Abstract:The GeSbTe-based chalcogenides (GST, such as Ge 1 Sb 2 Te 4 and Ge 2 Sb 2 Te 5 ) as a kind of most popular functional materials, show great application potential in the fields of memory device, electronic display and others, due to their unique physical properties [ 1 ]. Usually these materials have three solid states: amorphous, metastable and stable phase. In the past two decades, many groups have made great efforts to reveal the structural mystery of the metastable phase. It's generally accepted that the GST metastable phase possess a rocksalt-like structure with Te occupy one sublattice and Ge/Sb with a certain amount of vacancies share the other one. However, up to now no direct evidence that confirm the existence of the vacancies was reported. In the present work, an art-of-state atomic structural investigation method [ 2 ], that is Cs-corrected scanning transmission electron microscope (STEM) combine with Super-EDX (which was assistant to obtain elemental information on atomic scale), and a local normalization method image processing were used to reveal the presence of vacant sites and their distribution directly in the GST metastable phase. Generally speaking, our results, on the one hand, they were helpful to deeply understand the structure as well as physical properties of the materials; on the other hand, it suggested that the Cs-STEM with atomic EDX-Mappings was powerful to directly investigate the atomic structure with chemical identification. Furthermore, the local normalization method we explored here should be useful to analysis the local structures from the HAADF or HRTEM images.

Study of vacancy ordering and the boson peak in metastable cubic Ge-Sb-Te using machine learning potentials

Study of vacancy ordering and the boson peak in metastable cubic Ge-Sb-Te using machine learning potentials

In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys

Probing the local environment of two-dimensional ordered vacancy structures in Ga2SeTe2 via aberration-corrected electron microscopy

In situ atomic-scale observation of transformation from disordered to ordered layered structures in Ge-Sb-Te phase change memory thin films

Vacancy-mediated electronic localization and phase transition in cubic Sb2Te3

In Situ Study of Vacancy Disordering in Crystalline Phase-Change Materials under Electron Beam Irradiation

Ab Initio Molecular Dynamics: Disorder Control in Crystalline GeSb2Te4 Using High Pressure (adv. Sci. 8/2015)

Weak antilocalization and disorder-enhanced electron interactions in crystalline GeSbTe

Structural Disorder in the High-Temperature Cubic Phase of GeTe

Element-specific Amorphization of Vacancy-Ordered GeSbTe for Ternary-State Phase Change Memory

Atomic Structure and Dynamics of Unusual and Wide‐Gap Phase‐Change Chalcogenides: A GeTe2 Case

B23-O-14 Direct Observation the Vacant Sites in the GeSbTe Metastable Polycrystalline Phase

Structure and Dynamics of Supercooled Liquid Ge2Sb2Te5 from Machine‐Learning‐Driven Simulations

Gold fillings unravel the vacancy role in the phase transition of GeTe

Inherent Simple Cubic Lattice Being Responsible for Ultrafast Solid-Phase Change of Ge2Sb2Te5

Vacancy Structures and Melting Behavior in Rock-Salt GeSbTe.

Origin of Short- and Medium-Range Order in Supercooled Liquid Ge3Sb2Te6 Using Ab Initio Molecular Dynamics Simulations.

In‐Plane Twinning Defects in Hexagonal GeSb 2 Te 4

Atomic‐Scale Visualization and Quantification of Configurational Entropy in Relation to Thermal Conductivity: A Proof‐of‐Principle Study in T‐gesb2te4

Effect of vacancy ordering on the grain growth of Ge2Sb2Te5 film