Flat and safe under the graphene sheet

Claire Berger,Walt de Heer

DOI: https://doi.org/10.48550/arXiv.2005.12577

2020-05-26

Mesoscale and Nanoscale Physics

Abstract:Large-scale atomically thin metals can be stabilized through confinement epitaxy at graphene / SiC interface, which exhibit a gradient bonding type and are air stable, providing a compelling platform for quantum and optoelectronic technologies.

What problem does this paper attempt to address?

An Air-Stable and Atomically Thin Graphene/Gallium Superconducting Heterostructure

Brian Bersch,Natalie Briggs,Yuanxi Wang,Jue Jiang,Ke Wang,Chengye Dong,Shruti Subramanian,Mingming Fu,Qiang Zou,Ya-Wen Chuang,Zheng Gai,An-Ping Li,Jun Zhu,Cui-Zu Chang,Vincent H. Crespi,Joshua A. Robinson

DOI: https://doi.org/10.48550/arXiv.1905.09938

2019-05-23

Superconductivity

Abstract:Two-dimensional layered and atomically thin elemental superconductors may be key ingredients in next-generation quantum technologies, if they can be stabilized and integrated into heterostructured devices under ambient conditions. However, atomically thin elemental superconductors are largely unexplored outside ultra-high vacuum due to rapid oxidation, and even 2D layered superconductors require complex encapsulation strategies to maintain material quality. Here we demonstrate environmentally stable, single-crystal, few-atom-thick superconducting gallium, 2D-Ga, produced by confinement heteroepitaxy (CHet) at the interface of epitaxial graphene (EG) and silicon carbide (SiC). 2D-Ga becomes superconducting at 4 K; this elevation over bulk alpha-Ga (Tc~1 K) is primarily attributed to an increased density of states at the Fermi level as the incipient Ga-Ga dimerization seen in alpha-Ga is suppressed by epitaxy to SiC. We also demonstrate the importance of controlling SiC surface morphology (i.e. step height) and defect-engineering in graphene layers prior to intercalation to achieve large-area uniform 2D-Ga layers with isotropic transport properties. This work demonstrates that unique 2D forms of 3D materials can be stabilized at the EG/SiC interface, which represents a scalable route towards air-stable crystalline 2D superconductors as a potential foundation for next-generation quantum technologies.
Atomically Flat and Thermally Stable Graphene on Si(111) with Preserved Intrinsic Electronic Properties.

Xiaoxia Li,Bin Li,Xiaodong Fan,Laiming Wei,Lin Li,Ran Tao,Xiaoqiang Zhang,Hui Zhang,Qiang Zhang,Hongbin Zhu,Shengbai Zhang,Zhenyu Zhang,Changgan Zeng

DOI: https://doi.org/10.1039/c8nr02005a

IF: 6.7

2018-01-01

Nanoscale

Abstract:Silicon and graphene are two wonder materials, and their hybrid heterostructures are expected to be very interesting fundamentally and practically. In the present study, by adopting fast dry transfer and ultra-high vacuum annealing, atomically flat monolayer graphene is successfully prepared on the chemically active Si(111) substrate. More importantly, the graphene overlayer largely maintains its intrinsic electronic properties, as validated by the results of the energy-dependent electronic transparency, Dirac point observation and quantum coherence characteristics, and further confirmed by first-principles calculations. The intrinsic properties of graphene are retained up to 1030 K. The system of atomically flat and thermally stable graphene on a chemically active silicon surface with preserved inherent characteristics renders the graphene/silicon hybrid a promising system in the design of high-performance devices and the exploitation of interfacial topological quantum effects.
From regular arrays of liquid metal nano-islands to single crystalline biatomic-layer gallium film: Molecular dynamics and first principle study

Xin Zhang,Haojie Zhang,Zewen Zong,Zhan Li,Ximeng Chen

DOI: https://doi.org/10.1063/5.0063858

IF: 2.877

2021-09-28

Journal of Applied Physics

Abstract:The two-dimensional (2D) materials provide an excellent platform for the study of the dimensional effect. The richer the types of 2D materials, the broader the unknown field we can explore. However, among the large number of 2D materials manufactured by humans, true single-crystalline (SC) atomically thin 2D metals are rare. The instability of SC 2D metal materials puts high demands on its fabrication process. By implementing molecular dynamics (MD) simulations, we proved that the SC biatomic-layer (BL) gallium film can be formed at the interface between two graphene layers. The Ga atoms deposited on the surface of the graphene on the copper substrate will spontaneously evolve into independent liquid nano-islands, and then cover the nano-island with a monolayer graphene. When the Ga nano-islands confined under the graphene layer are heated to 500 °C, they will expand into a BL Ga film, and finally, the entire system is cooled to room temperature to obtain the SCBL Ga film. It is found that these nano-islands are in the liquid state at ∼400 °C, but they undergo a phase transition and evolve into the solid state at ∼500°C. At the same time, the nano-islands also drop from 3D to 2D. In addition, the vertical heterostructure with moiré superstructure is formed between the SCBL Ga and the top layer graphene. The calculations of the electronic properties show that the Dirac conical point of the graphene in the heterostructure is shifted below the Fermi level, which proves that SCBL Ga is able to induce semimetallic to metallic conversion in graphene, indicating SCBL Ga can be used for metal contacts in 2D devices.

physics, applied
Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy

Natalie Briggs,Brian Bersch,Yuanxi Wang,Jue Jiang,Roland J. Koch,Nadire Nayir,Ke Wang,Marek Kolmer,Wonhee Ko,Ana De La Fuente Duran,Shruti Subramanian,Chengye Dong,Jeffrey Shallenberger,Mingming Fu,Qiang Zou,Ya-Wen Chuang,Zheng Gai,An-Ping Li,Aaron Bostwick,Chris Jozwiak,Cui-Zu Chang,Eli Rotenberg,Jun Zhu,Adri C. T. van Duin,Vincent Crespi,Joshua A. Robinson

DOI: https://doi.org/10.1038/s41563-020-0631-x

IF: 41.2

2020-01-01

Nature Materials

Abstract:Atomically thin two-dimensional (2D) metals may be key ingredients in next-generation quantum and optoelectronic devices. However, 2D metals must be stabilized against environmental degradation and integrated into heterostructure devices at the wafer scale. The high-energy interface between silicon carbide and epitaxial graphene provides an intriguing framework for stabilizing a diverse range of 2D metals. Here we demonstrate large-area, environmentally stable, single-crystal 2D gallium, indium and tin that are stabilized at the interface of epitaxial graphene and silicon carbide. The 2D metals are covalently bonded to SiC below but present a non-bonded interface to the graphene overlayer; that is, they are ‘half van der Waals’ metals with strong internal gradients in bonding character. These non-centrosymmetric 2D metals offer compelling opportunities for superconducting devices, topological phenomena and advanced optoelectronic properties. For example, the reported 2D Ga is a superconductor that combines six strongly coupled Ga-derived electron pockets with a large nearly free-electron Fermi surface that closely approaches the Dirac points of the graphene overlayer.
Atomic-scale manipulation of buried graphene–silicon carbide interface by local electric field

Marek Kolmer,Joseph Hall,Shen Chen,Samuel Roberts,Zhe Fei,Yong Han,Michael C. Tringides

DOI: https://doi.org/10.1038/s42005-023-01515-3

2024-01-07

Communications Physics

Abstract:Precision of scanning tunneling microscopy (STM) enables control of matter at scales of single atoms. However, transition from atomic-scale manipulation strategies to practical devices encounters fundamental problems in protection of the designer structures formed atop the surface. In this context, STM manipulation of subsurface structures on technologically relevant materials is encouraging. Here, we propose a material platform and protocols for precise manipulation of a buried graphene interface. We show that an electric field from the STM tip reversibly controls breaking and restoring of covalent bonds between the graphene buffer layer and the SiC substrate. The process involves charge redistribution at the atomically sharp interface plane under the epitaxial graphene layer(s). This buried manipulation platform is laterally defined by unit cells from the corresponding (6×6) SiC moiré lattice of the epitaxial graphene. Local and reversible electric-field-induced patterning of graphene heterostructures from the bottom interface creates an alternative architecture concept for their applications.

physics, multidisciplinary
Ultra-high mobility semiconducting epitaxial graphene on silicon carbide

Jian Zhao,Peixun Ji,Yaqi Li,Rui Li,Kaiming Zhang,Hao Tian,Kaichen Yu,Boyue Bian,Luzhen Hao,Xue Xiao,Will Griffin,Noel Dudeck,Ramiro Moro,Lei Ma,Walt A. de Heer

2023-08-24

Abstract:Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band gap and a sufficient mobility. It is well known that by evaporating silicon from commercial electronics grade silicon carbide crystals an epitaxial graphene layer forms on the surfaces [2]. The first epigraphene layer to form on the silicon terminated face, known as the buffer layer, is insulating. It is chemically bonded to the SiC and spectroscopic measurements [3] have identified semiconducting signatures on the microscopic domains. However, the bonding to the SiC is disordered and the mobilities are small. Here we demonstrate a quasi-equilibrium annealing method that produces macroscopic atomically flat terraces covered with a well ordered epigraphene buffer layer that has a 0.6 eV bandgap. Room temperature mobilities exceed 5000 cm2/Vs which is much larger than silicon and 20 times larger than the phonon scattering imposed limit of current 2D semiconductors. Critical for nanotechnology, its lattice is aligned with the SiC substrate, it is chemically, mechanically, and thermally robust, and it can be conventionally patterned and seamlessly connected to semimetallic epigraphene making semiconducting epigraphene ideally suited for nanoelectronics.

Mesoscale and Nanoscale Physics
Effects of a Graphene Substrate on the Structure and Properties of Atomically Thin Metal Sheets.

Gang Zhou

DOI: https://doi.org/10.1039/c9cp05466a

2020-01-01

Abstract:The production and use of atomically thin metal sheets are desirable but challenging. Here, density functional theory calculations indicate that the introduction of graphene as a support can play an unexpected role in the stability and function of Rh monolayer, as a representative of single-layer metal nanosheets. The graphene stabilizes the otherwise unstable Rh monolayer by the substrate interaction that not only impedes the out-of-plane movement of the Rh atoms but also decreases the surface energy. The Rh/graphene bilayer has good mechanical properties, comparable to those of emerging 2D graphene-based materials. The interfacial stress from the substrate interaction causes surface corrugations to form on the bilayer, exhibiting a degree of consistency in the direction and the area. Discrete magnetic units, compatible with the substrate interaction, are present in the corrugated Rh sheet. The visible magnetic anisotropy and spin-splitting of polarized carrier states of the corrugated Rh sheet dominate the spin-dependent transport in the bilayer film, which can be used as a building block for ultrathin electronic/spintronic devices.
Stabilizing an atomically thin quantum spin Hall insulator at ambient conditions: Graphene-intercalation of indenene

Cedric Schmitt,Jonas Erhardt,Philipp Eck,Matthias Schmitt,Kyungchan Lee,Tim Wagner,Philipp Keßler,Martin Kamp,Timur Kim,Cephise Cacho,Tien-Lin Lee,Giorgio Sangiovanni,Simon Moser,Ralph Claessen

DOI: https://doi.org/10.1038/s41467-024-45816-9

2023-05-13

Abstract:Atomic monolayers on semiconductor surfaces represent a new class of functional quantum materials at the ultimate two-dimensional limit, ranging from superconductors [1, 2] to Mott insulators [3, 4] and ferroelectrics [5] to quantum spin Hall insulators (QSHI) [6, 7]. A case in point is the recently discovered QSHI indenene [7, 8], a triangular monolayer of indium epitaxially grown on SiC(0001), exhibiting a $\sim$120meV gap and substrate-matched monodomain growth on the technologically relevant $\mu$m scale [9]. Its suitability for room-temperature spintronics is countered, however, by the instability of pristine indenene in air, which destroys the system along with its topological character, nullifying hopes of ex-situ processing and device fabrication. Here we show how indenene intercalation into epitaxial graphene offers effective protection from the oxidizing environment, while it leaves the topological character fully intact. This opens an unprecedented realm of ex-situ experimental opportunities, bringing this monolayer QSHI within realistic reach of actual device fabrication and edge channel transport.

Materials Science
Achieving environmental stability in an atomically thin quantum spin Hall insulator via graphene intercalation

Cedric Schmitt,Jonas Erhardt,Philipp Eck,Matthias Schmitt,Kyungchan Lee,Philipp Keßler,Tim Wagner,Merit Spring,Bing Liu,Stefan Enzner,Martin Kamp,Vedran Jovic,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Timur Kim,Cephise Cacho,Tien-Lin Lee,Giorgio Sangiovanni,Simon Moser,Ralph Claessen

DOI: https://doi.org/10.1038/s41467-024-45816-9

IF: 16.6

2024-02-20

Nature Communications

Abstract:Atomic monolayers on semiconductor surfaces represent an emerging class of functional quantum materials in the two-dimensional limit — ranging from superconductors and Mott insulators to ferroelectrics and quantum spin Hall insulators. Indenene, a triangular monolayer of indium with a gap of ~ 120 meV is a quantum spin Hall insulator whose micron-scale epitaxial growth on SiC(0001) makes it technologically relevant. However, its suitability for room-temperature spintronics is challenged by the instability of its topological character in air. It is imperative to develop a strategy to protect the topological nature of indenene during ex situ processing and device fabrication. Here we show that intercalation of indenene into epitaxial graphene provides effective protection from the oxidising environment, while preserving an intact topological character. Our approach opens a rich realm of ex situ experimental opportunities, priming monolayer quantum spin Hall insulators for realistic device fabrication and access to topologically protected edge channels.

multidisciplinary sciences
Stabilized silicene within bilayer graphene: A proposal based on molecular dynamics and density-functional tight-binding calculations

G. R. Berdiyorov,M. Neek-Amal,F. M. Peeters,Adri C. T. van Duin

DOI: https://doi.org/10.1103/physrevb.89.024107

IF: 3.7

2014-01-22

Physical Review B

Abstract:Freestanding silicene is predicted to display comparable electronic properties as graphene. However, the yet synthesized silicenelike structures have been only realized on different substrates which turned out to exhibit versatile crystallographic structures that are very different from the theoretically predicted buckled phase of freestanding silicene. This calls for a different approach where silicene is stabilized using very weakly interacting surfaces. We propose here a route by using graphene bilayer as a scaffold. The confinement between the flat graphene layers results in a planar clustering of Si atoms with small buckling, which is energetically unfavorable in vacuum. Buckled hexagonal arrangement of Si atoms similar to freestanding silicene is observed for large clusters, which, in contrast to Si atoms on metallic surfaces, is only very weakly van der Waals coupled to the graphene layers. These clusters are found to be stable well above room temperature. Our findings, which are supported by density-functional tight-binding calculations, show that intercalating bilayer graphene with Si is a favorable route to realize silicene.

physics, condensed matter, applied,materials science, multidisciplinary
The Possibility of Chemically Inert, Graphene-Based All-Carbon Electronic Devices with 0.8 Ev Gap

Jing Shan Qi,Jian Yu Huang,Ji Feng,Da Ning Shi,Ju Li

DOI: https://doi.org/10.1021/nn102322s

IF: 17.1

2011-01-01

ACS Nano

Abstract:Graphene is an interesting electronic material. However, flat monolayer graphene does not have significant gap in the electronic density of states, required for a large on-off ratio in logic applications. We propose here a novel device architecture, composed of self-folded carbon nanotube-graphene hybrids, which have been recently observed experimentally in Joule-heated graphene. These experiments demonstrated the feasibility of cutting, folding, and welding few-layer graphene in situ to form all-carbon nanostructures with complex topologies. The electronic gap of self-folded nanotubes can be combined with the semimetallicity of graphene electrodes to form a "metal-semiconductor-metal" junction. By ab initio calculations we demonstrate large energy gaps in the transmission spectra of such junctions, which preserve the intrinsic transport characteristics of the semiconducting nanotubes despite topologically necessary disinclinations at the flat graphene-curved nanotube interface. These all-carbon devices are proposed to be constructed by contact probe cutting and high-temperature annealing and, if produced, would be chemically stable at room temperature under normal gas environments.
Stability limits of elemental 2D metals in graphene pores

Janne Nevalaita,Pekka Koskinen

DOI: https://doi.org/10.1039/C9NR08533E

2019-11-19

Abstract:Two-dimensional (2D) materials can be used as stabilizing templates for exotic nanostructures, including pore-stabilized, free-standing patches of elemental metal monolayers. Although these patches represent metal clusters under extreme conditions and are thus bound for investigations, they are poorly understood as their energetic stability trends and the most promising elements remain unknown. Here, using density-functional theory simulations and liquid drop model to explore the properties of 45 elemental metal candidates, we identify metals that enable the largest and most stable patches. Simulations show that pores can stabilize patches up to $\sim 8$ nm$^2$ areas and that the most prominent candidate in a graphene template is Cu. The results, which are generalizable to templates also beyond graphene, provide encouragement for further, even more resolute experimental pursuit of 2D metals.

Mesoscale and Nanoscale Physics
Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/Siox by Chemical Vapor Deposition

Jinbo Pang,Rafael G. Mendes,Pawel S. Wrobel,Michal D. Wlodarski,Huy Quang Ta,Liang Zhao,Lars Giebeler,Barbara Trzebicka,Thomas Gemming,Lei Fu,Zhongfan Liu,Juergen Eckert,Alicja Bachmatiuk,Mark H. Ruemmeli

DOI: https://doi.org/10.1021/acsnano.6b08069

IF: 17.1

2017-01-01

ACS Nano

Abstract:To synthesize graphene by chemical vapor deposition (CVD) both in large area and with uniform layer number directly over Si/SiOx has proven challenging. The use of catalytically active metal substrates, in particular Cu, has shown far greater success and therefore is popular. That said, for electronics applications it requires a transfer procedure, which tends to damage and contaminate the graphene. Thus, the direct fabrication of uniform graphene on Si/SiOx remains attractive. Here we show a facile confinement CVD approach in which we simply “sandwich” two Si wafers with their oxide faces in contact to form uniform monolayer graphene. A thorough examination of the material reveals it comprises faceted grains despite initially nucleating as round islands. Upon clustering, they facet to minimize their energy. This behavior leads to faceting in polygons, as the system aims to ideally form hexagons, the lowest energy form, much like the hexagonal cells in a beehive, which requires the minimum wax. This process also leads to a near minimal total grain boundary length per unit area. This fact, along with the high graphene quality, is reflected in its electrical performance, which is highly comparable with graphene formed over other substrates, including Cu. In addition, the graphene growth is self-terminating. Our CVD approach is easily scalable and will make graphene formation directly on Si wafers competitive against that from metal substrates, which suffer from transfer. Moreover, this CVD route should be applicable for the direct synthesis of other 2D materials and their van der Waals heterostructures.
Atomic mechanism of strong interactions at the graphene/sapphire interface

Zhipeng Dou,Zhaolong Chen,Ning Li,Shenyuan Yang,Zhiwei Yu,Yuanwei Sun,Yuehui Li,Bingyao Liu,Qiang Luo,Tianbao Ma,Lei Liao,Zhongfan Liu,Peng Gao

DOI: https://doi.org/10.1038/s41467-019-13023-6

IF: 16.6

2019-11-01

Nature Communications

Abstract:Abstract For atomically thin two-dimensional materials, interfacial effects may dominate the entire response of devices, because most of the atoms are in the interface/surface. Graphene/sapphire has great application in electronic devices and semiconductor thin-film growth, but the nature of this interface is largely unknown. Here we find that the sapphire surface has a strong interaction with some of the carbon atoms in graphene to form a C-O-Al configuration, indicating that the interface interaction is no longer a simple van der Waals interaction. In addition, the structural relaxation of sapphire near the interface is significantly suppressed and very different from that of a bare sapphire surface. Such an interfacial C-O-Al bond is formed during graphene growth at high temperature. Our study provides valuable insights into understanding the electronic structures of graphene on sapphire and remote control of epitaxy growth of thin films by using a graphene–sapphire substrate.

multidisciplinary sciences
Toward Direct Growth of Ultra‐Flat Graphene

Bei Jiang,Dongdong Liang,Zhongti Sun,Haina Ci,Bingzhi Liu,Yaqi Gao,Jingyuan Shan,Xiaoqin Yang,Mark H. Rümmeli,Junxi Wang,Tongbo Wei,Jingyu Sun,Zhongfan Liu

DOI: https://doi.org/10.1002/adfm.202200428

IF: 19

2022-04-10

Advanced Functional Materials

Abstract:Direct growth of wafer‐level, ultra‐flat graphene without any wrinkles and metallic impurities is implemented on quartz via inhibition of textured SiOx seed, identification of critical temperature regime, and in‐situ flattening of substrate surface.The elimination of wrinkles has become a research hotspot in the realm of the chemical vapor deposition growth of graphene, and there have been reliable routes developed for the scenario of catalytic synthesis on metals. Nonetheless, the transfer‐free growth of graphene over insulating substrates affording ultra‐flatness remains a puzzle. Here, the authors report the direct preparation of ultra‐flat graphene on an economical quartz glass substrate at a wafer level, without any wrinkles and metallic impurities, is reported. Density functional theory calculations are employed to establish that graphene adlayer is prone to generate in the presence of textured particulates. In parallel, a critical temperature regime (1443–1453 K), is identified within which graphene adlayer‐restrained forming and substrate in‐situ flattening could simultaneously occur. The thus‐obtained graphene enables the atomically smooth growth of a GaN film with (001) single‐crystallinity over the amorphous substrate. This technique is particularly attractive in the context of cost‐effective integration of emerging III‐nitrides toward exciting applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Surface charge-transfer doping a quantum-confined silver monolayer beneath epitaxial graphene

Philipp Rosenzweig,Hrag Karakachian,Dmitry Marchenko,Ulrich Starke

DOI: https://doi.org/10.1103/PhysRevB.105.235428

2022-06-23

Abstract:Recently the graphene-SiC interface has emerged as a versatile platform for the epitaxy of otherwise unstable, monoelemental, two-dimensional (2D) layers via intercalation. Intrinsically capped into a van der Waals heterostructure with overhead graphene, they compose a new class of quantum materials with striking properties contrasting their parent bulk crystals. Intercalated silver presents a prototypical example where 2D quantum confinement and inversion symmetry breaking entail a metal-to-semiconductor transition. However, little is known about the associated unoccupied states, and control of the Fermi-level position across the band gap would be desirable. Here, we n -type dope a graphene/2D-Ag/SiC heterostack via in situ potassium deposition and probe its band structure by means of synchrotron-based angle-resolved photoelectron spectroscopy. While the induced carrier densities on the order of 1014cm−2 are not yet sufficient to reach the onset of the silver conduction band, the band alignment of graphene changes relative to the rigidly shifting Ag valence band and substrate core levels. We further demonstrate an ordered potassium adlayer ( 2×2 relative to graphene) with free-electron-like dispersion, suppressing plasmaron quasiparticles in graphene via enhanced metallization of the heterostack. Our results establish surface charge-transfer doping as an efficient handle to modify band alignment and electronic properties of a van der Waals heterostructure assembled from graphene and a novel type of monolayered quantum material. https://doi.org/10.1103/PhysRevB.105.235428 Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Open access publication funded by the Max Planck Society. Published by the American Physical Society
Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

Junzhu Li,Mingguang Chen,Abdus Samad,Haocong Dong,Avijeet Ray,Junwei Zhang,Xiaochuan Jiang,Udo Schwingenschlögl,Jari Domke,Cailing Chen,Yu Han,Torsten Fritz,Rodney S. Ruoff,Bo Tian,Xixiang Zhang

DOI: https://doi.org/10.1038/s41563-021-01174-1

IF: 41.2

2022-01-20

Nature Materials

Abstract:The growth of inch-scale high-quality graphene on insulating substrates is desirable for electronic and optoelectronic applications, but remains challenging due to the lack of metal catalysis. Here we demonstrate the wafer-scale synthesis of adlayer-free ultra-flat single-crystal monolayer graphene on sapphire substrates. We converted polycrystalline Cu foil placed on Al2O3(0001) into single-crystal Cu(111) film via annealing, and then achieved epitaxial growth of graphene at the interface between Cu(111) and Al2O3(0001) by multi-cycle plasma etching-assisted–chemical vapour deposition. Immersion in liquid nitrogen followed by rapid heating causes the Cu(111) film to bulge and peel off easily, while the graphene film remains on the sapphire substrate without degradation. Field-effect transistors fabricated on as-grown graphene exhibited good electronic transport properties with high carrier mobilities. This work breaks a bottleneck of synthesizing wafer-scale single-crystal monolayer graphene on insulating substrates and could contribute to next-generation graphene-based nanodevices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Flat Boron: A New Cousin of Graphene

Sheng‐Yi Xie,Yeliang Wang,Xian‐Bin Li

DOI: https://doi.org/10.1002/adma.201900392

IF: 29.4

2019-06-17

Advanced Materials

Abstract:<p>The mechanical exfoliation of graphene from graphite provides the cornerstone for the synthesis of other 2D materials with layered bulk structures, such as hexagonal boron nitride, transition metal dichalcogenides, black phosphorus, and so on. However, the experimental production of 2D flat boron is challenging because bulk boron has very complex spatial structures and a rich variety of chemical properties. Therefore, the realization of 2D flat boron marks a milestone for the synthesis of 2D materials without layered bulk structures. The historical efforts in this field, particularly the most recent experimental progress, such as the growth of 2D flat boron on a metal substrate by chemical vapor deposition and molecular beam epitaxy, or liquid exfoliation from bulk boron, are described.</p>

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation

Xin Gao,Liming Zheng,Fang Luo,Jun Qian,Jingyue Wang,Mingzhi Yan,Wendong Wang,Qinci Wu,Junchuan Tang,Yisen Cao,Congwei Tan,Jilin Tang,Mengjian Zhu,Yani Wang,Yanglizhi Li,Luzhao Sun,Guanghui Gao,Jianbo Yin,Li Lin,Zhongfan Liu,Shiqiao Qin,Hailin Peng

DOI: https://doi.org/10.1038/s41467-022-33135-w

IF: 16.6

2022-09-15

Nature Communications

Abstract:Abstract The integration of large-scale two-dimensional (2D) materials onto semiconductor wafers is highly desirable for advanced electronic devices, but challenges such as transfer-related crack, contamination, wrinkle and doping remain. Here, we developed a generic method by gradient surface energy modulation, leading to a reliable adhesion and release of graphene onto target wafers. The as-obtained wafer-scale graphene exhibited a damage-free, clean, and ultra-flat surface with negligible doping, resulting in uniform sheet resistance with only ~6% deviation. The as-transferred graphene on SiO 2 /Si exhibited high carrier mobility reaching up ~10,000 cm 2 V −1 s −1 , with quantum Hall effect (QHE) observed at room temperature. Fractional quantum Hall effect (FQHE) appeared at 1.7 K after encapsulation by h-BN, yielding ultra-high mobility of ~280,000 cm 2 V −1 s −1 . Integrated wafer-scale graphene thermal emitters exhibited significant broadband emission in near-infrared (NIR) spectrum. Overall, the proposed methodology is promising for future integration of wafer-scale 2D materials in advanced electronics and optoelectronics.

multidisciplinary sciences
Ultraflat Single-Crystal Hexagonal Boron Nitride for Wafer-Scale Integration of a 2D-Compatible High-Κ Metal Gate

Yani Wang,Chao Zhao,Xin Gao,Liming Zheng,Jun Qian,Xiaoyin Gao,Jiade Li,Junchuan Tang,Congwei Tan,Jiahao Wang,Xuetao Zhu,Jiandong Guo,Zhongfan Liu,Feng Ding,Hailin Peng

DOI: https://doi.org/10.1038/s41563-024-01968-z

IF: 41.2

2024-01-01

Nature Materials

Abstract:Hexagonal boron nitride (hBN) has emerged as a promising protection layer for dielectric integration in the next-generation large-scale integrated electronics. Although numerous efforts have been devoted to growing single-crystal hBN film, wafer-scale ultraflat hBN has still not been achieved. Here, we report the epitaxial growth of 4 in. ultraflat single-crystal hBN on Cu0.8Ni0.2(111)/sapphire wafers. The strong coupling between hBN and Cu0.8Ni0.2(111) suppresses the formation of wrinkles and ensures the seamless stitching of parallelly aligned hBN domains, resulting in an ultraflat single-crystal hBN film on a wafer scale. Using the ultraflat hBN as a protective layer, we integrate the wafer-scale ultrathin high-kappa dielectrics onto two-dimensional (2D) materials with a damage-free interface. The obtained hBN/HfO2 composite dielectric exhibits an ultralow current leakage (2.36 x 10(-6) A cm(-2)) and an ultrathin equivalent oxide thickness of 0.52 nm, which meets the targets of the International Roadmap for Devices and Systems. Our findings pave the way to the synthesis of ultraflat 2D materials and integration of future 2D electronics.

Flat and safe under the graphene sheet

An Air-Stable and Atomically Thin Graphene/Gallium Superconducting Heterostructure

Atomically Flat and Thermally Stable Graphene on Si(111) with Preserved Intrinsic Electronic Properties.

From regular arrays of liquid metal nano-islands to single crystalline biatomic-layer gallium film: Molecular dynamics and first principle study

Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy

Atomic-scale manipulation of buried graphene–silicon carbide interface by local electric field

Ultra-high mobility semiconducting epitaxial graphene on silicon carbide

Effects of a Graphene Substrate on the Structure and Properties of Atomically Thin Metal Sheets.

Stabilizing an atomically thin quantum spin Hall insulator at ambient conditions: Graphene-intercalation of indenene

Achieving environmental stability in an atomically thin quantum spin Hall insulator via graphene intercalation

Stabilized silicene within bilayer graphene: A proposal based on molecular dynamics and density-functional tight-binding calculations

The Possibility of Chemically Inert, Graphene-Based All-Carbon Electronic Devices with 0.8 Ev Gap

Stability limits of elemental 2D metals in graphene pores

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/Siox by Chemical Vapor Deposition

Atomic mechanism of strong interactions at the graphene/sapphire interface

Toward Direct Growth of Ultra‐Flat Graphene

Surface charge-transfer doping a quantum-confined silver monolayer beneath epitaxial graphene

Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

Flat Boron: A New Cousin of Graphene

Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation

Ultraflat Single-Crystal Hexagonal Boron Nitride for Wafer-Scale Integration of a 2D-Compatible High-Κ Metal Gate