Abstract:This work, presents a study of lifetime of carriers due to intrinsic scattering mechanisms $viz.$ electron-electron (EEI), electron-phonon (EPI) and phonon-phonon interactions (PPI) in a promising half-Heusler thermoelectric FeVSb. Using the full-$GW$ method, the effect of EEI and temperature on the valence and conduction band extrema and band gap are studied. The lifetime of carriers with temperature are estimated at these band extrema. At 300 K, estimated value of lifetime at VBM (CBM) is $\sim$1.91 x10$^{-14}s$ ($\sim$2.05 x10$^{-14}s$). The estimated ground state band gap considering EEI is $\sim$378 meV. Next, the effect of EPI on the lifetime of electrons and phonons with temperature are discussed. The comparison of two electron lifetimes suggests that EEI should be considered in transport calculations along with EPI. The average acoustic, optical and overall phonon lifetimes due to EPI are studied with temperature. Further, the effect of PPI is studied by computing average phonon lifetime for acoustic and optical phonon branches. The lifetime of the acoustic phonons are higher compared to optical phonons which indicates acoustic phonons contribute more to lattice thermal conductivity ($\kappa_{ph}$). The comparison of phonon lifetime due to EPI and PPI suggests that, above 500 K EPI is the dominant phonon scattering mechanism and cannot be ignored in $\kappa_{ph}$ calculations. Lastly, a prediction of the power factor and figure of merit of n-type and p-type FeVSb is made by considering the temperature dependent carrier lifetime for the electronic transport terms. This study shows the importance of considering EEI in electronic transport calculations and EPI in phonon transport calculations. Our study is expected to provide results to further explore the thermoelectric transport in this material.

Electron And Phonon Transport In Co-Doped Fev0.6nb0.4sb Half-Heusler Thermoelectric Materials

Enhanced Phonon Scattering By Mass And Strain Field Fluctuations In Nb Substituted Fevsb Half-Heusler Thermoelectric Materials

Grain Boundary Scattering of Charge Transport in n‐Type (Hf,Zr)CoSb Half‐Heusler Thermoelectric Materials

Half-Heusler thermoelectric materials: NMR studies

Thermoelectric Performance of Half-Heusler Compounds TiNiSn and TiCoSb

Lattice Thermal Conductivity and Spectral Phonon Scattering in Fevsb-Based Half-Heusler Compounds

Enhanced Thermoelectric Performance in the N-Type NbFeSb Half-Heusler Compound with Heavy Element Ir Doping

Studying the lifetime of charge and heat carriers due to intrinsic scattering mechanisms in FeVSb half-Heusler thermoelectric

Defect Charging and Resonant Levels in Half-Heusler Nb1−Ti FeSb

Origin of efficient thermoelectric performance in half-Heusler FeNb_0.8Ti_0.2Sb

Thermoelectric Properties of FeVSb Half-Heusler Compounds by Levitation Melting and Spark Plasma Sintering

Enhanced Thermoelectric Performance in 18‐electron Nb0.8CoSb Half‐Heusler Compound with Intrinsic Nb Vacancies

The effect of Sn doping on thermoelectric performance of n-type half-Heusler NbCoSb.

Defect charging and resonant states in half-Heusler Nb$_{1-x}$Ti$_x$FeSb

Mode Grüneisen Parameters of an Efficient Thermoelectric Half-Heusler

Titanium Doping to Enhance Thermoelectric Performance of 19-Electron VCoSb Half-Heusler Compounds with Vanadium Vacancies

First-principle investigation on the thermoelectric and electronic properties of HfCoX (X=As, Sb, Bi) half-Heusler compounds

Transport Mechanisms and Property Optimization of P-Type (zr, Hf) CoSb Half-Heusler Thermoelectric Materials

Enhanced Thermoelectric Properties of Nb-Doped Ti(FeCoNi)Sb Pseudo-Ternary Half-Heusler Alloys Prepared Using the Microwave Method

Improved Thermoelectric Performance in N-Type Half-Heusler NbCoSn by Heavy-Element Pt Doping

Enhancing Thermoelectric Performance of FeNbSb Half-Heusler Compound by Hf-Ti Dual-Doping