Abstract:Ferroelastic domains generate polarity near domain walls via the flexoelectric effect. Applied electric fields change the wall dipoles and generate additional dipoles in the bulk. Molecular dynamics simulations show that the thickness of domain walls changes when an electric field is applied to the sample. Fields parallel to the walls lead to expansion of the wall thickness while fields perpendicular to the wall lead to shrinking of the wall thickness. The interactions between polar domain walls expand over more than 45 unit cells, the resulting forces change the wall-wall distances if pinning effects are small. The interaction increases nonlinearly with decreasing wall-wall distances favoring equal wall distances as the consequence of energy minimization under the constraints of a constant number of domain walls. Even for small groups of three walls the sequence of walls is locally periodic: assemblies of three parallel domain walls arrange themselves so that the intermediate domain wall is located exactly in the middle between the two outer walls. The driving force is appreciable if the distance between the outer domain walls is below approximately 30 lattice units. Pairs of domain walls often form needle domains where the shaft of the needle is ca. 3 lattice units wide. The movement of needle domains under applied electric field was simulated. The advancement and retraction of needles is larger in finite samples with charge-free surfaces than under periodic boundary conditions in the bulk. The needle tip moves even more freely when the sample surface is charged.

Interplay between Point and Extended Defects and Their Effects on Jerky Domain-Wall Motion in Ferroelectric Thin Films

Anisotropic dislocation-domain wall interactions in ferroelectrics

Electric Field Control of Multiferroic Domain Wall Motion

Effect of Dislocation Walls on the Polarization Switching of a Ferroelectric Single Crystal

Manipulation of Defects to Achieve Fast Domain Switching and Enhance the Piezoelectric Properties of Thin Films

Defects in motion

Spatial Coupling of Ferroelectric Domain Walls and Crystallographic Defects in the PbTiO3 Films

Multiferroic Domain Walls in Ferroelectric PbTiO3 with Oxygen Deficiency.

Revealing the Role of Defects in Ferroelectric Switching with Atomic Resolution.

Micro-/Macro-Responses of A Ferroelectric Single Crystal with Domain Pinning and Depinning by Dislocations

Influence of Dipolar Defects on Switching Behavior in Ferroelectrics

Ferroelastic Domain Switching Dynamics under Electrical and Mechanical Excitations

Atomic-scale Mechanisms of Ferroelastic Domain-Wall-mediated Ferroelectric Switching

Electromechanical coupling among edge dislocations, domain walls, and nanodomains in BiFeO3 revealed by unit-cell-wise strain and polarization maps

Domain-wall engineering and topological defects in ferroelectric and ferroelastic materials

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Pseudo‐Ferroelectric Domain‐Wall in Perovskite Ferroelectric Thin Films

Electrically Driven Ferroelastic Domain Walls, Domain Wall Interactions, and Moving Needle Domains

Identification of the defect distribution at ferroelectric domain walls from the evolution of nonlinear dielectric response during aging process

Correlation Between Nanoscale and Nanosecond Resolved Ferroelectric Domain Dynamics and Local Mechanical Compliance

Competition between Ferroelectric and Ferroelastic Domain Wall Dynamics during Local Switching in Rhombohedral PMN-PT Single Crystals