Distance dependence of the energy transfer mechanism in WS$_2$-graphene heterostructures

David Tebbe,Marc Schütte,K. Watanabe,T. Taniguchi,Christoph Stampfer,Bernd Beschoten,Lutz Waldecker
DOI: https://doi.org/10.1103/PhysRevLett.132.196902
2024-06-12
Abstract:We report on the mechanism of energy transfer in van der Waals heterostructures of the two-dimensional semiconductor WS$_2$ and graphene with varying interlayer distances, achieved through spacer layers of hexagonal boron nitride (hBN). We record photoluminescence and reflection spectra at interlayer distances between 0.5 nm and 5.8 nm (0-16 hBN layers). We find that the energy transfer is dominated by states outside the light cone, indicative of a Förster transfer process, with an additional contribution from a Dexter process at 0.5 nm interlayer distance. We find that the measured dependence of the luminescence intensity on interlayer distances above 1 nm can be quantitatively described using recently reported values of the Förster transfer rates of thermalized charge carriers. At smaller interlayer distances, the experimentally observed transfer rates exceed the predictions and furthermore depend on excess energy as well as on excitation density. Since the transfer probability of the Förster mechanism depends on the momentum of electron-hole pairs, we conclude that at these distances, the transfer is driven by non-thermalized charge carrier distributions.
Mesoscale and Nanoscale Physics,Materials Science
What problem does this paper attempt to address?
This paper mainly discusses the mechanism of energy transfer in the heterostructures of 2D semiconductor WS2 and graphene, especially the energy transfer characteristics as the thickness of the interlayer (hexagonal boron nitride hBN) between them changes. The study investigated the energy transfer in the interlayer thickness ranging from 0.5 nanometers to 5.8 nanometers (0-16 layers of hBN) through photoluminescence (PL) and reflectance spectroscopy measurements. The experiment found that when the interlayer is thick (greater than 1 nanometer), energy transfer is mainly dominated by the Förster mechanism, which is dipole-dipole interaction mediated by virtual photons. However, under the 0.5 nanometer interlayer, in addition to the Förster mechanism, there is also a contribution from the Dexter process, where independent electron and hole transfers occur due to wave function overlap. However, the experiment observed transfer rates that exceeded theoretical predictions in interlayers smaller than 1 nanometer and depended on excess energy and excitation density. The authors further revealed the energy transfer driven by non-equilibrium carrier distribution by analyzing the variation of photoluminescence intensity with interlayer thickness and the transient electron momentum distribution under different excitation conditions. In smaller interlayers, the transfer probability of the Förster mechanism increases due to non-zero momentum of electron-hole pairs, leading to enhanced energy transfer. In addition, the study also found that although the transfer rate predicted by the Förster theory inversely scales with the fourth power of the interlayer distance, at close contact, experimental data indicates that non-thermalized carrier dynamics may significantly influence energy transfer efficiency. At higher excitation densities, the energy transfer rate may change due to interactions, which can be observed as different results in time-resolved experiments. In conclusion, this paper experimentally reveals the microscale origin of energy transfer in WS2-graphene heterostructures, especially the dominant mechanisms at different distances, providing a foundation for the development of applications such as optical detectors and solar cells based on these materials.