Electronic and optical properties of silicene on GaAs(111) with hydrogen intercalation: a first-principles study

Ting Yu,He Zhang,Dan Li,Yanwu Lu

DOI: https://doi.org/10.1039/d1ra01959g

IF: 4.036

2021-01-01

RSC Advances

Abstract:In this paper, we investigated the electronic and optical properties of silicene on GaAs(111) substrates (silicene/HGaAs) on the basis of first-principles density functional theory.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Silicene-supported TiO2 Nanostructures: a Theoretical Study of Electronic and Optical Properties

Yesukhei Jagvaral,Qing Guo,Haiying He,Ravindra Pandey

DOI: https://doi.org/10.1039/c9cp00894b

2019-01-01

Abstract:Titania (TiO2) is a material of choice for energy-related applications, such as photovoltaics and photocatalysis. The presence of a large band gap and fast electron-hole recombination occurring in the lattice significantly reduce the material's quantum efficiency, and therefore limit industrial-scale applications. In this article, we investigate whether silicene can be a viable substrate for TiO2 nanostructures in photocatalytic applications. Calculations based on density functional theory find a strong electronic coupling between silicene and oxide nanostructures. Electron transfer from silicene to the nanostructures results in the production of active photoreduction sites involving Ti3+ ions in the system. The hybrid TiO2/silicene system also exhibits modification of optical characteristics with the capability of absorbing light in the visible range and spatially separating charges, thus displaying superior photocatalytic activity relative to pristine TiO2 for energy-related applications.
Electronic Structure Of Silicene On Ag(111): Strong Hybridization Effects

seymur cahangirov,martha audiffred,peizhe tang,amilcare iacomino,wenhui duan,gabriel merino,angel rubio

DOI: https://doi.org/10.1103/PhysRevB.88.035432

IF: 3.7

2013-01-01

Physical Review B

Abstract:The electronic structure of the recently synthesized (3 x 3) reconstructed silicene on (4 x 4) Ag(111) is investigated by first-principles calculations. New states emerge due to the strong hybridization between silicene and Ag. Analyzing the nature and composition of these hybridized states, we show that (i) it is possible to clearly distinguish them from states coming from the Dirac cone of free-standing silicene or from the sp bands of bulk Ag and (ii) assign their contribution to the description of the linearly dispersing band observed in photoemission. Furthermore, we show that silicene atoms contribute to the Fermi level, which leads to similar scanning tunneling microscopy patterns as observed below or above the Fermi level. Our findings are crucial for the proper interpretation of experimental observations.
Electronic Structure and Quasiparticle Band Gap of Silicene Structures

Shouting Huang,Wei Kang,Li Yang

DOI: https://doi.org/10.1063/1.4801309

2012-12-11

Abstract:We report first-principles results on the electronic structure of various silicene structures. For planar and simply buckled silicenes, we confirm their zero-gap nature and show a significant renormalization of their Fermi velocity by including many-electron effects. However, the other two recently proposed silicene structures exhibit a finite band gap, indicating that they are gapped semiconductors instead of previously expected Dirac-fermion semimetals. Moreover, our calculated quasiparticle gap quantitatively explains the recent angle-resolved photoemission spectroscopy measurements. In particular, the band gap of the latter two structures can be tuned in a wide range by applying strain, giving hope to bipolar-devices applications.

Mesoscale and Nanoscale Physics
Electronic Structure and Quasiparticle Bandgap of Silicene Structures

Shouting Huang,Wei Kang,Li Yang

DOI: https://doi.org/10.1063/1.4801309

IF: 4

2013-01-01

Applied Physics Letters

Abstract:We report first-principles results on the electronic structure of various silicene structures. For planar and simply buckled silicenes, we confirm their zero-gap nature and show a significant renormalization of their Fermi velocity by including many-electron effects. However, the other two recently proposed silicene structures exhibit a finite band gap, indicating that they are gapped semiconductors instead of previously expected Dirac-fermion semimetals. Moreover, our calculated quasiparticle gap quantitatively explains the recent angle-resolved photoemission spectroscopy measurements. In particular, the band gap of the latter two structures can be tuned in a wide range by applying strain, giving hope to bipolar-devices applications.
Tunable Electronic and Optical Properties of Monolayer Silicane under Tensile Strain: a Many-Body Study.

Huabing Shu,Shudong Wang,Yunhai Li,Joanne Yip,Jinlan Wang

DOI: https://doi.org/10.1063/1.4892110

IF: 4.304

2014-01-01

The Journal of Chemical Physics

Abstract:The electronic structure and optical response of silicane to strain are investigated by employing first-principles calculations based on many-body perturbation theory. The bandgap can be efficiently engineered in a broad range and an indirect to direct bandgap transition is observed under a strain of 2.74%; the semiconducting silicane can even be turned into a metal under a very large strain. The transitions derive from the persistent downward shift of the lowest conduction band at the Γ-point upon an increasing strain. The quasi-particle bandgaps of silicane are sizable due to the weak dielectric screening and the low dimension; they are rapidly reduced as strain increases while the exciton bound energy is not that sensitive. Moreover, the optical absorption edge of the strained silicane significantly shifts towards a low photon energy region and falls into the visible light range, which might serve as a promising candidate for optoelectronic devices.
Band structure of hydrogenated silicene on Ag(111): Evidence for silicane

W. Wang,W. Olovsson,R. I. G. Uhrberg

DOI: https://doi.org/10.48550/arXiv.1511.06151

2015-11-19

Materials Science

Abstract:In the case of graphene, hydrogenation removes the conductivity due to the bands forming the Dirac cone by opening up a band gap. This type of chemical functionalization is of utmost importance for electronic applications. As predicted by theoretical studies, a similar change of the band structure is expected for silicene, the closest analogue to graphene. We here report a study of the atomic and electronic structures of hydrogenated silicene, so called silicane. The ($\small 2\sqrt{3} \times 2\sqrt{3}$) phase of silicene on Ag(111) was used in this study since it can be formed homogeneously across the entire surface of the Ag substrate. Low energy electron diffraction and scanning tunneling microscopy data clearly show that hydrogenation changes the structure of silicene on Ag(111) resulting in a (1 $\times$ 1) periodicity with respect to the silicene lattice. The hydrogenated silicene also exhibits a quasi-regular ($\small 2\sqrt{3} \times 2\sqrt{3}$)-like arrangement of vacancies. Angle resolved photoelectron spectroscopy revealed two dispersive bands which can be unambiguously assigned to silicane. The common top of these bands is located at $\small \backsim$ 0.9 eV below the Fermi level. We find that the experimental bands are closely reproduced by the theoretical band structure of free standing silicane with H adsorbed on the upper hexagonal sub-lattice of silicene.
Quantum confinement and surface chemistry of 0.8–1.6 nm hydrosilylated silicon nanocrystals

pi xiaodong,wang rong,yang deren

DOI: https://doi.org/10.1088/1674-1056/23/7/076102

2014-01-01

Chinese Physics B

Abstract:In the framework of density functional theory (DFT), we have studied the electronic properties of alkene/alkyne-hydrosilylated silicon nanocrystals (Si NCs) in the size range from 0.8 nm to 1.6 nm. Among the alkenes with all kinds of functional groups considered in this work, only those containing -NH2 and -C4H3S lead to significant hydrosilylation-induced changes in the gap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of an Si NC at the ground state. The quantum confinement effect is dominant for all of the alkene-hydrosilylated Si NCs at the ground state. At the excited state, the prevailing effect of surface chemistry only occurs at the smallest (0.8 nm) Si NCs hydrosilylated with alkenes containing -NH2 and -C4H3S. Although the alkyne hydrosilylation gives rise to a more significant surface chemistry effect than alkene hydrosilylation, the quantum confinement effect remains dominant for alkyne-hydrosilylated Si NCs at the ground state. However, at the excited state, the effect of surface chemistry induced by the hydrosilylation with conjugated alkynes is strong enough to prevail over that of quantum confinement.
Formation, Structures and Electronic Properties of Silicene Oxides on Ag(111)

Muhammad Ali,Zhenyi Ni,Stefaan Cottenier,Yong Liu,Xiaodong Pi,Deren Yang

DOI: https://doi.org/10.1016/j.jmst.2016.08.020

2016-01-01

Journal of Material Science and Technology

Abstract:The formation, structural and electronic properties of silicene oxides（SOs） that result from the oxidation of silicene on Ag（111） surface have been investigated in the framework of density functional theory（DFT）.It is found that the honeycomb lattice of silicene on the Ag（111） surface changes after the oxidation. SOs are strongly hybridized with the Ag（111） surface so that they possess metallic band structures. Charge accumulation between SOs and the Ag（111） surface indicates strong chemical bonding, which dramatically affects the electronic properties of SOs. When SOs are peeled off the Ag（111） surface, however, they may become semiconductors.
Density Functional Theory Study on Organically Surface-Modified Silicene

Rong Wang,Xiaodong Pi,Zhenyi Ni,Yong Liu,Deren Yang

DOI: https://doi.org/10.1039/c5ra05751e

IF: 4.036

2015-01-01

RSC Advances

Abstract:The geometrical structures, band structures and optical absorption of organically surface-modified silicene have been investigated by density functional theory.
Silicene on Substrates: A Theoretical Perspective

Hongxia Zhong,Ruge Quhe,Yangyang Wang,Junjie Shi,Jing Lü

DOI: https://doi.org/10.1088/1674-1056/24/8/087308

2015-01-01

Abstract:Silicene, as the silicon analog of graphene, is successfully fabricated by epitaxially growing it on various substrates. Like free-standing graphene, free-standing silicene possesses a honeycomb structure and Dirac-cone-shaped energy band, resulting in many fascinating properties such as high carrier mobility, quantum spin Hall effect, quantum anomalous Hall effect, and quantum valley Hall effect. The existence of the honeycomb crystal structure and the Dirac cone of silicene is crucial for observation of its intrinsic properties. In this review, we systematically discuss the substrate effects on the atomic structure and electronic properties of silicene from a theoretical point of view, especially with emphasis on the changes of the Dirac cone.
First-Principles Study on the Surface Chemistry of 1.4 Nm Silicon Nanocrystals: Case of Hydrosilylation

Rong Wang,Xiaodong Pi,Deren Yang

DOI: https://doi.org/10.1021/jp307785v

2012-01-01

Abstract:As a leading surface-modification approach, hydrosilylation is critical to the practical use of silicon nanocrystals (Si NCs). However, the effect of hydrosilylation-induced surface chemistry on the electronic and optical properties of Si NCs is rather limitedly understood. By means of first-principles calculation at 0 K we show thermodynamically favored surface bonding for hydrosilylation of 1.4 nm Si NCs and the relative reactivity of alkenes and alkynes. The optical properties of hydrosilylated Si NCs are elucidated on the basis of their energy-level schemes and radiative recombination rates. The chain length (up to C12) of ligands hardly affects the absorption and emission of Si NCs. The increase of the surface coverage (up to 29%) of ligands causes the absorption onset to slightly redshift, hardly rendering changes to the light emission from Si NCs. As an added advantage, hydrosilylation may lead to enhanced light emission from Si NCs. Radiative recombination is very sensitive to surface chemistry for Si NCs. Only the coexistence of C=C and functional groups at the NC surface significantly modifies the electronic structures and optical behavior of Si NCs.
Tailoring topological states in silicene using different halogen-passivated Si(111) substrates

Vahid Derakhshan,Ali G. Moghaddam,Davide Ceresoli

DOI: https://doi.org/10.1103/PhysRevB.97.125301

2018-02-15

Abstract:We investigate the band structure and topological phases of silicene embedded on halogenated Si(111) surface, by virtue of density functional theory and tight-binding <a class="link-external link-http" href="http://calculations.Our" rel="external noopener nofollow">this http URL</a> results show that the Dirac character of low energy excitations in silicene is almost preserved in the presence of silicon substrate passivated by various halogens. Nevertheless, the combined effects of charge transfer into the substrate, stretching of bonds between silicon atoms, and symmetry breaking which originates from van der Waals interaction, result in a gap $E_{g1}$ in the spectrum of the embedded silicene. We further take the spin-orbit interaction into account and obtain its strength and the resulting enhancement in the gap $E_{g2}=2\lambda$. Both $E_{g1}$ and $E_{g2}$ which contribute to the total gap, vary significantly when different halogen atoms are used for the passivation of the Si surface and for the case of iodine, they have very large values of $70$ and $23$ meV, respectively. To examine the topological properties, we calculate the projected band structure of silicene from which the tight binding parameters of the low-energy effective Hamiltonian are obtained by fitting. Our results based on Berry curvature and $\mathbb{Z}_2$ invariant reveals that silicene on halogenated Si substrates has a topological insulating state which can survive even at room temperature for the substrate with iodine and bromine at the surface. Similar to the free standing silicene, by applying a perpendicular electric field and at a certain critical value which again depends on the type of halogens, the gap closes and silicene undergoes a transition to a trivial insulating state. As a key finding, we see that the presence of halogenated substrate except for the case of fluorine enhances the robustness of the topological phases against the vertical electric field and most probably other external perturbations.

Mesoscale and Nanoscale Physics,Materials Science
Topological Dirac States Beyond Π Orbitals for Silicene on SiC(0001) Surface

Ping Li,Xiao Li,Wei Zhao,Hua Chen,Ming-Xing Chen,Zhi-Xin Guo,Ji Feng,Xin-Gao Gong,Allan H. MacDonald

DOI: https://doi.org/10.1021/acs.nanolett.7b02855

IF: 10.8

2017-01-01

Nano Letters

Abstract:The discovery of intriguing properties related to the Dirac states in graphene has spurred huge interest in exploring its two-dimensional group-IV counterparts, such as silicene, germanene, and stanene. However, these materials have to be obtained via synthesizing on substrates with strong interfacial interactions, which usually destroy their intrinsic π(p_z)-orbital Dirac states. Here we report a theoretical study on the existence of Dirac states arising from the p_x,y orbitals instead of p_z orbitals in silicene on 4H-SiC(0001), which survive in spite of the strong interfacial interactions. We also show that the exchange field together with the spin-orbital coupling give rise to a detectable band gap of 1.3 meV. Berry curvature calculations demonstrate the nontrivial topological nature of such Dirac states with a Chern number C = 2, presenting the potential of realizing quantum anomalous Hall effect for silicene on SiC(0001). Finally, we construct a minimal effective model to capture the low-energy physics of this system. This finding is expected to be also applicable to germanene and stanene, and imply great application potentials in nanoelectronics.
Strong Band Hybridization Between Silicene and Ag(1 1 1) Substrate

Yakun Yuan,Ruge Quhe,Jiaxin Zheng,Yangyang Wang,Zeyuan Ni,Junjie Shi,Jing Lu

DOI: https://doi.org/10.1016/j.physe.2013.11.016

IF: 3.369

2013-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:By using first-principles calculations, we systematically investigated several observed phases of silicene on Ag(111) substrates and their electronic structures. We find that the original Dirac cone of silicene is about 1.5-1.7 eV deeply below the Fermi level and severely destroyed by the band hybridization between silicene and Ag in all the examined phases. Thus, silicene synthesized on Ag(111) substrates could not preserve its excellent electronic property and new method is needed to develop in synthesizing silicene with its Dirac cone surviving.
Exploring semiconductor substrates for Silicene epitaxy

Amrita Bhattacharya,Saswata Bhattacharya,G. P. Das

DOI: https://doi.org/10.1063/1.4821993

2013-08-23

Abstract:We have carried out first-principles based DFT calculation on electronic properties of silicene monolayer on various (111) semi-conducting surfaces. We find that the relative stability and other properties of the silicene overlayer depends sensitively on whether the interacting top layer of the substrate is metal or non-metal terminated. The nature of silicene-monolayer on the metal termi- nated surface can be metallic or even magnetic, depending upon the choice of the substrate. The silicene overlayer undergoes n-type doping on metal terminated surface while it undergoes p-type doping on non metal terminated surfaces of the semiconductor substrates.

Materials Science
Quasi-Particle Band Structure and Enhanced Excitonic Effect of Silicane by Using GW and BSE Calculation

Ruixiang FEI,Guangfu LUO,Zhengxiang GAO,Jing L(U)

DOI: https://doi.org/10.13209/j.0479-8023.2013.054

2013-01-01

Abstract:The authors present first-principles calculations of the quasiparticle correction and the optical absorption of chairlike silicane fully hydrogenated silicene by using GW method and Bethe-Salpeter equation(BSE).Electron-electron interaction significantly affects the band structure of chairlike silicane.The indirect band gap of chairlike silicane increases from 2.08 to 3.53 eV and the direct quasiparticle band gap increases from 2.44 to 3.85 eV upon inclusion of the quasiparticle correction.Electron-hole interaction significantly affects the optical absorption of chairlike silicane.The binding energy of the binding exciton is about 0.40 eV,much larger than the value of 15 meV in the bulk Si.The enhanced excitonic effect is expected to be of importance in optoelectronic applications of silicene-based nanostructures.
Integer quantum Hall effect and topological phase transitions in silicene

Y. L. Liu,G. X. Luo,N. Xu,H. Y. Tian,C. D. Ren,Y.L. Liu,G.X. Luo,H.Y. Tian,C.D. Ren

DOI: https://doi.org/10.48550/arXiv.1712.05348

2017-12-14

Strongly Correlated Electrons

Abstract:We numerically investigate the effects of disorder on the quantum Hall effect (QHE) and the quantum phase transitions in silicene based on a lattice model. It is shown that for a clean sample, silicene exhibits an unconventional QHE near the band center, with plateaus developing at $\nu=0,\pm2,\pm6,\ldots,$ and a conventional QHE near the band edges. In the presence of disorder, the Hall plateaus can be destroyed through the float-up of extended levels toward the band center, in which higher plateaus disappear first. However, the center $\nu=0$ Hall plateau is more sensitive to disorder and disappears at a relatively weak disorder strength. Moreover, the combination of an electric field and the intrinsic spin-orbit interaction (SOI) can lead to quantum phase transitions from a topological insulator to a band insulator at the charge neutrality point (CNP), accompanied by additional quantum Hall conductivity plateaus.
First-principles prediction of a new Dirac-fermion material: silicon germanide monolayer

Hongcai Zhou,Mingwen Zhao,Xiaoming Zhang,Wenzheng Dong,Xiaopeng Wang,Hongxia Bu,Aizhu Wang

DOI: https://doi.org/10.1088/0953-8984/25/39/395501

2013-08-14

Abstract:From first-principles calculations, we proposed a silicon germanide (SiGe) analog of silicene. This SiGe monolayer is stable and free from imaginary frequency in the phonon spectrum. The electronic band structure near the Fermi level can be characterized by Dirac cones with the Fermi velocity comparable to that of silicene. The Ge and Si atoms in SiGe monolayer exhibit different tendencies in binding with hydrogen atoms, making sublattice-selective hydrogenation and consequently electron spin-polarization possible.

physics, condensed matter
Hybrid functional studies on the optical and electronic properties of graphane and silicane

j q hu,j h zhang,s q wu,z z zhu

DOI: https://doi.org/10.1016/j.ssc.2015.02.021

IF: 1.934

2015-01-01

Solid State Communications

Abstract:The optical and electronic properties of graphane and silicane are studied by a first-principles method based on density functional theory, employing both the hybrid (HSE06) and the Perdew–Burke–Ernzerhof (PBE) functionals. Our HSE06 results show that graphane has a direct band gap of 4.49eV, while silicane has an indirect band gap of 2.94eV. In graphane, the imaginary part of dielectric function ε2(ω) has two peaks at 7.70 and 15.03eV for E||z, while for E||x, there are three peaks lying at 11.56, 13.25 and 14.33eV. In silicane, ε2(ω) has a main peak at 8.68eV for E||z, while there are two peaks at 4.56 and 8.55eV for E||x. In graphane, the peaks in ε2(ω) are mainly due to the transitions from C 2p and H 1s states to C 2s and 2p ones; while in silicane, the peaks are primarily originated from the transitions from Si 3p and H 1s states to Si 3s and 3p as well as H 1s states.
Ordered and Reversible Hydrogenation of Silicene

Jinglan Qiu,Huixia Fu,Yang Xu,A. I. Oreshkin,Tingna Shao,Hui Li,Sheng Meng,Lan Chen,Kehui Wu

DOI: https://doi.org/10.1103/physrevlett.114.126101

2015-01-01

Abstract:The hydrogenation of monatomic silicene sheet on Ag(111) was studied by scanning tunneling microscopy and density functional theory calculations. It was observed that hydrogenation of silicene at room temperature results in a perfectly ordered gamma-(3 x 3) superstructure. A theoretical model, which involves seven H atoms and rearranged buckling of Si atoms, was proposed and agrees with experiments very well. Moreover, by annealing to a moderate temperature, about 450 K, a dehydrogenation process occurs and the clean silicene surface can be fully recovered. Such uniformly ordered and reversible hydrogenation may be useful for tuning the properties of silicene as well as for controllable hydrogen storage.

Electronic and optical properties of silicene on GaAs(111) with hydrogen intercalation: a first-principles study

Silicene-supported TiO2 Nanostructures: a Theoretical Study of Electronic and Optical Properties

Electronic Structure Of Silicene On Ag(111): Strong Hybridization Effects

Electronic Structure and Quasiparticle Band Gap of Silicene Structures

Electronic Structure and Quasiparticle Bandgap of Silicene Structures

Tunable Electronic and Optical Properties of Monolayer Silicane under Tensile Strain: a Many-Body Study.

Band structure of hydrogenated silicene on Ag(111): Evidence for silicane

Quantum confinement and surface chemistry of 0.8–1.6 nm hydrosilylated silicon nanocrystals

Formation, Structures and Electronic Properties of Silicene Oxides on Ag(111)

Density Functional Theory Study on Organically Surface-Modified Silicene

Silicene on Substrates: A Theoretical Perspective

First-Principles Study on the Surface Chemistry of 1.4 Nm Silicon Nanocrystals: Case of Hydrosilylation

Tailoring topological states in silicene using different halogen-passivated Si(111) substrates

Topological Dirac States Beyond Π Orbitals for Silicene on SiC(0001) Surface

Strong Band Hybridization Between Silicene and Ag(1 1 1) Substrate

Exploring semiconductor substrates for Silicene epitaxy

Quasi-Particle Band Structure and Enhanced Excitonic Effect of Silicane by Using GW and BSE Calculation

Integer quantum Hall effect and topological phase transitions in silicene

First-principles prediction of a new Dirac-fermion material: silicon germanide monolayer

Hybrid functional studies on the optical and electronic properties of graphane and silicane

Ordered and Reversible Hydrogenation of Silicene