Thermal dependence on electrical characteristics of Au/(PVC:Sm2O3)/n-Si structure
Yosef Badali,Hayati Altan,Semsettin Altındal
DOI: https://doi.org/10.1007/s10854-023-11898-2
2024-01-26
Journal of Materials Science Materials in Electronics
Abstract:In this study, we investigated the current–voltage ( I–V ) characteristics of Au/n-Si structure with an interfacial layer of Samarium Oxide (Sm 2 O 3 ) nanoparticles (NPs) in polyvinyl chloride (PVC) matrix within a temperature range of 80–320 K. Applying the thermionic emission (TE) theory, essential electrical parameters such as reverse saturation current ( I 0 ), ideality factor ( n ), zero bias barrier height (Φ B0 ), series resistance ( R s ), and rectification rate ( RR ) were carefully derived from the I–V data. The mean values of BH and Richardson constant obtained from the modified Richardson plot were determined to be 0.730 eV and 111.4 A/(cmK) 2 , respectively. Remarkably, this A * value closely matches its theoretical counterpart for n-type Si. Thus, our findings successfully highlight the effectiveness of the thermionic emission (TE) mechanism with the Gaussian distribution of BHs in explaining the I-V-T characteristics of the fabricated Schottky structure, shedding light on the intricate interplay between temperature and diode behavior. These insights offer valuable guidance for designing and optimizing thermal-sensitive devices based on this innovative structure.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied