Abstract:Interface of transition metal dichalcogenide (TMDC) and high-k dielectric transition metal oxides (TMO) had triggerred umpteen discourses due to the indubitable impact of TMO in reducing the contact resistances and restraining the Fermi-level pinning for the metal-TMDC contacts. In the present work, we focus on the unresolved tumults of large-area TMDC/TMO interfaces, grown by adopting different techniques. Here, on a pulsed laser deposited (PLD) MoS2 thin film, a layer of TiO2 is grown by using both atomic layer deposition (ALD) and PLD. These two different techniques emanate TiO2 layers with different crystalline properties, thicknesses and interfacial morphologies, subsequently influencing the electronic and optical properties of the interfaces. In addition, they manifest a boost in the extent of p-type doping with increasing thickness of TiO2, as emerged after analyzing the core-level shifts of the X-ray photoelectron spectra (XPS). Density functional analysis of the MoS2/Anatase-TiO2 interfaces, for pristine and in presence of a wide range of interfacial defects, could explain the interdependence of doping and the terminating atomic-surface of TiO2 on MoS2. The optical properties of the interface, encompassing the photoluminescence, transient absorption and z-scan two-photon absorption indicate the presence of defect-induced localized mid-gap levels in MoS2/TiO2 (PLD), resulting quenched exciton signals. On the contrary, the relatively defect-free interface in MoS2/TiO2 (ALD) demonstrates a clear presence of both A and B excitons of MoS2. From the investigation of optical properties, we indicate that MoS2/TiO2 (PLD) interface may act as a promising saturable absorber. Moreover, MoS2/TiO2 (PLD) interface had resulted a better photo-transport. A potential application of MoS2/TiO2 (PLD) is demonstrated by the fabrication of a p-type photo-transistor with the ionic-gel top gate.

Revealing the Polaron State at the MoS 2 /TiO 2 Interface

Revealing the Polaron State at the MoS2/TiO2 Interface

Modulated Photoluminescence of Single-Layer MoS2 on Various Rutile TiO2 Surfaces: Implications for Photocatalytic Applications

Interfacial Polarons in Van Der Waals Heterojunction of Monolayer SnSe2 on SrTiO3 (001).

Probing Interface of Perovskite Oxide Using Surface-specific Terahertz Spectroscopy

Changes of Phonon Modes and Electron Transfer Induced by Interface Interactions of Pd/MoS2 Heterostructures

The tunable interface charge transfer by polarization in two dimensional polar Al2O3/MoSO heterostructures

Uncovering the photoelectronic/catalytic property modulation and applications of 2D MoS2: from the perspective of constructing heterogeneous interfaces

Correlating the Electronic Structures of Metallic/semiconducting MoTe2 Interface to Its Atomic Structures

Probing Ligand-Induced Cooperative Orbital Redistribution That Dominates Nanoscale Molecule-Surface Interactions with One-Unit-Thin TiO2 Nanosheets

On/Off Boundary of Photocatalytic Activity between Single- and Bilayer MoS2

Discovery and Manipulation of van der Waals Polarons in Sb2O3 Ultrathin Molecular Crystal

Chemical States Change at (ba,sr)tio3/pt Interfaces Investigated by X-Ray Photoelectron Spectroscopy

Direct observation of two-dimensional small polarons at correlated oxide interface

Single-Layered MoS2 Directly Grown on Rutile TiO2(110) for Enhanced Interfacial Charge Transfer

Unveiling Atomic‐Scale Product Selectivity at the Cocatalyst‐TiO2 Interface Using X‐Ray Techniques: Insights into Interface Reactivity

Coexistence of Both Localized Electronic States and Electron Gas at Rutile TiO2 Surfaces

Revealing Fermi Arcs and Weyl Nodes in MoTe 2 by Quasiparticle Interference Mapping

Tio2-Sno2:F Interfacial Electronic Structure Investigated by Soft X-Ray Absorption Spectroscopy

Combinatorial Large-area MoS2/Anatase-TiO2 interface: A Pathway to Emergent Optical and Opto-electronic Functionalities

Scanning Tunneling Microscopy Visualization of Polaron Charge Trapping by Hydroxyls on TiO 2 (110)