Abstract:Graphene nanoribbons (GNRs) with widths of a few nanometres are promising candidates for future nano‐electronic applications due to their structurally tunable bandgaps, ultrahigh carrier mobilities, and exceptional stability. However, the direct growth of micrometre‐long GNRs on insulating substrates, which is essential for the fabrication of nano‐electronic devices, remains an immense challenge. Here, we report the epitaxial growth of GNRs on an insulating hexagonal boron nitride (h‐BN) substrate through nanoparticle‐catalysed chemical vapor deposition (CVD). Ultra‐narrow GNRs with lengths of up to 10 μm are synthesized. Remarkably, the as‐grown GNRs are crystallographically aligned with the h‐BN substrate, forming one‐dimensional (1D) moiré superlattices. Scanning tunnelling microscopy reveals an average width of 2 nm and a typical bandgap of ∼1 eV for similar GNRs grown on conducting graphite substrates. Fully atomistic computational simulations support the experimental results and reveal a competition between the formation of GNRs and carbon nanotubes (CNTs) during the nucleation stage, and van der Waals sliding of the GNRs on the h‐BN substrate throughout the growth stage. Our study provides a scalable, single‐step method for growing micrometre‐long narrow GNRs on insulating substrates, thus opening a route to explore the performance of high‐quality GNR devices and the fundamental physics of 1D moiré superlattices. This article is protected by copyright. All rights reserved

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