Comprehensive characterization and optoelectronic significance of Ho 3+ and Cr 3+ Co-doped ZnAl 2 O 4 spinels

I Elhamdi,H Souissi,S Kammoun,E Dhahri,J Pina,B F O Costa,E López-Lago,I. Elhamdi,H. Souissi,S. Kammoun,E. Dhahri,J. Pina,B. F. O. Costa,E. López-Lago
DOI: https://doi.org/10.1039/d4dt00198b
IF: 4
2024-04-18
Dalton Transactions
Abstract:The spinels ZnAl 1.99− x Ho x Cr 0.01 O 4 (with x = 0 and 0.001) were synthesized using a solid-state method, and various techniques were employed for their characterization. X-ray diffraction (XRD) analysis confirmed a cubic spinel structure with the Fd m space group for both spinels. The morphology and homogeneity of the chemical composition were determined using scanning electron microscopy (SEM) and energy dispersive X-ray analysis. Raman and infrared vibrational spectroscopy techniques were also employed for analysis. The optical band gap ( E g ) was determined from UV/vis absorption spectra, and the direct transition behavior was confirmed by Tauc's law. The observed large disorder and defect concentration are attributed to the presence of Cr 3+ and Ho 3+ ions, explaining this behavior. The electron paramagnetic resonance (EPR) measurement presented different types of traps. Room temperature absorption spectra exhibited multiple peaks corresponding to the 3d–3d and 4f–4f transitions of Cr 3+ and Ho 3+ ions. The results obtained validate the significance of our compounds in optoelectronic device applications.
chemistry, inorganic & nuclear
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