Gate-tunable Negative Longitudinal Magnetoresistance in the Predicted Type-Ii Weyl Semimetal WTe2
Yaojia Wang,Erfu Liu,Huimei Liu,Yiming Pan,Longqiang Zhang,Junwen Zeng,Yajun Fu,Miao Wang,Kang Xu,Zhong Huang,Zhenlin Wang,Hai-Zhou Lu,Dingyu Xing,Baigeng Wang,Xiangang Wan,Feng Miao
DOI: https://doi.org/10.1038/ncomms13142
2017-01-01
Abstract:The progress in exploiting new electronic materials has been a major driving force in solid-state physics. As a new state of matter, a Weyl semimetal (WSM), in particular a type-II WSM, hosts Weyl fermions as emergent quasiparticles and may harbour novel electrical transport properties. Nevertheless, such a type-II WSM material has not been experimentally observed. In this work, by performing systematic magneto-transport studies on thin films of a predicted material candidate WTe2, we observe notable negative longitudinal magnetoresistance, which can be attributed to the chiral anomaly in WSM. This phenomenon also exhibits strong planar orientation dependence with the absence along the tungsten chains, consistent with the distinctive feature of a type-II WSM. By applying a gate voltage, we demonstrate that the Fermi energy can be in-situ tuned through the Weyl points via the electric field effect. Our results may open opportunities for implementing new electronic applications, such as field-effect chiral devices.