Effect of low-temperature annealing on electric resistivity and mechanical anisotropy of Al-Si binary alloy fabricated by laser-powder bed fusion

Yoichiro Konishi,Yuki Hamasaki,Toshihiko Sasaki,Hiroki Adachi,Kazuhiro Ishikawa,Dasom Kim,Naoki Takata,Yoji Miyajima
DOI: https://doi.org/10.1016/j.jallcom.2024.173737
IF: 6.2
2024-02-10
Journal of Alloys and Compounds
Abstract:Al-12mass%Si binary alloy was fabricated by laser-powder bed fusion (L-PBF). The effect of low temperature annealing (LTA) less than 573 K on electrical and mechanical properties, microstructure, and residual stress of L-PBF Al-12mass%Si was investigated. Due to LTA, electrical resistivity at 77 K and 293 K changed from 34 nΩm down to 10 nΩm and from 68 nΩm down to 45 nΩm, respectively. The lattice constant of α-Al phase increased around 0.0005 nm by LTA according to X-ray diffraction. The change was associated with the decrease in the concentration of solid-solution Si of around 3.4 mass% by electrical resistivity measurement and 3 mass% by X-ray diffraction, when the annealing temperature was 473 K. Whereas, Vickers hardness increases around 145 HV compared with that for the as-built value of 141 HV, and then, decreases down to 126 HV and saturates. TEM/EDS observations confirmed the precipitation of fine Si within the α-Al phase. The decrease in annealing temperature increases the time to reach the Vickers hardness peak. 0.2% proof stress obtained by compression tests shows anisotropy, which can be attributed to the anisotropy on residual stress, which still exists after LTA.
materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
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