Dramatically Decreased Magnetoresistance in Non-Stoichiometric WTe2 Crystals

Yang-Yang Lv,Bin-Bin Zhang,Xiao Li,Bin Pang,Fan Zhang,Da-Jun Lin,Jian Zhou,Shu-Hua Yao,Y. B. Chen,Shan-Tao Zhang,Minghui Lu,Zhongkai Liu,Yulin Chen,Yan-Feng Chen
DOI: https://doi.org/10.1038/srep26903
IF: 4.6
2016-01-01
Scientific Reports
Abstract:Recently, the layered semimetal WTe 2 has attracted renewed interest owing to the observation of a non-saturating and giant positive magnetoresistance (~10 5 %), which can be useful for magnetic memory and spintronic devices. However, the underlying mechanisms of the giant magnetoresistance are still under hot debate. Herein, we grew the stoichiometric and non-stoichiometric WTe 2 crystals to test the robustness of giant magnetoresistance. The stoichiometric WTe 2 crystals have magnetoresistance as large as 3100% at 2 K and 9-Tesla magnetic field. However, only 71% and 13% magnetoresistance in the most non-stoichiometry (WTe 1.80 ) and the highest Mo isovalent substitution samples (W 0.7 Mo 0.3 Te 2 ) are observed, respectively. Analysis of the magnetic-field dependent magnetoresistance of non-stoichiometric WTe 2 crystals substantiates that both the large electron-hole concentration asymmetry and decreased carrier mobility, induced by non-stoichiometry, synergistically lead to the decreased magnetoresistance. This work sheds more light on the origin of giant magnetoresistance observed in WTe 2 .
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