Abstract:Ultrathin films of manganese silicides on silicon are of relevance as a possible material system for building spintronics devices with silicon technology. In order to achieve insight into epitaxial growth of such films on Si(001), total-energy calculations are presented using density-functional theory and the full-potential augmented plane wave plus local orbital method. For adsorption of a single Mn atom on Si(001), we find that binding at the subsurface sites below the Si surface dimers is similar to 0.9 eV stronger than on-surface adsorption. There is an energy barrier of only 0.3 eV for adsorbed Mn to go subsurface, and an energy barrier of 1.2 eV for the reverse process. From the calculated potential-energy surface for the Mn adatom, we conclude that the most stable site on the surface corresponds to the hollow site where Mn is placed between two Si surface dimers. For on-surface diffusion, both along and perpendicular to the Si dimer rows, the Mn atoms have to overcome energy barriers of 0.65 eV. For deposition of 0.5 monolayers (ML) or more, we find that the Si dimers of the Si(001) surface are broken up, and a mixed MnSi layer becomes the energetically most favorable structure. For coverages above 1 ML, the lowest-energy structure changes to a full Mn subsurface layer, capped by a layer of Si adatoms. We identify this transition with the onset of Mn-silicide formation in an epitaxially stabilized CsCl-like crystal structure. Such MnSi films are found to have sizable magnetic moments at the Mn atoms near the surface and interface, and ferromagnetic coupling of the Mn magnetic moments within the layers. Layer-resolved electronic densities of state are presented that show a high degree of spin polarization at the Fermi level, up to 45% and 27% for films with two or three Si-Mn layers, respectively.

B20–MnSi films grown on Si(100) substrates with magnetic skyrmion signature

Growth of skyrmionic MnSi nanowires on Si: Critical importance of the SiO 2 layer

Phase Selection in Mn–Si Alloys by Fast Solid‐State Reaction with Enhanced Skyrmion Stability

Robust Formation of Skyrmions and Topological Hall Effect Anomaly in Epitaxial Thin Films of MnSi.

Spontaneous Skyrmion Bubbles in an Iron-Silicon Alloy with Uniaxial Magnetic Anisotropy

Direct Observation of Magnetic Skyrmions and Their Current-Induced Dynamics in Epitaxial Single-Crystal Oxide Films

Highly Stable Skyrmion State In Helimagnetic Mnsi Nanowires

A new class of chiral materials hosting magnetic skyrmions beyond room temperature

Ferromagnetic MnSn Monolayer Epitaxially Grown on Silicon Substrate

Epitaxy of Mn on Si(001): Adsorption, Surface Diffusion, and Magnetic Properties Studied by Density-Functional Theory

Molecular Beam Epitaxy Growth of [CrGe/MnGe/FeGe] Superlattices: Toward Artificial B20 Skyrmion Materials with Tunable Interactions

Skyrmion Lattice Manipulation with Electric Currents and Thermal Gradients in MnSi

Experimental demonstration of skyrmionic magnetic tunnel junction at room temperature

Detailed dynamics of a moving magnetic skyrmion lattice in MnSi observed using a small-angle neutron scattering under an alternating electric current flow

The 20-nm Skyrmion Generated at Room Temperature by Spin-Orbit Torques

Embedded Skyrmion Bags in Thin Films of Chiral Magnets

Electronic structures of skyrmionic polycrystalline MnSi thin film studied by resonance photoemission and x-ray near edge spectroscopy

Weak crystallization of fluctuating skyrmion textures in MnSi

Manipulation of magnetic skyrmions in continuous Ir/Co/Pt multilayers

Stabilization and Reversal of Skyrmion Lattice in Ta/CoFeB/MgO Multilayers

Reciprocal space mapping of magnetic order in thick epitaxial MnSi films