Observation of a spontaneous anomalous Hall response in the Mn 5 Si 3 d-wave altermagnet candidate

Helena Reichlova,Rafael Lopes Seeger,Rafael González-Hernández,Ismaila Kounta,Richard Schlitz,Dominik Kriegner,Philipp Ritzinger,Michaela Lammel,Miina Leiviskä,Anna Birk Hellenes,Kamil Olejník,Vaclav Petřiček,Petr Doležal,Lukas Horak,Eva Schmoranzerova,Antonín Badura,Sylvain Bertaina,Andy Thomas,Vincent Baltz,Lisa Michez,Jairo Sinova,Sebastian T. B. Goennenwein,Tomáš Jungwirth,Libor Šmejkal

DOI: https://doi.org/10.1038/s41467-024-48493-w

IF: 16.6

2024-06-11

Nature Communications

Abstract:Phases with spontaneous time-reversal ( ) symmetry breaking are sought after for their anomalous physical properties, low-dissipation electronic and spin responses, and information-technology applications. Recently predicted altermagnetic phase features an unconventional and attractive combination of a strong -symmetry breaking in the electronic structure and a zero or only weak-relativistic magnetization. In this work, we experimentally observe the anomalous Hall effect, a prominent representative of the -symmetry breaking responses, in the absence of an external magnetic field in epitaxial thin-film Mn 5 Si 3 with a vanishingly small net magnetic moment. By symmetry analysis and first-principles calculations we demonstrate that the unconventional d-wave altermagnetic phase is consistent with the experimental structural and magnetic characterization of the Mn 5 Si 3 epilayers, and that the theoretical anomalous Hall conductivity generated by the phase is sizable, in agreement with experiment. An analogy with unconventional d-wave superconductivity suggests that our identification of a candidate of unconventional d-wave altermagnetism points towards a new chapter of research and applications of magnetic phases.

multidisciplinary sciences

What problem does this paper attempt to address?

This paper mainly discusses the spontaneous anomalous Hall effect (AHE) exhibited by a material called Mn5Si3 in the absence of an external magnetic field. AHE is a non-dissipative electrical conductivity phenomenon that occurs due to the spontaneous breaking of time-reversal symmetry (T-symmetry) and is typically associated with the net magnetization in magnetic materials. However, researchers observed a significant AHE in Mn5Si3 thin films despite their net magnetic moment being close to zero.

The paper suggests that this phenomenon may be related to a new type of magnetic phase called d-wave altermagnetism, which exhibits strong T-symmetry breaking but weak or zero magnetization. This phase is characterized by alternating spin polarization in both real and momentum space, independent of the conventional net magnetization. The d-wave altermagnetism in magnetic materials is caused by crystal structure rather than strong correlation effects, similar to the d-wave pairing state in superconductors.

Experimental results show that Mn5Si3 thin films have a hexagonal crystal structure without geometric frustration, ruling out the possibility of it belonging to a magnetic phase caused by geometric frustration. Instead, the researchers focus on the second type of crystal structure, namely the d-wave altermagnetism. Through first-principles calculations and structural analysis, they demonstrate that the magnetic atoms in Mn5Si3 exhibit d-wave magnetism, which shows an asymmetrical distribution in both real and momentum space, accompanied by nearly zero net magnetization and observable spontaneous AHE.

The paper also discusses the temperature-dependent properties of Mn5Si3 thin films, such as resistivity, magnetoresistance, and magnetization. These measurements are consistent with the theoretical prediction of d-wave altermagnetism. In particular, a second phase transition related to AHE is observed at around 240K, corresponding to the formation of the d-wave altermagnetic phase. Furthermore, the researchers highlight that although their findings differ from known ferromagnetic, antiferromagnetic, and paramagnetic phases, this may open up new areas of research and applications in magnetic topology, non-dissipative electronics, valleytronics, or spintronics.