Abstract:Transparent amorphous oxide semiconductor (TAOS) based thin-film transistors (TFTs) are essential as the backplane for developing advanced flat panel displays. Among many TAOSs, amorphous (a-) SnO2 is promising active material due to its abundance compared with the state-of-the-art a-InGaZnO4. However, practical application of a-SnO2-based TFTs has not been realized because of its unstable transistor characteristics coming from the high residual carrier concentration. Precise optimization of the two-dimensional channel thickness is required to stabilize the transistor characteristics of a-SnO2-based TFTs. Here we use electric field thermopower modulation analyses to show that the two-dimensional channel thickness of a-SnO2 for TFT can be optimized at ∼2 nm. After the optimization of the channel thickness, we reduced the thickness of the HfO2 gate insulator film to further improve the transistor characteristics. The resultant TFT exhibited excellent transistor characteristics: on-to-off current ratio of ∼105, normally off behavior (Vth ≈ +0.65 V), small subthreshold swing of ∼230 mV/decade, high mobility (∼10 cm2 V–1 s–1), and stability in changing oxygen atmospheres. The present results would bring further possibilities for the development of next-generation low-cost and low-power electronic devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsanm.0c03069?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsanm.0c03069</a>.Transfer curves (Id–Vg); capacitance per unit area (Ci–Vg); sheet carrier concentration (ns–Vg); field effect mobility (μFE–Vg) of the 1.5-, 2-, and 3-nm-thick a-SnO2 TFTs with 160-nm-thick HfO2 gate insulators; sheet carrier concentration (ns) and field effect mobility (μFE) as a function of Vg; drain voltage dependence of the transfer characteristics Id–Vg in air of the 2-nm-thick a-SnO2 TFTs with 80-nm-thick HfO2 gate insulators; threshold voltage shift (ΔVth = Vth,BG – Vth,IN) of the 2-nm-thick top gated a-SnO2 TFT with 80-nm-thick a-HfO2 gate insulator under VBG = −3 (NGBS) and +6 V (PGBS) as a function of stress time; transfer curves (Id–Vg) of several 2-nm-thick a-SnO2 TFTs with 80-nm-thick a-HfO2 gate insulator on the same substrate; summary of the structure, on–off current ratio, threshold gate voltage (Vth), subthreshold swing factor (S.S.), field effect mobility (μFE), and fabrication method for SnO2 TFTs (<a class="ext-link" href="/doi/suppl/10.1021/acsanm.0c03069/suppl_file/an0c03069_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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