The researchers successfully prepared rhombic Sb(211) thin films with a hexagonal arrangement on GaSb(001) substrates. These films are mismatched with the GaSb substrate in the [110] direction, but well - matched in the [110̅] direction. 2. **Revealing the origin of anisotropy**: Through DFT calculations, the researchers found that the anisotropic features of Sb thin films originate from the reconstruction of the GaSb(001) surface. Sb atoms align with Ga and Sb atoms on the reconstructed surface, leading to lattice mismatch and dislocation formation in different directions. 3. **Optimization of growth conditions**: By systematically studying surface dynamics and crystal phases at different growth temperatures, the researchers determined the optimal growth conditions, thereby preparing high - quality Sb thin films. 4. **Exploration of electrical transport properties**: Experimental results show that the resistance of Sb thin films is lower in the [110̅] direction and higher in the [110] direction, which is consistent with the anisotropic structure of the films. 5. **Combination of theory and experiment**: By combining DFT calculations and experimental characterization, the researchers not only explained the anisotropic features of Sb thin films, but also verified the stability of these features. In summary, this paper systematically studied the growth mechanism and anisotropic characteristics of Sb thin films on GaSb(001) substrates through a combination of experimental and theoretical methods, providing an important reference for the future growth of Bi\(_{1 - x}\)Sb\(_x\) thin films and other functional heterostructures on similar substrates.