Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

Revealing the decisive factors of the lattice thermal conductivity reduction by electron-phonon interactions in half-Heusler semiconductors

Thermoelectric Performance of Half-Heusler Compounds TiNiSn and TiCoSb

Improving the thermoelectric performance of double half-Heusler compounds ZrNi(In,Sb)

Grain Boundary Scattering of Charge Transport in n‐Type (Hf,Zr)CoSb Half‐Heusler Thermoelectric Materials

Strong electron-phonon interaction induced significant reduction in lattice thermal conductivities for single-layer MoS2 and PtSSe

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Establishing the Carrier Scattering Phase Diagram for ZrNiSn-based Half-Heusler Thermoelectric Materials

Lattice thermal conductivity of Ti$_x$Zr$_y$Hf$_{1-x-y}$NiSn half-Heusler alloys calculated from first principles: Key role of nature of phonon modes

Optical phonon modes assisted thermal conductivity in p-type ZrIrSb Half-Heusler alloy: A combined experimental and computational study

Electronic structure and low-temperature thermoelectric transport of TiCoSb single crystals

The Role of Electron-Phonon Interaction in Heavily Doped Fine-Grained Bulk Silicons As Thermoelectric Materials

Computational understanding and prediction of 8-electron half-Heusler compounds with unusual suppressed phonon conduction

An Enormous Class of Double Half-Heusler Compounds with Low Thermal Conductivity

Suppression of Intervalley Scattering and Enhanced Phonon Anharmonic Interactions in 2D Bi2TeSe2: Crystal-field Symmetry and Band Convergence

Reducing Lattice Thermal Conductivity of the Thermoelectric SnSe Monolayer: Role of Phonon–Electron Coupling

Transport Mechanisms and Property Optimization of P-Type (zr, Hf) CoSb Half-Heusler Thermoelectric Materials

Electron And Phonon Transport In Co-Doped Fev0.6nb0.4sb Half-Heusler Thermoelectric Materials

Simultaneous optimization of the electrical and thermal transport properties of LuNiSb <i>via</i> aliovalent doping

Influence of Electron–Phonon Interaction on the Lattice Thermal Conductivity in Single‐Crystal Si

Low-Lattice Thermal Conductivity in Zr-Doped Ti 2 NiCoSnSb Thermoelectric Double Half-Heusler Alloys

High thermoelectric performance in ZrNiSn through electron injection and boosting carrier mobility