Abstract: Photodetectors with high responsivity, broadband response to mid-infrared range are in a great demand in optical detection area. Topological charge-density-wave (CDW) semimetal materials with high carrier mobility and near zero bandgap provide an emerging route to meet the demand. Here we firstly investigated the photo/magnetic field reshaped CDW melting phenomenon of quasi one dimensional (1D) topological CDW semimetal (TaSe4)2I. Two orders of magnitude of hysteretic resistance variation is achieved due to CDW melting, which can be manipulated by electric, magnetic field or photoexcitation. In situ polarized Raman scattering spectroscopy reveals the concurrent occurrence of both electronic and structural phase transition. Surprisingly, the phase transition could be driven by applying a minimum voltage interval of 10 {\mu}V or a magnetic field interval of 83 Oe at a moderate temperature 120 K. The sharpness of the transition is manifested by single point current jumping (SPCJ). Photodetectors based on this transition has much superior performance than that of quasi two dimensional (2D) TaS2 reported in literature, which is also elaborated by our density functional theory (DFT) calculation. Photoresponsivity at 120 K from visible (405 A/W @ 532 nm) to mid-infrared (31.67 A/W @ 4.73 um) and detectivity (7.2E9 Jones @ 532 nm, 5.6E8 Jones @ 4.73 um) are both one order of magnitude higher than that of TaS2 while the photoresponsivity and detectivity also outperforms commercialized HgCdTe material. Our work not only reveals the important role of dimensionality in CDW phase transition, but also paves a new way for implementing ultrasensitive, broadband photodetector as well as transconductance transistor, memory devices by exploiting quasi-1D topological CDW materials

Synthesis of Semiconducting 2H-Phase WTe 2 Nanosheets with Large Positive Magnetoresistance

Preparation of Single-Layer MoS(2x)Se2(1-x) and Mo(x)W(1-x)S2 Nanosheets with High-Concentration Metallic 1T Phase.

Tunable Positive to Negative Magnetoresistance in Atomically Thin WTe2

Anisotropic Magnetotransport and Exotic Longitudinal Linear Magnetoresistance Inwte2crystals

Dramatically Decreased Magnetoresistance in Non-Stoichiometric WTe2 Crystals

High-metallic-phase-concentration Mo1–xWxS2 nanosheets with expanded interlayers as efficient electrocatalysts

Anisotropic Magnetotransport and Exotic Longitudinal Linear Magnetoresistance in WTe2 Crystals

Synthesis of WTe2 Nanowires with Increased Electron Scattering

Large Unsaturated Positive and Negative Magnetoresistance in Weyl Semimetal TaP

Giant Positive Magnetoresistance in Co@CoO Nanoparticle Arrays

Ultrasensitive resistance switching and giant photoresponsivity from visible to mid-infrared of quasi one-dimensional Weyl semimetal (TaSe4)2I

Weyl Node-Participated Magnetoresistance and Nonreciprocal Transport in Two-Dimensional Tellurene Nanostructures

Gate-tunable Negative Longitudinal Magnetoresistance in the Predicted Type-Ii Weyl Semimetal WTe2

Extremely Large Magnetoresistance in the Topologically Trivial Semimetal Α−wp2

Enhanced Electrocatalytic Hydrogen Evolution from Large-Scale, Facile-Prepared, Highly Crystalline WTe 2 Nanoribbons with Weyl Semimetallic Phase.

Robust Linear Magnetoresistance in WTe2

Extremely Large Magnetoresistance in the Type-Ii Weyl Semimetalmote2

Signature of Strong Spin-Orbital Coupling in the Large Non-Saturating Magnetoresistance Material WTe2

Formation of a Two-Dimensional Electronic System in Laterally Assembled WTe Nanowires

Significantly Enhanced Magnetoresistance In Monolayer Wte(2)Via Heterojunction Engineering: A First-Principles Study

Butterfly-Like Anisotropic Magnetoresistance and Angle-Dependent Berry Phase in a Type-II Weyl Semimetal WP<sub>2</sub>