Adriana Simancas,Justus Braach,Eric Buschmann,Ankur Chauhan,Dominik Dannheim,Manuel Del Rio Viera,Katharina Dort,Doris Eckstein,Finn Feindt,Ingrid-Maria Gregor,Karsten Hansen,Lennart Huth,Larissa Mendes,Budi Mulyanto,Daniil Rastorguev,Christian Reckleben,Sara Ruiz Daza,Judith Schlaadt,Paul Schütze,Walter Snoeys,Simon Spannagel,Marcel Stanitzki,Anastasiia Velyka,Gianpiero Vignola,Håkan Wennlöf

Abstract:Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF, granting a high signal-to-noise ratio and low power consumption. Additionally, the 65 nm CMOS imaging technology brings a reduction in material budget and improved logic density of the readout circuitry, compared to previously studied technologies. Given these features, this technology was chosen by the TANGERINE project to develop the next generation of silicon pixel sensors. The sensor design targets temporal and spatial resolutions compatible with the requirements for a vertex detector at future lepton colliders. Simulations and test-beam characterization of technology demonstrators have been carried out in close collaboration with the CERN EP R&D program and the ALICE ITS3 upgrade. TCAD device simulations using generic doping profiles and Monte Carlo simulations have been used to build an understanding of the technology and predict the performance parameters of the sensor. Technology demonstrators of a 65 nm CMOS MAPS with a small collection electrode have been characterized in laboratory and test-beam facilities by studying performance parameters such as cluster size, charge collection, and efficiency. This work compares simulation results to test-beam data. The experimental results establish this technology as a promising candidate for a vertex detector at future lepton colliders and give valuable information for improving the simulation approach.

NAPA-p1: monolithic nanosecond timing pixel for large area sensors, designed for future e + e - colliders

A Full Functional Monolithic Active Pixel Sensor Prototype for the CEPC Vertex Detector

Towards a New Generation of Monolithic Active Pixel Sensors

Simulations and Performance Studies of a MAPS in 65 nm CMOS Imaging Technology

Sensor design optimization of innovative low-power, large area MAPS for HEP and applied science

Monolithic Active Pixel Sensors (MAPS) in a quadruple well technology for nearly 100% fill factor and full CMOS pixels

A monolithic active pixel sensor with node-based, data-driven, parallel readout for the high energy physics experiment vertex detector

Prototype design of a Monolithic Active Pixel Sensor for the Electron-ion collider in China

CMOS pixel sensors optimized for large ionizing dynamic

Depleted Fully Monolithic Active CMOS Pixel Sensors (DMAPS) in High Resistivity 150~nm Technology for LHC

Cross-talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180Â nm CMOS technology

Cross talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180 nm CMOS technology

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

CACTUS: A depleted monolithic active timing sensor using a CMOS radiation hard technology

Beam Test of a Monolithic Active Pixel Sensor for the CEPC Vertex Detector

Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180$\,$nm CMOS technology

Test-beam Performance Results of the FASTPIX Sub-Nanosecond CMOS Pixel Sensor Demonstrator

The Monopix chips: Depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade

MAPS sensor for radiation imaging designed in 180 nm SOI CMOS technology

Color Bosonization, Chiral Parametrization of Gluonic Field and QCD Effective Action

Silicon Avalanche Pixel Sensor for High Precision Tracking