Abstract:Single layers of transition metal dichalcogenides, such as WSe$_2$ have gathered increasing attention due to their intense electron-hole interactions, being considered promising candidates for developing novel optical applications. Within the few-layer regime, these systems become highly sensitive to the surrounding environment, enabling the possibility of using a proper substrate to tune desired aspects of these atomically-thin semiconductors. In this scenario, the dielectric environment provided by the substrates exerts significant influence on electronic and optical properties of these layered materials, affecting the electronic band-gap and the exciton binding energy. However, the corresponding effect on the luminescence of transition metal dichalcogenides is still under discussion. To elucidate these impacts, we used a broad set of materials as substrates for single-layers of WSe$_2$, enabling the observation of these effects over a wide range of electrical permittivities. Our results demonstrate that an increasing permittivity induces a systematic red-shift of the optical band-gap of WSe$_2$, intrinsically related to a considerable reduction of the luminescence intensity. Moreover, we annealed the samples to ensure a tight coupling between WSe$_2$and its substrates, reducing the effect of undesired adsorbates trapped in the interface. Ultimately, our findings reveal how critical the annealing temperature can be, indicating that above a certain threshold, the heating treatment can induce adverse impacts on the luminescence. Furthermore, our conclusions highlight the influence the dielectric properties of the substrate have on the luminescence of WSe$_2$, showing that a low electrical permittivity favours preserving the native properties of the adjacent monolayer

What problem does this paper attempt to address?

The paper primarily explores the impact of different dielectric environments on the photoluminescence properties of monolayer tungsten diselenide (WSe₂). Specifically, the research team used a series of substrate materials with different dielectric constants and analyzed the changes in the optical properties of monolayer WSe₂ on these substrates through photoluminescence (PL) spectroscopy. The main issues the paper attempts to address are as follows: 1. **Dielectric Screening Effect**: - The paper aims to study how different dielectric environments affect the photoluminescence properties of monolayer WSe₂. The research found that as the dielectric constant of the substrate material increases, the optical bandgap of WSe₂ systematically redshifts, and the photoluminescence intensity significantly decreases. This indicates that the dielectric environment has a crucial impact on electron-hole interactions. 2. **Effect of Annealing Treatment**: - The study also examined the impact of annealing temperature on the photoluminescence performance of monolayer WSe₂. The results show that annealing within a certain temperature range can improve photoluminescence efficiency, but beyond a certain threshold, high-temperature annealing leads to a sharp decline in photoluminescence intensity. This suggests that appropriate annealing conditions are essential for optimizing photoluminescence performance. 3. **Choice of Substrate Material**: - Different types of substrate materials have varying effects on the photoluminescence performance of monolayer WSe₂. For example, hexagonal boron nitride (h-BN) as a substrate can better preserve the intrinsic properties of WSe₂, while conductive substrates like gold (Au) can weaken the photoluminescence intensity. Therefore, selecting suitable substrate materials is crucial for regulating photoluminescence properties. In summary, through experiments and data analysis, the paper reveals the key impact of the dielectric environment on the photoluminescence properties of monolayer WSe₂ and emphasizes the importance of rationally choosing substrate materials and controlling annealing conditions.

Impacts of dielectric screening on the luminescence of monolayer WSe$_2$