Abstract:GaN-based micro-light-emitting diodes (micro-LEDs) are critical for lighting and display applications due to their high efficiency and stability. However, it has been a challenge to alleviate the reduction of the external quantum effect (EQE) of micro-LEDs with a decreasing size. This is attributed to an increase in the Shockley-Read-Hall (SRH) nonradiative recombination rate of the sidewall. Due to the size effects, it is more difficult to prepare efficient micro-LEDs with decreasing mesa size. In this work, micro-LED epi-wafers with InGaN quantum dots (QDs) as active layer materials were grown by plasma-assisted molecular beam epitaxy (PA-MBE), and full-M-sided hexagonal structure micro-LEDs were prepared. We fabricated the micro-LED array with the full-M-sided hexagonal structure and repaired etching damage on the sidewall by chemically treating with a tetramethylammonium hydroxide (TMAH) solution. Most of the surface defects caused by etching were eliminated, and the etching damage can be further reduced by using QDs as an active region. Thus, the efficiency of the micro-LED at a low injection current density is improved, and the size effect is eventually overcome. Compared with the 20 mu m micro-LED array, the peak EQE of the 10 mu m micro-LED array was improved by 79%, reaching 0.83% at 11 A/cm(2). We demonstrate that constructing full-M-sided structures can overcome the size effect in InGaN QD-based micro-LEDs. Notably, the cyan-green micro-LEDs fabricated by this method exhibited low efficiency drop. In addition, the QD-based micro-LED exhibits excellent wavelength stability with increasing injection current density. This work provides a new way to fabricate high-efficiency micro-LEDs.

Demonstration of near‐size independent EQE for 368 nm UV micro‐LEDs

240 nm AlGaN-based deep ultraviolet micro-LEDs: size effect versus edge effect

Analysis of the efficiency improvement of 273 nm AlGaN UV-C micro-LEDs

Significant reduction in sidewall damage related external quantum efficiency (EQE) drop in red InGaN microLEDs (∼625 nm at 1 A cm−2) with device sizes down to 3 μm

Enhancing external quantum efficiency of deep ultraviolet micro-LEDs through geometry design and multi-physics field coupling analysis

In-depth Investigation of Deep Ultraviolet MicroLED Geometry for Enhanced Performance

Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

High Efficiency Single Ag Nanowire/p-Gan Substrate Schottky Junction-Based Ultraviolet Light Emitting Diodes

Numerical simulation of deep ultraviolet LED, micro-LED, and nano-LED with different emission wavelengths based on FDTD

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (μLEDs) with Narrow Spectral Line Width

275 nm Deep Ultraviolet AlGaN-Based Micro-LED Arrays for Ultraviolet Communication

AlGaN-based Deep Ultraviolet Micro-Led Emitting at 275 Nm.

Elimination of Size Effects in InGaN Quantum Dot Cyan-Green Micro-LEDs by Constructing a Full-m-Plane Hexagonal Structure

Efficiency improvement analysis of nano-patterned sapphire substrates and semi-transparent superlattice contact layer in UVC light-emitting diodes

Recent Advances on GaN-Based Micro-LEDs

Quantitative Evaluation of Carrier Dynamics in Blue Micro-LEDs: the Impact of Size and Current Density on Recombination and Injection Efficiency

Size-Dependent UV-C Communication Performance of AlGaN Micro-LEDs and LEDs

Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs

Monolithic Dual-Wavelength AlGaN-Based UV-LEDs with Controllable Spectral Profile

Size effects of AlGaInP red vertical micro-LEDs on silicon substrate