Observation of the anomalous Nernst effect in altermagnetic candidate Mn5Si3

Antonin Badura,Warlley H. Campos,Venkata K. Bharadwaj,Ismaïla Kounta,Lisa Michez,Matthieu Petit,Javier Rial,Miina Leiviskä,Vincent Baltz,Filip Krizek,Dominik Kriegner,Jan Zemen,Sjoerd Telkamp,Sebastian Sailler,Michaela Lammel,Rodrigo Jaeschke Ubiergo,Anna Birk Hellenes,Rafael González-Hernández,Jairo Sinova,Tomáš Jungwirth,Sebastian T. B. Goennenwein,Libor Šmejkal,Helena Reichlova

2024-03-20

Abstract:The anomalous Nernst effect generates transverse voltage to the applied thermal gradient in magnetically ordered systems. The effect was previously considered excluded in compensated magnetic materials with collinear ordering. However, in the recently identified class of compensated magnetic materials, dubbed altermagnets, time-reversal symmetry breaking in the electronic band structure makes the presence of the anomalous Nernst effect possible despite the collinear spin arrangement. In this work, we investigate epitaxial Mn5Si3 thin films known to be an altermagnetic candidate. We show that the material manifests a sizable anomalous Nernst coefficient despite the small net magnetization of the films. The measured magnitudes of the anomalous Nernst coefficient reach a scale of microVolts per Kelvin. We support our magneto-thermoelectric measurements by density-functional theory calculations of the material's spin-split electronic structure, which allows for the finite Berry curvature in the reciprocal space. Furthermore, we present our calculations of the intrinsic Berry-curvature Nernst conductivity, which agree with our experimental observations.

Materials Science,Mesoscale and Nanoscale Physics