Abstract:Today's electronics uses electron charge as a state variable for logic and computing operation, which is often represented as voltage or current. In this representation of state variable, carriers in electronic devices behave independently even to a few and single electron cases. As the scaling continues to reduce the physical feature size and to increase the functional throughput, two most outstanding limitations and major challenges, among others, are power dissipation and variability as identified by ITRS. This paper presents the expose, in that collective phenomena, e.g., spintronics using appropriate order parameters of magnetic moment as a state variable may be considered favorably for a new room-temperature information processing paradigm. A comparison between electronics and spintronics in terms of variability, quantum and thermal fluctuations will be presented. It shows that the benefits of the scalability to smaller sizes in the case of spintronics (nanomagnetics) include a much reduced variability problem as compared with today's electronics. In addition, another advantage of using nanomagnets is the possibility of constructing nonvolatile logics, which allow for immense power savings during system standby. However, most of devices with magnetic moment usually use current to drive the devices and consequently, power dissipation is a major issue. We will discuss approaches of using electric-field control of ferromagnetism in dilute magnetic semiconductor (DMS) and metallic ferromagnetic materials. With the DMSs, carrier-mediated transition from paramagnetic to ferromagnetic phases make possible to have devices work very much like field effect transistor, plus the non-volatility afforded by ferromagnetism. Then we will describe new possibilities of the use of electric field for metallic materials and devices: Spin wave devices with multiferroics materials. We will also further describe a potential new method of electric field control of metallic ferromagnetism via field effect of the Thomas Fermi surface layer.

A room-temperature four-terminal spin field effect transistor

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

All-electric all-semiconductor spin field effect transistors

Spin tunnel field-effect transistors based on two-dimensional van der Waals heterostructures

Spin Transistor Built on 2D Van Der Waals Heterostructures

All-Electrical Spin Field Effect Transistor in van der Waals Heterostructures at Room Temperature

Room Temperature Planar Hall Transistor

Electric Field Control of Spin Transport

Heat Generation by Spin-Polarized Current in a Quantum-Dot Spin Battery

A Nonvolatile Magnon Field Effect Transistor at Room Temperature

Spin-Dependent Transport at 2D Solids: from Nonmagnetic Layers to Ferromagnetic Van Der Waals Structures.

Spin-sensitive charge oscillation in a single-molecule transistor

Room temperature energy-efficient spin-orbit torque switching in wafer-scale all-vdW heterostructure

Ultrathin Ferrite Nanosheets for Room-Temperature Two-Dimensional Magnetic Semiconductors.

From Nanoelectronics to Nano-Spintronics.

Electric control of spin in monolayer WSe2 field effect transistors

Electric-Field-Controlled Antiferromagnetic Spintronic Devices

Generation and Control of Terahertz Spin Currents in Topology-Induced 2D Ferromagnetic Fe3 GeTe2 |Bi2 Te3 Heterostructures

Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe3GeTe2 induced by topological insulators

Fe3GaTe2/MoSe2 Ferromagnet/Semiconductor 2D van der Waals Heterojunction for Room-Temperature Spin-Valve Devices