Abstract:The metal-insulator transition (MIT) of VO2 is discussed with particular emphasis on the structural instability of the rutile compounds toward dimerization. Ti substitution experiments reveal that the MIT is robust up to 20% Ti substitutions and occurs even in extremely thin V-rich lamellas in spinodally decomposed TiO2-VO2 composites, indicating that the MIT is insensitive to hole doping and essentially takes on a local character. These observations suggest that either electron correlation in the Mott-Hubbard sense or Peierls (Fermi-surface) instability plays a minor role on the MIT. Through a broad perspective of crystal chemistry on the rutile-related compounds, it is noted that VO2 and another MIT compound NbO2 in the family eventually lie just near the borderline between the two structural groups with the regular rutile structure and the distorted structures characterized by the formation of dimers with direct metal-metal bonding. The MITs of VO2 and NbO2 are natural consequences of structural transitions between the two groups, as all the d electrons are trapped in the bonding molecular orbitals of dimers at low temperatures. Such dimer crystals are ubiquitously found in early transition metal compounds having chain-like structures, such as MoBr3, NbCl4, Ti4O7, and V4O7, the latter two of which also exhibit MITs probably of the same origin. In a broader sense, the dimer crystal is a kind of molecular orbital crystals in which virtual molecules made of transition metal atoms with partially-filled t2g shells, such as dimers, trimers or larger ones, are generated by metal-metal bonding and are embedded into edge- or face-sharing octahedron networks of various kinds. The molecular orbital crystallization opens a natural route to stabilization of unpaired t2g electrons in crystals.

Metal-insulator alternating behavior in VO2/TiO2 supercells

Metal-insulator transition through a semi-Dirac point in oxide nanostructures: VO$_2$ (001) layers confined within TiO$_2$

Metal-insulator transition in organic ion intercalated VSe<sub>2</sub> induced by dimensional crossover

Charge transfer and metal-insulator transition in (CrO<sub>2</sub>)<i><sub>m</sub></i>/(TaO<sub>2</sub>)<i><sub>n</sub></i > superlattices

Metal-Insulator Transition of Single-Crystal V2O3 Through Van Der Waals Interface Engineering

Charge transfer and metal-insulator transition in (CrO<sub>2</sub>)<sub>m</sub>/(TaO<sub>2</sub>)<sub>n</sub> superlattices

Hidden magnetism and split off flat bands in the insulator metal transition in VO 2

A First-Principles Study of Band Structure Modulation at TiO2 Heterogeneous Interfaces

Comprehensive Study of the Metal-Insulator Transition in Pulsed Laser Deposited Epitaxial VO2 Thin Films

Metal-insulator Transition in VO2: a DFT+DMFT perspective

Metal-Insulator Transition of Single-Crystal V 2 O 3 through van der Waals Interface Engineering

Emergent topological states via digital (001) oxide superlattices

Nanoscale Phase Separation and Lattice Complexity in VO2: the Metal–Insulator Transition Investigated by XANES Via Auger Electron Yield at the Vanadium L23-Edge and Resonant Photoemission

Charge transfer across transition metal oxide interfaces: emergent conductance and new electronic structure

Structural instability of the rutile compounds and its relevance to the metal-insulator transition of VO2

The tetragonal-like to rutile structural phase transition in epitaxial VO2/TiO2 (001) thick films

Hall Voltage Reversal and Structural Phase Transition in VO2 Thin Films

Metal-insulator transition of SrVO 3 ultrathin films embedded in SrVO 3 / SrTiO 3 superlattices

Unveiling the Mechanisms of Metal-Insulator Transitions in V2O3 : the Role of Trigonal Distortion

Comprehensive studies of interfacial strain and oxygen vacancy on metal-insulator transition of VO2 film.

Observation of new intrinsic properties of VO2