Abstract:Stacking atomically thin films enables artificial construction of van der Waals heterostructures with exotic functionalities such as superconductivity, the quantum Hall effect, and engineered light-matter interactions. In particular, heterobilayers composed of monolayer transition metal dichalcogenides have attracted significant interest due to their controllable interlayer coupling and trapped valley excitons in moire superlattices. However, the identification of twist-angle-modulated optical transitions in heterobilayers is sometimes controversial since both momentum-direct (K-K) and -indirect excitons reside on the low energy side of the bright exciton in the monolayer constituents. Here, we attribute the optical transition at similar to 1.35 eV in the WS2/WSe2 heterobilayer to an indirect Gamma-K transition based on a systematic analysis and comparison of experimental photoluminescence spectra with theoretical calculations. The exciton wavefunction obtained by the state-of-the-art GW-Bethe-Salpeter equation approach indicates that both the electron and hole of the excitons are contributed by the WS2 layer. Polarization-resolved k-space imaging further confirms that the transition dipole moment of this optical transition is dominantly in-plane and is independent of the twist angle. The calculated absorption spectrum predicts that the so-called interlayer exciton peak coming from the K-K transition is located at 1.06 eV, but with a much weaker amplitude. Our work provides new insight into the steady-state and dynamic properties of twist-angle-dependent excitons in van der Waals heterostructures. The twist-angle-modulated excitons in vertically stacked WS2/WSe2 heterobilayers are proven to be an indirect G-K intralayer transition, with a nearly in-plane transition dipole moment.

Transient absorption measurements of interlayer charge transfer in a WS 2 /GeS van der Waals heterostructure

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Ultrafast charge transfer and carrier dynamics in a WS 2 /MoSe 2 few-layer van der Waals heterostructure

Interfacial Effect on the Transient Dielectric Function and Charge Transfer in a Monolayer WS 2 /Si Heterojunction

Identification of twist-angle-dependent excitons in WS<sub>2</sub>/WSe<sub>2</sub> heterobilayers

Observation of Hole Transfer in MoS 2 /WS 2 Van der Waals Heterostructures

Charge Transfer Effects in Naturally Occurring van der Waals Heterostructures (PbSe)_{1.16}(TiSe_{2})_{m} (m=1, 2).

Probing the interlayer excitation dynamics in WS2/WSe2 heterostructures with broadly tunable pump and probe energies

Link between interlayer hybridization and ultrafast charge transfer in WS$_2$-graphene heterostructures

Investigation of weak interlayer coupling in 2D layered GeS2 from theory to experiment

Ultrafast carriers' separation imaging in WS2-WSe2 in plane heterojunction by transient reflectivity microscopy

Ultrafast Charge Transfer in Graphene-Ws2 Van Der Waals Heterostructures

Charge transfer between the epitaxial monolayer WSe2 films and graphene substrates

Distinguishing Ultrafast Energy Transfer in Atomically Thin MoS2/WS2 Heterostructures

Ultrafast Interlayer Charge Transfer Outcompeting Intralayer Valley Relaxation in Few-Layer 2D Heterostructures

Distance dependence of the energy transfer mechanism in WS$_2$-graphene heterostructures

Interlayer Exciton in Multilayer-Monolayer Van Der Waals Heterostructures

Charge transfer between the epitaxial monolayer WSe 2 films and graphene substrates

Ultrafast Interlayer Electron Transfer in Incommensurate Transition Metal Dichalcogenide Homobilayers.

Observation of ultrafast interfacial Meitner-Auger energy transfer in a van der Waals heterostructure

Electrically-tunable non-radiative lifetime in WS2/WSe2 heterostructure