Demonstration of low power and high–speed graphene/Silicon heterojunction near–infrared photodetector

Min Gyu Kwon,Cihyun Kim,Seung-Mo Kim,Tae Jin Yoo,Lee Yongsu,Hyeon Jun Hwang,Sanghan Lee,Byoung Hun Lee

DOI: https://doi.org/10.1039/d4na00286e

IF: 5.598

2024-05-22

Nanoscale Advances

Abstract:The structure and process of the graphene/Si heterojunction near–infrared photodetector were optimized to enhance the operating speed limit. The introduction of a well–designed structure improved the rise time from 12.6 μs to 115 ns, albeit at the expense of the responsivity, which decreased from 1.25 A/W to 0.56 A/W. Similarly, the falling time was improved from 38 μs to 288 ns with a sacrifice in responsivity from 1.25 A/W to 0.29 A/W, achieved through the introduction of Ge–induced defect–recombination centers within the well. Through a judicious well design and the introduction of recombination defect centers, the minimum pulse width could be improved from 50.6 μs to 435 ns, facilitating 2 MHz operation. This represents more than 100 times increase compared to previously reported graphene and graphene/Si hybrid photodetectors.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry