Novel phenomenon of negative permittivity in silicon-based PiN diodes induced by electron irradiation

Yun Li,Min Gong,Zhimei Yang,Ping Su,Yao Ma,Sijie Fan,Mingmin Huang
DOI: https://doi.org/10.1016/j.spmi.2020.106755
IF: 3.22
2021-01-01
Superlattices and Microstructures
Abstract:<p>The negative permittivity of silicon-based PiN diodes is investigated experimentally in the frequency range from 1 Hz to 10 MHz, where electron irradiations and annealing thermal treatments are carried out. The permittivity is found be greatly affected by electron irradiations. In addition, the dispersion-free region is found be occurred in the samples irradiated by electron dose≥5.4646×10<sup>14</sup> e/cm<sup>2</sup>. Besides, annealing treatments also have an effect on the permittivity. It is interesting to find that, the annealing treatments lead to more negative platform (i.e., dispersion-free region) values of permittivity for samples irradiated by electron dose≥5.4646×10<sup>14</sup> e/cm<sup>2</sup>, and the negative platform values under 350 °C annealing treatment are lower than that under 150 °C annealing treatment when the electron irradiation dose is higher than 1.0929×10<sup>15</sup> e/cm<sup>2</sup>. The novel phenomenon found in this work may provide new ideas for the application of semiconductor devices in information transmission, storage and processing.</p>
physics, condensed matter
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