Abstract:Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step toward impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS2) grown by chemical vapor deposition using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (CrW) and molybdenum (MoW) at a tungsten site, oxygen at sulfur sites in both top and bottom layers (OS top/bottom), and two negatively charged defects (CD type I and CD type II). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. CrW forms three deep unoccupied defect states, two of which arise from spin-orbit splitting. The formation of such localized trap states for CrW differs from the MoW case and can be explained by their different d shell energetics and local strain, which we directly measured. Utilizing a tight-binding model the electronic spectra of the isolectronic substitutions OS and CrW are mimicked in the limit of a zero hopping term and infinite on-site energy at a S and W site, respectively. The abundant CDs are negatively charged, which leads to a significant band bending around the defect and a local increase of the contact potential difference. In addition, CD-rich domains larger than 100 nm are observed, causing a work function increase of 1.1 V. While most defects are electronically isolated, we also observed hybrid states formed between CrW dimers. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS2 as reported here will guide future efforts of targeted defect engineering and doping of TMDs.

Super-defects in superatomic crystals

Atomistic Exploration of Deformation Properties of Copper Nanowires with Pre-Existing Defects

Atomic Defects in Two‐Dimensional Materials: from Single‐Atom Spectroscopy to Functionalities in Opto‐/Electronics, Nanomagnetism, and Catalysis

Investigation of the Impact of Defects on Internal Stress Generation in DO3 Crystals

How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin-Orbit Splitting, and Strain.

Crystal Structure Design and Synthesis of Noncentrosymmetric Superconductors in Intercalation-Induced Transition Metal Dichalcogenides.

Superatomic-Charge-Density-Wave in Cluster-Assembled Au6Te12Se8 Superconductors.

Atomic scale understanding of the defects process in concurrent recrystallization and precipitation of Sm-Co-Fe-Cu-Zr alloys

The Atomic Circus: Small Electron Beams Spotlight Advanced Materials Down to the Atomic Scale

Influence of nano-hole defects and their geometric arrangements on the superfluid density in atomically thin single crystals of indium superconductor

In Situ Structural Dynamics of Atomic Defects in Tungsten Oxide

Defect Engineering of Two-Dimensional Transition-Metal Dichalcogenides: Applications, Challenges, and Opportunities

Interweaving Polar Charge Orders in a Layered Metallic Super-atomic Crystal

When a defect is a pathway to improve stability: a case study of the L12 Co3TM superlattice intrinsic stacking fault

When a defect is a pathway to improve stability: a case study of the L1 2 Co 3 TM superlattice intrinsic stacking fault

When a defect is a pathway to improve stability: a case study of the L1<Subscript>2</Subscript> Co<Subscript>3</Subscript>TM superlattice intrinsic stacking fault

Numerical Study of the Defect Adamantine Compound CuGaGeSe4

Revealing Grain Boundaries and Defect Formation in Nanocrystal Superlattices by Nanodiffraction

Imperfections are not 0 K: free energy of point defects in crystals

When A Defect Is A Pathway To Improve Stability: A Case Study Of The L1(2) Co3tm Superlattice Intrinsic Stacking Fault

Interweaving Polar Charge Orders in a Layered Metallic Superatomic Crystal