Abstract:The recent development of the 5th-generation (5G) communication sytems has set increasingly strict requirements on the spectral purity of millimeter-wave (mm-wave) local oscillators (LO). Low phase noise is crucial to enable advanced modulation formats for high communication data-rates. Much effort has been made to improve the phase noise performance of the mm-wave LOs. A lower frequency voltage-controlled oscillator (VCO) together with a frequency multiplier can lower the phase noise [1]; however, the high-order harmonic components in VCOs are usually very weak, which requires additional power-consuming mm-wave amplification stages to satisfy the LO swing requirement. For single mm-wave fundamental VCOs, the minimal achievable phase noise is bounded by the smallest realizable inductor that displays a high Q factor. To avoid the “small inductor” problem, N oscillators with relatively large inductors can be coupled together to improve the phase noise by $10\\log _{10}(\\mathrm{N})[2 -5]$. Authors in [2] presented a quad-core bipolar VCO working around 15GHz as shown in Fig. 20.3.1 (Left), where four one-turn inductors are star-connected with the active cores placed in the middle. Resistors (Rc) are added to avoid undesired multi-tone concurrent oscillations. However, the four one-turn inductors still suffer from the Q-factor drop when the inductance decreases, thus limiting the highest achievable oscillation frequency. Besides, $\\mathrm{V}_{DD}$ at the inductor central taps and $\\mathrm{V}_{SS}$ at the tail current source are far from each other, making the $\\mathrm{V}_{DD}- \\mathrm{V}_{SS}$ current return path long. This path has to be carefully modeled in simulations, especially in the mm-wave frequency range, where the return path inductance is comparable to the tank inductance. Instead of the star-connected topology, authors in [3] presented a circular-connected quad-core VCO working close to 30GHz, where the inductors are arranged in a circular topology as shown in Fig. 20.3.1 (Middle). The destructive coupling between the inner edges inside a small inductor is eliminated. Therefore, the minimal realizable inductance is further reduced while keeping a high Q factor. The central taps are connected by narrow metal traces to avoid latching and mode ambiguity. The VCO adopts a CMOS configuration, which limits the highest operating frequency. It would be difficult for this topology to be adopted in NMOS-only VCOs because the central taps have to be resistively isolated to suppress unwanted modes; therefore, they cannot be connected to the AC-ground power supply simultaneously as required by the NMOS-only configuration. Due to the lack of harmonic impedance control in the circular inductors, extra tail filtering transformers are added to improve the phase noise.

A Wideband Mode-Switching Quad-Core VCO Using Compact Multi-Mode Magnetically Coupled LC Network

A 1.8-V 6/9-GHz switchable dual-band quadrature LC VCO in SiGe BiCMOS technology

A 1.8-V 6/9-Ghz Reconfigurable Dual-Band Quadrature LC VCO in SiGe BiCMOS Technology

A Wide Tuning Range Dual-Core Quad-Mode Orthogonal-Coupled VCO With Concurrently Dual-Output Using Parallel 8-Shaped Resonator

A Low Phase Noise VCO with Placement Reordered Cores and High-Q Bond Wire Array Inductors

A Compact Square-Geometry Quad-Core 19 GHz Class-F VCO with Parallel Inductor-sharing Technique achieving -137.2 dBc/Hz Phase Noise at 10MHz Offset

A 2-D Mode-Switching Quad-Core Oscillator Using E-M Mixed-Coupling Resonance Boosting

19.5 A 13.7-to-41.5GHz 214.1dBc/Hz FoM<inf>T</inf> Quad-Core Quad-Mode VCO Using an Oscillation-Mode-Splitting Technique

A 47.6–71.0-GHz 65-nm CMOS VCO Based on Magnetically Coupled -Type LC Network

An 18.5-to-36.5 GHz 206.8 Dbc/hz FoMT Quad-Core Triple-Mode VCO with Automatic-Mode-Tracking Output Buffers

A Two-Story Quad-Core Dual-Mode VCO in 65-Nm CMOS

A 4.5-to-13.5-ghz Single-Transformer Quad-Mode VCO with 202.5-Dbc/hz FoM $_{\Mathrm{t}}$

A Low-Phase-Noise Quad-Core Millimeter-Wave Fundamental VCO Using Circular Triple-Coupled Transformer in 65-Nm CMOS

A 4.4-Ghz 193.2-Db FoM 8-Shaped-inductor Based LC-VCO Using Orthogonal-Coupled Triple-Coil Transformer

A 31–46 GHz Dual-Core Class-C VCO Using Switchable Transformers in 28-Nm CMOS

A 5 to 11.1 GHz Quad-Core Quad-Mode Octave Tuning-Range CMOS LC VCO

A 12.9-to-24 GHz Dual-Mode Multi-Coil VCO Achieving 199.2 Dbc/hz Peak FoMT in 65-Nm CMOS

A 60GHz 186.5dBc/Hz FoM Quad-Core Fundamental VCO Using Circular Triple-Coupled Transformer with No Mode Ambiguity in 65nm CMOS

A 2.9-to-7.2 GHz Dual-Core Quad-Mode VCO Achieving 206.5dbc/hz FoMT in 55nm CMOS

A 12.5-to-15.4ghz, -118.9Dbc/hz PN at 1mhz Offset, and 191.0dbc/hz FoM VCO with Common-Mode Resonance Expansion and Simultaneous Differential 2Nd-Harmonic Output Using a Single Three-Coil Transformer in 65nm CMOS.

20.3 A 60GHz 186.5dBc/Hz FoM Quad-Core Fundamental VCO Using Circular Triple-Coupled Transformer with No Mode Ambiguity in 65nm CMOS