Abstract:Due to the large thermal and lattice mismatch between gallium oxide (Ga2O3) and diamond, the resulting residual stress brings high defect densities and susceptibility to cracking on the Ga2O3 epilayer. To balance the stress-strain behavior and eliminate the dislocation defects, this study employed diamond composite substrates which consist of a pre-grown AlN strain interlayer on the surface of the bulk diamond to heteroepitaxy Ga2O3 nanomembranes via pulsed laser deposition (PLD). To achieve an optimal solution of high-quality Ga2O3 thin films, several comparative investigations were proposed and gave a preliminary exploration. Subsequently, spectroscopic ellipsometry (SE), high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS), were performed to characterize the physical, chemical, and optical properties. A comprehensive analysis was conducted on the quality of Ga2O3 thin films dependent on the growth processes including oxygen pressure, in-situ annealing treatment, and the “two-step” growth. It demonstrated that high oxygen pressure significantly increased the growth rate of Ga2O3 (∼ 2 times), slightly improved crystallinity and surface morphology (RMS decreased ∼ 2.2 nm), and reduced oxygen vacancy defects (∼ 3%). The additional in-situ annealing process and the “two-step” growth method also brought a bit of thickness increase (∼ 28 nm and ∼ 14 nm, respectively). By in-situ annealing in various stages, 2D and 3D growth modes competition caused Ga2O3 thin films' continuous grain growth and fewer oxygen vacancy defects but presented different variations of surface morphology. On the whole, the “two-step” growth enhancement scheme proves the largest effect on Ga2O3's quality among the designed sets of experiments. Exploring various optimization schemes and proposing a highly reliable growth technology route is of great significance to give impetus to Ga2O3 application in the electric power field. Consequently, for further insight, continuous work will be propelled in the future.

Effects of porosity on the structural and optoelectronic properties of Er-doped Ga2O3 epitaxial films on etched epi-GaN/sapphire substrates

Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an example

Effects of Oxygen Vacancies on the Optical and Electrical Performances of Silicon-Based Er Doped Ga2O3 Films

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Eu-doped Lu2O3 epitaxial films with an embedded nanoporous GaN distributed Bragg reflectors

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Atomic Layer Deposition and Electroluminescence of Er-Doped Polycrystalline Lu 3 Ga 5 O 12 Nanofilms for Silicon-Based Optoelectronics

Structural Characterization of Epitaxial Lateral Overgrowth GaN by MOCVD

Fabrication and Optical Properties of Transferable Three-Dimensional GaP Nanopore Array Film by Electrochemical Exfoliated Method

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Study of β-Ga2O3 films hetero-epitaxially grown on off-angled sapphire substrates by halide vapor phase epitaxy

Preparation of Controllable Double-Selective Etched Porous Substrate for HVPE Growth of GaN Crystals with Excellent Optical Properties

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Optimization of Heteroepitaxial Gallium Oxide Thin Films on Diamond Composite Substrates using Pulsed Laser Deposition Method

Optical Properties Evolution of GaN Film Grown Via Lateral Epitaxial Overgrowth

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

Non-equilibrium epitaxy of metastable polymorphs of ultrawide-bandgap gallium oxide

Luminescence Studies of Er:Ga2O3 Films: Effect of Growth and Annealing Temperatures and Oxygen Pressures

Study on the effects of Si-doping in molecular beam heteroepitaxial β-Ga2O3 films

Structural and Optical Properties of Β-Ga2o3 Thin Films on Sapphire