Abstract:Heterogeneous integration of β-Ga2O3 on highly thermal conductive SiC substrate by the ion-cutting technique is an effective solution to break the heat-dissipation bottleneck of β-Ga2O3 power electronics. In order to acquire high-quality β-Ga2O3 materials on SiC substrates, it is essential to understand the influence of the ion-cutting process on the current transport in β-Ga2O3 devices and to further optimize the electrical characteristics of the exfoliated β-Ga2O3 materials. In this work, the high quality of β-Ga2O3/SiC structure was constructed by the ion-cutting process, in which an amorphous layer of only 1.2 nm was formed between β-Ga2O3 and SiC. The current transport characteristics of Au/Pt/Ni/β-Ga2O3 Schottky barrier diodes (SBDs) on SiC were systematically investigated. β-Ga2O3 SBDs with a high rectification ratio of 108 were realized on a heterogeneous β-Ga2O3 on-SiC (GaOSiC) substrate. The net carrier concentration of the β-Ga2O3 thin film for GaOSiC substrate was down to about 8% leading to a significantly higher resistivity, compared to the β-Ga2O3 donor wafer, which is attributed to the increase in acceptor-type implantation defects during the ion-cutting process. Furthermore, temperature-dependent current–voltage characteristics suggested that the reverse leakage current was limited by the thermionic emission at a low electric field, while at a high electric field, it was dominated by the Poole–Frenkel emission from E3 deep donors caused by the implantation-induced GaO antisite defects. These results would advance the development of β-Ga2O3 power devices on high thermal conductivity substrate fabricated by ion-cutting technique.

Modeling of Schottky barrier diode characteristics on heteroepitaxial β-gallium oxide thin films

Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage

Thermal characterization of gallium oxide Schottky barrier diodes

Reverse Leakage Mechanism of Schottky Barrier Diode Fabricated on Homoepitaxial Gan

On the models used for TCAD simulations of Diamond Schottky Barrier Diodes

Growth and Characterization of Homoepitaxial $β$-Ga$_2$O$_3$ Layers

Characterization Of The Inhomogeneous Barrier Distribution In A Pt/(100) Beta-Ga2o3 Schottky Diode Via Its Temperature-Dependent Electrical Properties

Schottky Barrier Diode Based On Beta-Ga2o3 (100) Single Crystal Substrate And Its Temperature-Dependent Electrical Characteristics

Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes

Numerical simulations of the electrical transport characteristics of a Pt/n-GaN Schottky diode

Electrical Characterizations of Planar Ga2O3 Schottky Barrier Diodes

Establishment of Composite Leakage Model and Design of GaN Schottky Barrier Diode with Stepped Field Plate

A Current–Voltage Model for Double Schottky Barrier Devices

Analytical Modeling and Design of Gallium Oxide Schottky Barrier Diodes Beyond Unipolar Figure of Merit Using High-k Dielectric Superjunction Structures

Three-dimensional thermal analysis of heterogeneously integrated β -Ga2O3-on-SiC SBDs using Raman thermography and electrothermal modeling

Device topological thermal management of β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes*

Benchmarking Β‐ga2o3 Schottky Diodes by Nanoscale Ballistic Electron Emission Microscopy

The Fundamental Current Mechanisms in SiC Schottky Barrier Diodes: Physical Model, Experimental Verification and Implications

Investigation of Temperature Dependent Electrical Characteristics on Au/Ni/β-Ga 2 O 3 Schottky Diodes

Numerical simulation of tunneling current in GaN Schottky diodes

Current transport mechanism of lateral Schottky barrier diodes on β -Ga2O3/SiC structure with atomic level interface