Abstract:International Journal of High Speed Electronics and Systems, Ahead of Print. This research presents a comprehensive investigation and optimization of the Pt/AlN Schottky Barrier diode (SBD) using technology computer-aided design (TCAD) modeling. The study explores the electrical characteristics of AlN SBDs with various metal contacts, including Aluminum (Al), Silver (Ag), Tungsten (W), Gold (Au), Nickel (Ni), and Platinum (Pt). Through the comparative analyses of different metal/AlN Schottky contacts, the Pt/AlN structure emerges as the most promising due to its superior barrier height and lower leakage current. At [math]K, the diode demonstrates a barrier height of 2.72[math]V, a nearly ideal leakage current of 0.046[math]pA, and a breakdown voltage of 363[math]V. The research extends to examining the temperature-dependent electrical behavior of Pt/AlN Schottky diodes, particularly for high-power and high-temperature applications. Analysis carried out across temperatures ranging from [math]K to [math]K reveals a trend of increasing ON resistance and consistently lower leakage current with rising temperature. Importantly, the study indicates that the impact of temperature on the barrier height and breakdown voltage of the diode is negligible, thus rendering it suitable for high-temperature operation. Leveraging the unique properties of AlN as an ultra-wide bandgap material within the III-V compound semiconductor family, this research provides valuable insights into the potential applications of Pt/AlN Schottky contact. The study highlights that the Pt/AlN Schottky contact is effective not only for high-power, high-temperature SBDs but also as superior metal/semiconductor gate contacts for field-effect transistors (FETs). Their suitability is attributed to their ability to handle high voltages, minimize reverse leakage current, and demonstrate improved thermal stability.

Performance of PT/CRSE Schottky diodes designed for 5G/6G technology applications

Schottky-Diode Design for Future High-Speed Telecommunications

Enhanced Optical and Electrical Interactions at the Pt/MgSe Interfaces Designed for 6G Communication Technology

Schottky-diode design for the world's leading telecommunication

Carbon nanotube Schottky diodes using Ti-Schottky and Pt-Ohmic contacts for high frequency applications

The Dependence of Electrical Characterization on Interface Structure of PtSi / strained-Si 1 − x Ge x / Si Schottky Diodes

Off - State Performances of Ideal Schottky Barrier Diodes (SBD) on Diamond and Silicon Carbide

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Optimizing TCAD Model and Temperature-Dependent Analysis of Pt/AlN Schottky Barrier Diodes for High-Power and High-Temperature Applications

Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage

Interface Structure and Electrical Properties of PtSi/Si 1− X Ge X Diodes Based on Silicon

Growth of Polycrystalline n- CrSe2 Nanosheets Onto p –Si Substrates and their Applications as Rectifiers and Gigahertz Band Filters

Effect of amorphous SiC layer on electrical and optical properties of Al/a-SiC/c-Si Schottky diode for optoelectronic applications

SiC devices: physics and numerical simulation

Development and Modelling of Gallium Nitride Based Lateral Schottky Barrier Diodes with Anode Recesses for mmWave and THz Applications

Analysis of trench termination in 4H-nSiC based power devices

Thin-film photodiode based on novel SiC/MoS 2 composite by RF-sputtering for fast response photodetection

2.7-Kv Algan/Gan Schottky Barrier Diode On Silicon Substrate With Recessed-Anode Structure

Analytical assessment of Schottky diodes based on CdS/Si heterostructure: current, capacitance, and conductance analysis using TCAD

High Performance Indium-Tin-Oxide Schottky Diodes for Terahertz Band Operation

Temperature dependent electrical studies on Cu/AlGaN/GaN Schottky barrier diodes with its microstructural characterization