Abstract:Two-dimensional transition metal dichalcogenide semiconductors have emerged as promising candidates for optoelectronic devices with unprecedented properties and ultra-compact footprints. However, the high sensitivity of atomically thin materials to the surrounding dielectric media imposes severe limitations on their practical applicability. Hence, to enable the effective integration of these materials in devices, the development of reliable encapsulation procedures that preserve their physical properties is required. Here, the excitonic photoluminescence (at room temperature and 10 K) is assessed on mechanically exfoliated WSe2 monolayer flakes encapsulated with SiOx and AlxOy layers by means of chemical and physical deposition techniques. Conformal coating on untreated and non-functionalized flakes is successfully achieved by all the techniques examined, with the exception of atomic layer deposition, for which a cluster-like oxide coating is formed. No significant compositional or strain state changes in the flakes are detected upon encapsulation, independently of the technique adopted. Remarkably, our results show that the optical emission of the flakes is strongly influenced by the stoichiometry quality of the encapsulating oxide. When the encapsulation is carried out with slightly sub-stoichiometric oxides, two remarkable phenomena are observed. First, dominant trion (charged exciton) photoluminescence is detected at room temperature, revealing a clear electrical doping of the monolayers. Second, a strong decrease in the optical emission of the monolayers is observed, and attributed to non-radiative recombination processes and/or carrier transfer from the flake to the oxide. Power- and temperature-dependent photoluminescence measurements further confirm that stoichiometric oxides obtained by physical deposition lead to a successful encapsulation, opening a promising route for the development of integrated two-dimensional devices.

Effects of dielectric stoichiometry on the photoluminescence properties of encapsulated WSe2 monolayers

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Influence of direct deposition of dielectric materials on the optical response of monolayer WS 2

Impacts of dielectric screening on the luminescence of monolayer WSe$_2$

Investigating the impact of ITO substrates on the optical and electronic properties of WSe 2 monolayers

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

Optical Grade Transformation of Monolayer Transition Metal Dichalcogenides via Encapsulation Annealing

Unidirectional Enhanced Emission from 2D Monolayer Suspended by Dielectric Pillar Array.

Photoluminescence Switching Effect in a Two-Dimensional Atomic Crystal

Substrate Engineering for High-Quality Emission of Free and Localized Excitons from Atomic Monolayers in Hybrid Architectures

Photoluminescence switching in a two-dimensional atomic crystal

Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films

Room Temperature Micro-Photoluminescence Studies of Colloidal WS2 Nanosheets

Unveiling the Optical Emission Channels of Monolayer Semiconductors Coupled to Silicon Nanoantennas

Synchronized Photoluminescence and Electrical Mobility Enhancement in 2D WS2 through Sequence-Specific Chemical Passivation

Electronic and Optoelectronic Monolayer WSe2 Devices Via Transfer-Free Fabrication Method.

Photoluminescence Lightening: Extraordinary Oxygen Modulated Dynamics in WS 2 Monolayers

Shedding light on the monolayer-WSe2 exciton's nature by optical effective-mass measurements

Enhanced Photoluminescence of Solution-Exfoliated Transition Metal Dichalcogenides by Laser Etching

Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions