Abstract:Two-dimensional transition metal dichalcogenide semiconductors have emerged as promising candidates for optoelectronic devices with unprecedented properties and ultra-compact footprints. However, the high sensitivity of atomically thin materials to the surrounding dielectric media imposes severe limitations on their practical applicability. Hence, to enable the effective integration of these materials in devices, the development of reliable encapsulation procedures that preserve their physical properties is required. Here, the excitonic photoluminescence (at room temperature and 10 K) is assessed on mechanically exfoliated WSe2 monolayer flakes encapsulated with SiOx and AlxOy layers by means of chemical and physical deposition techniques. Conformal coating on untreated and non-functionalized flakes is successfully achieved by all the techniques examined, with the exception of atomic layer deposition, for which a cluster-like oxide coating is formed. No significant compositional or strain state changes in the flakes are detected upon encapsulation, independently of the technique adopted. Remarkably, our results show that the optical emission of the flakes is strongly influenced by the stoichiometry quality of the encapsulating oxide. When the encapsulation is carried out with slightly sub-stoichiometric oxides, two remarkable phenomena are observed. First, dominant trion (charged exciton) photoluminescence is detected at room temperature, revealing a clear electrical doping of the monolayers. Second, a strong decrease in the optical emission of the monolayers is observed, and attributed to non-radiative recombination processes and/or carrier transfer from the flake to the oxide. Power- and temperature-dependent photoluminescence measurements further confirm that stoichiometric oxides obtained by physical deposition lead to a successful encapsulation, opening a promising route for the development of integrated two-dimensional devices.

Unidirectional Enhanced Emission from 2D Monolayer Suspended by Dielectric Pillar Array.

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Unidirectional Doubly Enhanced MoS2 Emission Via Photonic Fano Resonances

Radiative enhancement of single quantum emitters in WSe2 monolayers using site-controlled metallic nano-pillars

Azimuthally Polarized and Unidirectional Excitonic Emission from Deep Subwavelength Transition Metal Dichalcogenide Annular Heterostructures

Enhanced Optical Absorption and Emission from Monolayer WS2 Integrated Onto a TiO2 Nanohole Array

Giant Photoluminescence Enhancement of Monolayer WSe2 Using a Plasmonic Nanocavity with On-Demand Resonance

Enhanced directional emission of monolayer tungsten disulfide (WS2) with robust linear polarization via one-dimensional photonic crystal (PhC) slab

Unveiling the Optical Emission Channels of Monolayer Semiconductors Coupled to Silicon Nanoantennas

Efficient cathodoluminescence of monolayer transitional metal dichalcogenides in a van der Waals heterostructure

Effects of dielectric stoichiometry on the photoluminescence properties of encapsulated WSe2 monolayers

Simultaneously Enhancing Brightness and Purity of WSe2 Single Photon Emitter Using High-Aspect-Ratio Nanopillar Array on Metal

Simultaneously Enhancing Brightness and Purity of WSe 2 Single Photon Emitter Using High-Aspect-Ratio Nanopillar Array on Metal

Testbeds for Transition Metal Dichalcogenide Photonics: Efficacy of Light Emission Enhancement in Monomer vs. Dimer Nanoscale Antennae

Control of Two-Dimensional Excitonic Light Emission via Photonic Crystal

Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions

Enhancement of the Monolayer WS2 Exciton Photoluminescence with a 2D-Material/Air/GaP In-Plane Microcavity

Simultaneously enhancing brightness and purity of WSe$_2$ single photon emitter using high-aspect-ratio nanopillar array on metal

Monolayer Tungsten Disulfide Laser

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2