Abstract:A novel strategy for engineering dielectric permittivity, converse piezoelectric coefficient, and alternating current conductivity through a dislocation density‐based approach is introduced. This innovative dislocation‐centric design within bulk ferroelectrics represents a concept with the potential for broad application to other materials, potentially ushering in a new era for dislocation. Unlike metals where dislocations carry strain singularity but no charge, dislocations in oxide ceramics are characterized by both a strain field and a local charge with a compensating charge envelope. Oxide ceramics with their deliberate engineering and manipulation are pivotal in numerous modern technologies such as semiconductors, superconductors, solar cells, and ferroics. Dislocations facilitate plastic deformation in metals and lead to a monotonous increase in the strength of metallic materials in accordance with the widely recognized Taylor hardening law. However, achieving the objective of tailoring the functionality of oxide ceramics by dislocation density still remains elusive. Here a strategy to imprint dislocations with {100} slip systems and a tenfold change in dislocation density of BaTiO3 single crystals using high‐temperature uniaxial compression are reported. Through a dislocation density‐based approach, dielectric permittivity, converse piezoelectric coefficient, and alternating current conductivity are tailored, exhibiting a peak at medium dislocation density. Combined with phase‐field simulations and domain wall potential energy analyses, the dislocation‐density‐based design in bulk ferroelectrics is mechanistically rationalized. These findings may provide a new dimension for employing plastic strain engineering to tune the electrical properties of ferroics, potentially paving the way for advancing dislocation technology in functional ceramics.

Anisotropic dislocation-domain wall interactions in ferroelectrics

Effect of Dislocation Walls on the Polarization Switching of a Ferroelectric Single Crystal

Anisotropic conductance at improper ferroelectric domain walls

Multiferroic Domain Walls in Ferroelectric PbTiO3 with Oxygen Deficiency.

Electromechanical coupling among edge dislocations, domain walls, and nanodomains in BiFeO3 revealed by unit-cell-wise strain and polarization maps

Interplay between Point and Extended Defects and Their Effects on Jerky Domain-Wall Motion in Ferroelectric Thin Films

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Electric Field Control of Multiferroic Domain Wall Motion

Dislocation Density‐Mediated Functionality in Single‐Crystal BaTiO3

Domain wall architecture in tetragonal ferroelectric thin films

Ferroic Dislocations in Paraelectric SrTiO3

Hybrid Functional Study on the Ferroelectricity of Domain Walls with O-vacancies in PbTiO3

Ferroelectric switching at symmetry-broken interfaces by local control of dislocation networks

Control of polarization in bulk ferroelectrics by mechanical dislocation imprint

A Predictive Theory for Domain Walls in Oxide Ferroelectrics Based on Interatomic Interactions and Its Implications for Collective Material Properties

Dynamics and Manipulation of Ferroelectric Domain Walls in Bismuth Ferrite Thin Films.

Intrinsic-Strain Engineering by Dislocation Imprint in Bulk Ferroelectrics

Atomic-environment-dependent Thickness of Ferroelastic Domain Walls Near Dislocations

Atomic-scale Mechanisms of Ferroelastic Domain-Wall-mediated Ferroelectric Switching

Pseudo‐Ferroelectric Domain‐Wall in Perovskite Ferroelectric Thin Films

Ferroelastic Domain Switching Dynamics under Electrical and Mechanical Excitations