A First-Principles Study of Band Structure Modulation at TiO2 Heterogeneous Interfaces

Shuai Li,Peng Li,Yixiao Jiang,Xiang Li,Sheng Zhang,Ziyi Sun,Tingting Yao,Chunlin Chen
DOI: https://doi.org/10.1016/j.commatsci.2024.113550
IF: 3.572
2025-01-01
Computational Materials Science
Abstract:To enhance the catalytic efficiency of titanium dioxide (TiO2), functioning as a wide-band semiconductor, it is necessary to facilitate the separation of photogenerated charges by modulating its band structure. We constructed (TiO2)n/LaAlO3 (n = 4–11) superlattice models and performed systematic first-principles calculations to investigate the modulation of the thickness of TiO2 on its band structure at interfaces. The results demonstrate that the electrostatic potential differences in the superlattices are higher for the odd layers of TiO2 than those for the even layers. On the other hand, the band gaps of TiO2 at interfaces are all lower than that in the bulk TiO2. As the thickness is increased from 4 to 11 layers, the band gap of TiO2 at the Al-O terminated interface shows a gradual increase. In contrast, the band gap of TiO2 at the La-O terminated interface exhibits fluctuations. These finds demonatrate the thickness and odd–even layers of TiO2 in TiO2/LaAlO3 superlattices can effectively modulate the built-in electric field and the band gap of TiO2 at interfaces.
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