Influence of the electric field and annealing temperature on flash-sintered (Mg1/3Nb2/3)0.05Ti0.95O2 ceramics

Hua Man,Xi Wang,Changjin Liu,Zhentao Wang,Liang Zhang,Chunxia Zhang,Dong Xu

DOI: https://doi.org/10.1007/s10854-024-12656-8

2024-04-30

Journal of Materials Science Materials in Electronics

Abstract:(Mg, Nb) co-doped TiO 2 colossal dielectric ceramics were successfully prepared at 1200 °C for 24 min. The effects of different electric field on phase structure, microstructure and dielectric properties have been systematically studied. All the flash sintered samples were pure rutile TiO 2 structure, and no second phase was produced. With the increase of electric field, the dielectric constant (at 1 kHz) firstly increases and then decreases. When the electric field is 550 V/cm, the dielectric properties (ε′ ≈ 6.0 × 10 5 , tanδ ≈ 0.73) of the ceramic sample are the best. Flash sintered samples were annealed at different temperatures (800–1000 °C) in order to reduce dielectric loss. As the annealing temperature increases, the dielectric constant decreases gradually. When the annealing temperature is 800 °C, the dielectric constant of the ceramic sample is about 7.1 × 10 4 and the dielectric loss is about 0.37 (twice reduced) at 1 kHz. Impedance spectroscopy (IS) data indicated that ceramics consist of semi-conductive grains and insulated grain boundaries. This good dielectric property was attributed to the internal barrier layer capacitance (IBLC) effect.

materials science, multidisciplinary,engineering, electrical & electronic,physics, applied, condensed matter