2.7 μm mid-infrared Er-doped thin-film LiNbO 3 -on-insulator photonic wire laser

Feng Chen,Qing Xu,Zhao-Xi Chen,De-Long Zhang
DOI: https://doi.org/10.1016/j.optmat.2023.113844
IF: 3.754
2023-05-05
Optical Materials
Abstract:The 2.7 μm continuous-wave laser was demonstrated theoretically on the basis of a 1480-nm-pumped Er-doped thin-film LiNbO 3 -on-insulator photonic wire (Er:LNOI PW) and a three-level rate equation model of Er 3+ . Under 1480 nm pumping, the excited state absorption ( 4 I 13/2 → 4 I 9/2 ) and cooperative upconversion process ( 4 I 13/2 → 4 I 15/2 : 4 I 13/2 → 4 I 9 /2 ) populate the 4 I 11/2 level meanwhile bypass significantly the 4 I 13/2 level, enabling a population inversion between these two levels. The cavity length and output coupler's reflectivity at laser wavelength were optimized for maximizing laser output. Under the optimum configuration, dependences of laser power on both pump power and Er 3+ concentration were investigated. Simulation results show that lower threshold pump power, higher laser output and slope efficiency are obtained for a higher Er 3+ concentration. The laser output reveals a linear relationship to the Er 3+ concentration and the relationship is strong at higher pump level. Simulation results show that the threshold pump power, laser output and slope efficiency are on orders of several tens of mW, sub-mW and 3.1%, respectively, for an Er 3+ concentration of 1.5 mol%. In addition, there is no need to account for photorefractive effect on the laser performance as it is far smaller than the refractive index contrast of the LNOI PW, ∼0.7. Present work opens up the possibility of implementing an on-chip 2.7 μm mid-infrared laser based on an Er:LNOI.
materials science, multidisciplinary,optics
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